scholarly journals Electronic Properties of Hydrogenated Hexagonal Boron Nitride (h-BN): DFT Study

2019 ◽  
Vol 4 (2) ◽  
pp. 72-79
Author(s):  
B. Chettri ◽  
P. K. Patra ◽  
Sunita Srivastava ◽  
Lalhriatzuala ◽  
Lalthakimi Zadeng ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Band Gap ◽  
Electronic Properties ◽  
Density Functional ◽  
Hydrogen Adsorption ◽  
Hexagonal Boron Nitride ◽  
Generalized Gradient ◽  
Functional Theory ◽  
Generalized Gradient Approximation ◽  
The Density Functional Theory

In this work, we have constructed the hydrogenated hexagonal boron nitride (h-BN) by placing hydrogen atom at different surface sites. The possibility of hydrogen adsorption on the BN surface has been estimated by calculating the adsorption energy. The electronic properties were calculated for different hydrogenated BNs. The theoretical calculation was based on the Density Functional Theory (DFT). The electron-exchange energy was treated within the most conventional functional called generalized gradient approximation. The calculated band gap of pure BN is 3.80 eV. The adsorption of two H-atoms at two symmetrical sites of B and N sites reduces the band gap value to 3.5 eV. However, in all other combination the systems show dispersed band at the Fermi level exhibiting conducting behavior. Moreover, from the analysis of band structure and Density Of States we can conclude that, the hydrogenation tunes the band gap of hexagonal boron nitride.

scholarly journals New polymorphic varieties of boron nitride with graphene-like structures

2021 ◽  
Vol 13 (3) ◽  
pp. 349-354
Author(s):  
Dmitry S. Ryashnetsev ◽  
◽  
Eugeny A. Belenkov ◽  
Keyword(s):  
Boron Nitride ◽  
Density Functional ◽  
Density Functional Theory Method ◽  
Geometric Optimization ◽  
First Principle ◽  
Generalized Gradient ◽  
Functional Theory ◽  
Generalized Gradient Approximation ◽  
The Density Functional Theory ◽  
Nitride Layers

First-principle calculations of the structure and electronic properties of four new polymorphic varieties of graphene-like boron nitride, the structure of which is similar to the structure of graphene polymorphs, the atoms in which are in the spirit of different structural positions, were performed by the density functional theory method in the generalized gradient approximation. As a result of the studies carried out, the possibility of stable existence of three monoatomic boron nitride layers: BN-L4-6-8a, BN-L4-6-8b and BN-L4-10 has been established. The BN-L4-12 layer is transformed into the BN-L4-6-8 layer during geometric optimization. The lengths of interatomic bonds in boron nitride monolayers vary in the range 1.4353 Å ÷ 1.4864 Å, and the bond angles in the range 84.05° ÷ 152.26°. The band gap of the BN layers varies from 3.16 eV to 3.90 eV. Sublimation energies are in the range from 16.67 eV/(BN) to 17.61 eV/(BN).

First-Principle Study of Structural and Electronic Properties of Ti-Doped SnO2

2013 ◽  
Vol 634-638 ◽  
pp. 2545-2549 ◽  
Author(s):  
Jing Kai Yang ◽  
Hong Li Zhao ◽  
Yan Zhu ◽  
Li Ping Zhao ◽  
Jian Li
Keyword(s):  
Electronic Properties ◽  
Density Functional ◽  
First Principle ◽  
Generalized Gradient ◽  
Functional Theory ◽  
First Principle Calculations ◽  
Generalized Gradient Approximation ◽  
The Density Functional Theory ◽  
Structural And Electronic Properties ◽  
Calculation Results

The structural and electronic properties of Ti-doped SnO2with 6.25 at.% are investigated with the first principle calculations based on the density functional theory within the generalized gradient approximation. The calculation results indicate that the crystal structure of Sn0.9375Ti0.0625O2possesses a smaller volume; the bond length of Ti-O is shorter than that of Sn-O; the relative angle θ change value of Sn-O-Sn→Ti-O-Ti is about 1.07%. Ti-O bond possesses more covalent ingredient and stronger bond energy than Sn-O bond. After the replacement of one Ti atom, O atom bonded with Ti atom possessed fewer electrons, the ratio of charges possessed by Ti atom and O atom dose not agree with the stoichiometry of compound, create more holes at the top of VB of Sn0.9375Ti0.0625O2, and lead to the increase of the conductivity.

