Development and status of high-voltage power supply and integrated control system for KSTAR ECH system

2022 ◽  
Vol 175 ◽  
pp. 112995
Sunggug Kim ◽  
Sonjong Wang ◽  
Mi Joung ◽  
Jongwon Han ◽  
Inhyok Rhee
2017 ◽  
Vol 823 ◽  
pp. 012035
Rasesh Dave ◽  
Jagruti Dharangutti ◽  
N P Singh ◽  
Aruna Thakar ◽  
Hitesh Dhola ◽  

2013 ◽  
Vol 409-410 ◽  
pp. 1445-1448
Min Peng

Maintenance and servicing to the EMU, in order to guarantee the operation safety, often need to stop high voltage power supply, using the ground power supply. As a result, need to provide a safe, stable and reliable ground auxiliary power supply for the EMU, ensure the normal maintenance, servicing and operation of various types of EMU. To this end, this paper based on the deployment of the ministry of railways and the requirements for configuration of ground power supply to the EMU, Analyze requirements of the auxiliary power supply system to the CRH2 EMU, on this basis, design the auxiliary power supply and its control system.

2003 ◽  
Vol 5 (4) ◽  
pp. 1873-1876
Hu Guofu ◽  
Ding Tonghai ◽  
Liu Baohua ◽  
Jiang Shufang

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1228
Marcin Winnicki ◽  
Artur Wiatrowski ◽  
Michał Mazur

High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In2O3 and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In2O3/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O2: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O2 mixture, together with the lowest resistivity of 0.03 Ω·cm.

Sign in / Sign up

Export Citation Format

Share Document