Hydrogen adsorption on graphene, hexagonal boron nitride, and graphene-like boron nitride-carbon heterostructures: A comparative theoretical study

2018 ◽  
Vol 43 (2) ◽  
pp. 801-808 ◽  
Author(s):  
Igor K. Petrushenko ◽  
Konstantin B. Petrushenko
2011 ◽  
Vol 112 (4) ◽  
pp. 664-667 ◽  
Author(s):  
M. V. Serzhantova ◽  
A. A. Kuzubov ◽  
A. S. Fedorov ◽  
P. O. Krasnov ◽  
F. N. Tomilin

2020 ◽  
Vol 22 (7) ◽  
pp. 4023-4031 ◽  
Author(s):  
Hongxia Zhu ◽  
Xiaolei Zhao ◽  
Huanhuan Li ◽  
Ruiqi Zhao

The stable geometries of both different-sized and magic clusters of CVD-prepared hexagonal BN on Ni(111)/Cu(111) are revealed based on DFT simulations.


2013 ◽  
Vol 19 (12) ◽  
pp. 5143-5152 ◽  
Author(s):  
Hong-mei Wang ◽  
Yue-jie Liu ◽  
Hong-xia Wang ◽  
Jing-xiang Zhao ◽  
Qing-hai Cai ◽  
...  

2008 ◽  
Vol 29 (2) ◽  
pp. 163-167 ◽  
Author(s):  
Jussi O. Koskilinna ◽  
Mikko Linnolahti ◽  
Tapani A. Pakkanen

2019 ◽  
Vol 4 (2) ◽  
pp. 72-79
Author(s):  
B. Chettri ◽  
P. K. Patra ◽  
Sunita Srivastava ◽  
Lalhriatzuala ◽  
Lalthakimi Zadeng ◽  
...  

In this work, we have constructed the hydrogenated hexagonal boron nitride (h-BN) by placing hydrogen atom at different surface sites. The possibility of hydrogen adsorption on the BN surface has been estimated by calculating the adsorption energy. The electronic properties were calculated for different hydrogenated BNs. The theoretical calculation was based on the Density Functional Theory (DFT). The electron-exchange energy was treated within the most conventional functional called generalized gradient approximation. The calculated band gap of pure BN is 3.80 eV. The adsorption of two H-atoms at two symmetrical sites of B and N sites reduces the band gap value to 3.5 eV. However, in all other combination the systems show dispersed band at the Fermi level exhibiting conducting behavior. Moreover, from the analysis of band structure and Density Of States we can conclude that, the hydrogenation tunes the band gap of hexagonal boron nitride.


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