A DFT study of structural and electronic properties of Zn1−xSbxTe with x = (0.25,0.50,0.75)

2017 ◽  
Vol 31 (01) ◽  
pp. 1650249
Author(s):  
Diwaker ◽  
Ashwani Kumar
Keyword(s):  
Electronic Properties ◽  
Density Functional ◽  
Generalized Gradient ◽  
Functional Theory ◽  
Text Type ◽  
Exchange Correlation ◽  
Generalized Gradient Approximation ◽  
The Density Functional Theory ◽  
Structural And Electronic Properties ◽  
Sb Doping

In the present work, we report the structural and the electronic properties of the alloy [Formula: see text] with [Formula: see text] and [Formula: see text]. Ab initio calculations are based upon the density functional theory with generalized gradient approximation and Perdew–Burke–Ernzerhof (PBE) exchange–correlation functional. In our calculations, we found that antimony (Sb) doping in zinc telluride (ZnTe) system introduces some bands which mainly originate from [Formula: see text]- and [Formula: see text]-states of Te and Sb atom and are primarily responsible for [Formula: see text]-type and [Formula: see text]-type conductivity.

An Investigation of Half-Metallic Ferromagnets Behavior in Hg2CuTi-Type Heusler Alloy Ti2FeAl by Using GGA

2012 ◽  
Vol 535-537 ◽  
pp. 1291-1294 ◽  
Author(s):  
Xiu De Yang ◽  
Bo Wu ◽  
Song Zhang
Keyword(s):  
Density Functional Theory ◽  
Heusler Alloy ◽  
Density Functional ◽  
Generalized Gradient ◽  
Functional Theory ◽  
Half Metallic ◽  
Generalized Gradient Approximation ◽  
Indirect Exchange ◽  
The Density Functional Theory ◽  
Direct Hybridization

By using generalized gradient approximation (GGA) scheme within the density functional theory (DFT), the electronic and magnetic properties of Hg2CuTi-type Heusler alloy Ti2FeAl were investigated. The results reveal that a 100% spin polarization appears at Fermi level (εF) in Ti2FeAl, and is maintained during lattice range of 5.1Å~6.2Å. Ti2FeAl is one of stable Half-Metallic Ferromagnets (HMF) with a spin-minority gap of 0.5 eV at εF and total magnetic moment of 1μB per unit cell. Our studies also indicate that the competition between RKKY-type indirect exchange and direct hybridization of d-electronic atoms plays a dominating role in determining the magnetism.

scholarly journals Carbon-Based Band Gap Engineering in the h-BN Analytical Modeling

Materials ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1026
Author(s):  
Mohammad Taghi Ahmadi ◽  
Ahmad Razmdideh ◽  
Seyed Saeid Rahimian Koloor ◽  
Michal Petrů
Keyword(s):  
Boron Nitride ◽  
Band Gap ◽  
Density Functional ◽  
Hexagonal Boron Nitride ◽  
Tight Binding ◽  
Band Gap Energy ◽  
Specific Structure ◽  
Partial Substitution ◽  
Generalized Gradient ◽  
Complete Replacement

The absence of a band gap in graphene is a hindrance to its application in electronic devices. Alternately, the complete replacement of carbon atoms with B and N atoms in graphene structures led to the formation of hexagonal boron nitride (h-BN) and caused the opening of its gap. Now, an exciting possibility is a partial substitution of C atoms with B and N atoms in the graphene structure, which caused the formation of a boron nitride composite with specified stoichiometry. BC2N nanotubes are more stable than other triple compounds due to the existence of a maximum number of B–N and C–C bonds. This paper focused on the nearest neighbor’s tight-binding method to explore the dispersion relation of BC2N, which has no chemical bond between its carbon atoms. More specifically, the band dispersion of this specific structure and the effects of energy hopping in boron–carbon and nitrogen–carbon atoms on the band gap are studied. Besides, the band structure is achieved from density functional theory (DFT) using the generalized gradient approximations (GGA) approximation method. This calculation shows that this specific structure is semimetal, and the band gap energy is 0.167 ev.

scholarly journals Tuning Electronic Structures of BN and C Double-Wall Hetero-Nanotubes

