An in-band diode-end-pumped high-power and high-efficiency ultrashort pulse Nd:YVO4 bulk laser mode-locked by a frequency doubling LBO crystal

2021 ◽  
pp. 103759
Author(s):  
Jingyu Zou ◽  
Lunbin Zhou ◽  
Wanxin Zheng ◽  
Kai Feng ◽  
Bin Xu
2013 ◽  
Vol 321-324 ◽  
pp. 482-485
Author(s):  
Zhi Chao Wu ◽  
Xiu Li Zhang

The Nd:YAG ceramic laser at 670 nm was studied by means of dispersion prism and KTP intracavity-frequency-doubling. We designed and optimized the cavity parameters by MatrixLaser software based on the standard ABCD ray propagation matrix. By using the laser diode arrays side-pumped Nd:YAG ceramic crystal with Nd doping concentration of 1.1at% and dimension of Φ3×50 mm, the Nd:YAG ceramic laser at 670 nm was realized. Under repetition rate of 1 000Hz and single pulse pumped energy of 144 mJ, the output energy of 5.1mJ at 670 nm is obtained. The optic-optic efficiency is 3.54%. The results not only formed the basis for the further development of the high power and high efficiency ceramic red laser, but also provided a great prospect for the high power ceramic red laser in the field of medical treatment, color display and other areas of application.


2021 ◽  
Author(s):  
Chen-Hao FENG ◽  
Sébastien VIDAL ◽  
Paul Robert ◽  
Philippe Bouyer ◽  
Bruno Desruelles ◽  
...  

2009 ◽  
Author(s):  
Jean-Francois Seurin ◽  
Guoyang Xu ◽  
Viktor Khalfin ◽  
Alexander Miglo ◽  
James D. Wynn ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Rohith Mittapally ◽  
Byungjun Lee ◽  
Linxiao Zhu ◽  
Amin Reihani ◽  
Ju Won Lim ◽  
...  

AbstractThermophotovoltaic approaches that take advantage of near-field evanescent modes are being actively explored due to their potential for high-power density and high-efficiency energy conversion. However, progress towards functional near-field thermophotovoltaic devices has been limited by challenges in creating thermally robust planar emitters and photovoltaic cells designed for near-field thermal radiation. Here, we demonstrate record power densities of ~5 kW/m2 at an efficiency of 6.8%, where the efficiency of the system is defined as the ratio of the electrical power output of the PV cell to the radiative heat transfer from the emitter to the PV cell. This was accomplished by developing novel emitter devices that can sustain temperatures as high as 1270 K and positioning them into the near-field (<100 nm) of custom-fabricated InGaAs-based thin film photovoltaic cells. In addition to demonstrating efficient heat-to-electricity conversion at high power density, we report the performance of thermophotovoltaic devices across a range of emitter temperatures (~800 K–1270 K) and gap sizes (70 nm–7 µm). The methods and insights achieved in this work represent a critical step towards understanding the fundamental principles of harvesting thermal energy in the near-field.


Author(s):  
Gangxiong Wu ◽  
Yanyu Wei ◽  
Qian Li ◽  
Xia Lei ◽  
Chong Ding ◽  
...  

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