The analysis contains an engineering method for the approximate evaluation of thermally induced stresses in single and multilayered heteroepitaxial structures fabricated on thick substrates, with consideration of the finite size of the structure. The examined stresses include normal stresses, acting in the film layers themselves and responsible for their ultimate and fatigue strength, as well as interfacial stresses, responsible for film blistering and peeling. The developed formulas are simple, easy-to-use, and clearly indicate how material and structural characteristics affect the magnitude and the distribution of stresses and deflections. Some recommendations for smaller stresses in film structures are presented. The obtained results can be utilized as a guidance for physical design of multilayered heteroepitaxial structures in microelectronics.