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Xueran Liu ◽  
Meijun Han ◽  
Xinjiang Zhang ◽  
Haijun Hou ◽  
Shaoping Pang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electric Field ◽  
Electronic Structures ◽  
Density Functional ◽  
Transverse Electric ◽  
First Principle ◽  
Generalized Gradient ◽  
Functional Theory ◽  
Generalized Gradient Approximation ◽  
Double Wall

First principle calculations based on density functional theory with the generalized gradient approximation were carried out to investigate the energetic and electronic properties of carbon and boron nitride double-wall hetero-nanotubes (C/BN-DWHNTs) with different chirality and size, including an armchair (n,n) carbon nanotube (CNT) enclosed in (m,m) boron nitride nanotube (BNNT) and a zigzag (n, 0) CNT enclosed in (m, 0) BNNT. The electronic structure of these DWHNTs under a transverse electric field was also investigated. The ability to tune the band gap with changing the intertube distance (di) and imposing an external electric field (F) of zigzag DWHNTs provides the possibility for future electronic and electrooptic nanodevice applications.

MAGNETIC MAP OF MnNi ALLOYED MONOLAYER ON Cu(001) SUBSTRATE: AB-INITIO CALCULATIONS

2010 ◽  
Vol 09 (06) ◽  
pp. 619-622
Author(s):  
BOTHINA A. HAMAD
Keyword(s):  
Density Functional ◽  
Theoretical Study ◽  
Magnetic Moments ◽  
Generalized Gradient ◽  
Functional Theory ◽  
Exchange Correlation ◽  
Generalized Gradient Approximation ◽  
Exchange Correlation Potential ◽  
The Density Functional Theory ◽  
Correlation Potential

In this work, a theoretical study of the structural, electronic and magnetic properties are presented for Mn 0.5 Ni 0.5 alloyed overlayer adsorbed on Cu (001) surface. The calculations were performed using the density functional theory (DFT) and the exchange-correlation potential was treated by the generalized gradient approximation (GGA). The system was fully relaxed except for the central layer, which yields to outward relaxations and inward Mn and Ni surface atoms, respectively in the ferromagnetic and antiferromagnetic configurations. The in-plane ferromagnetic configuration was found to be more stable than the antiferromagnetic one by 25 meV/atom. The local magnetic moments of Mn atoms were found to be about 4 μ B , whereas those of the Ni atoms where found to be 0.46 μ B .

Graphene-Based Sensors for Monitoring Strain

2013 ◽  
Vol 3 (1) ◽  
pp. 74-83
Author(s):  
M. Mirnezhad ◽  
R. Ansari ◽  
H. Rouhi ◽  
M. Faghihnasiri
Keyword(s):  
Fermi Level ◽  
Band Gap ◽  
Strain Distribution ◽  
Density Functional ◽  
Tight Binding ◽  
Density Functional Theory Calculations ◽  
Generalized Gradient ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Gap Opening

The application of graphene as a nanosensor in measuring strain through its band structure around the Fermi level is investigated in this paper. The mechanical properties of graphene as well as its electronic structure are determined by using the density functional theory calculations within the framework of generalized gradient approximation. In the case of electronic properties, the simulations are applied for symmetrical and asymmetrical strain distributions in elastic range; also the tight-binding approach is implemented to verify the results. It is indicated that the energy band gap does not change with the symmetrical strain distribution but depend on the asymmetric strain distribution, increasing strain leads to band gap opening around the Fermi level.

THEORETICAL STUDY OF THE BAND GAP OF SrSe AND SrTe IN GW APPROXIMATION

2011 ◽  
Vol 25 (23) ◽  
pp. 1905-1914
Author(s):  
XIAO LING ZHU ◽  
HONG ZHANG ◽  
XIN LU CHENG
Keyword(s):  
Band Gap ◽  
Density Functional ◽  
Theoretical Study ◽  
Generalized Gradient ◽  
Gw Approximation ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Structural And Electronic Properties ◽  
Experimental Values ◽  
Interaction Approximation

Using the first-principles pseudopotential method within a generalized gradient approximation of the density functional theory, the structural and electronic properties of SrSe and SrTe have been studied. The calculated lattice parameters are in excellent agreement with experimental values, whereas the error in the minimum gap value is as high as 43.25% in SrSe . To get reliable band gap values of SrSe and SrTe , we employ the GW (G is the Green's function and W is the screened Coulomb interaction) approximation method. The result in GW approximation improves the band gap value of the SrSe greatly and agrees with the value of experimental measurement.

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