Expanding the measuring range via S-parameters in a EHV voltage transformer modelling for reliable GIS VFT simulations

2022 ◽  
Vol 203 ◽  
pp. 107672
Author(s):  
Gustavo H.C. Oliveira ◽  
Lucas P.R.K. Ihlenfeld ◽  
Lucas F.M. Rodrigues ◽  
Angélica C.O. Rocha ◽  
Diogo J.D.E. Santo
Keyword(s):  
Voltage Transformer ◽  
Measuring Range ◽  
S Parameters

Ferroresonance Characteristics on Capacitive Voltage Transformer Under Lightning Impulse Voltage

2016 ◽  
Vol 9 (4) ◽  
pp. 306 ◽  
Author(s):  
I. Gusti Ngurah Satriyadi ◽  
I. Made Yulistya Negara ◽  
Daniar Fahmi ◽  
N. Wijayanto ◽  
Mochammad Wahyudi ◽  
...  
Keyword(s):  
Voltage Transformer ◽  
Capacitive Voltage ◽  
Impulse Voltage ◽  
Lightning Impulse

Marginal RF Gain Investigation and Root Cause Determination

2013 ◽  
Author(s):  
Keith Harber ◽  
Steve Brockett
Keyword(s):  
Radio Frequency ◽  
Failure Analysis ◽  
Power Amplifier ◽  
Physical Analysis ◽  
Root Cause ◽  
S Parameter ◽  
Mode Of Operation ◽  
S Parameters

Abstract This paper outlines the failure analysis of a Radio Frequency only (RF-only) failure on a complex Multimode Multiband Power Amplifier (MMPA) module, where slightly lower gain was observed in one mode of operation. 2 port S-parameter information was collected and utilized to help localize the circuitry causing the issue. A slight DC electrical difference was observed, and simulation was utilized to confirm that difference was causing the observed S-parameters. Physical analysis uncovered a very visible cause for the RF-only failure.

scholarly journals Optical Voltage Transformer Based on FBG-PZT for Power Quality Measurement

Sensors ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 2699
Author(s):  
Marceli N. Gonçalves ◽  
Marcelo M. Werneck
Keyword(s):  
Power System ◽  
Power Quality ◽  
Distribution System ◽  
Electrical Power ◽  
Quality Measurement ◽  
Pockels Effect ◽  
Electrical Power System ◽  
Voltage Transformer ◽  
Technical Literature ◽  
Distribution Lines

Optical Current Transformers (OCTs) and Optical Voltage Transformers (OVTs) are an alternative to the conventional transformers for protection and metering purposes with a much smaller footprint and weight. Their advantages were widely discussed in scientific and technical literature and commercial applications based on the well-known Faraday and Pockels effect. However, the literature is still scarce in studies evaluating the use of optical transformers for power quality purposes, an important issue of power system designed to analyze the various phenomena that cause power quality disturbances. In this paper, we constructed a temperature-independent prototype of an optical voltage transformer based on fiber Bragg grating (FBG) and piezoelectric ceramics (PZT), adequate to be used in field surveys at 13.8 kV distribution lines. The OVT was tested under several disturbances defined in IEEE standards that can occur in the electrical power system, especially short-duration voltage variations such as SAG, SWELL, and INTERRUPTION. The results demonstrated that the proposed OVT presents a dynamic response capable of satisfactorily measuring such disturbances and that it can be used as a power quality monitor for a 13.8 kV distribution system. Test on the proposed system concluded that it was capable to reproduce up to the 41st harmonic without significative distortion and impulsive surges up to 2.5 kHz. As an advantage, when compared with conventional systems to monitor power quality, the prototype can be remote-monitored, and therefore, be installed at strategic locations on distribution lines to be monitored kilometers away, without the need to be electrically powered.

scholarly journals Parasitic Loop Inductances Reduction in the PCB Layout in GaN-Based Power Converters Using S-Parameters and EM Simulations

Energies ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1495
Author(s):  
Loris Pace ◽  
Nadir Idir ◽  
Thierry Duquesne ◽  
Jean-Claude De Jaeger
Keyword(s):  
High Frequency ◽  
Printed Circuit Board ◽  
Power Converters ◽  
Calibration Procedure ◽  
Circuit Board ◽  
Design System ◽  
Switching Speed ◽  
Parasitic Inductance ◽  
Frequency Converters ◽  
S Parameters

Due to the high switching speed of Gallium Nitride (GaN) transistors, parasitic inductances have significant impacts on power losses and electromagnetic interferences (EMI) in GaN-based power converters. Thus, the proper design of high-frequency converters in a simulation tool requires accurate electromagnetic (EM) modeling of the commutation loops. This work proposes an EM modeling of the parasitic inductance of a GaN-based commutation cell on a printed circuit board (PCB) using Advanced Design System (ADS®) software. Two different PCB designs of the commutation loop, lateral (single-sided) and vertical (double-sided) are characterized in terms of parasitic inductance contribution. An experimental approach based on S-parameters, the Cold FET technique and a specific calibration procedure is developed to obtain reference values for comparison with the proposed models. First, lateral and vertical PCB loop inductances are extracted. Then, the whole commutation loop inductances including the packaging of the GaN transistors are determined by developing an EM model of the device’s internal parasitic. The switching waveforms of the GaN transistors in a 1 MHz DC/DC converter are given for the different commutation loop designs. Finally, a discussion is proposed on the presented results and the development of advanced tools for high-frequency GaN-based power electronics design.

Sign in / Sign up

Export Citation Format

Share Document