Atomic vacancy defect in 〈110〉 oriented TbDyFe alloy and its effect on the magnetostrictions

2008 ◽  
Vol 452 (2) ◽  
pp. 419-420 ◽  
Author(s):  
X.X. Gao ◽  
M.C. Zhang ◽  
H.J. Tang ◽  
J. Zhu ◽  
S.Z. Zhou
2020 ◽  
Vol 10 (7) ◽  
pp. 2450
Author(s):  
Tingyan Zhou ◽  
Wan Zhao ◽  
Kun Yang ◽  
Qian Yao ◽  
Yangjun Li ◽  
...  

Using first-principles calculations based on the density functional theory, the effects of atomic vacancy defect, Frenkel-type defect and transition metal Z (Z = Sc, V and Zr) doping on magnetic and electric properties of the Ti4N3 MXene nanosheet were investigated comprehensively. The surface Ti and subsurface N atomic vacancies are both energetically stable based on the calculated binding energy and formation energy. In addition, the former appears easier than the latter. They can both enhance the magnetism of the Ti4N3 nanosheet. For atom-swapped disordering, the surface Ti-N swapped disordering is unstable, and then the Frenkel-type defect will happen. In the Frenkel-type defect system, the total magnetic moment decreases due to the enhancement of indirect magnetic exchange between surface Ti atoms bridged by the N atom. A relatively high spin polarizability of approximately 70% was detected. Furthermore, the doping effects of transition metal Z (Z = Sc, V and Zr) on Ti4N3 nanosheet are explored. All doped systems are structurally stable and have relatively large magnetism, which is mainly induced by the directed magnetic exchange between surface Z and Ti atoms. Especially in the doped Ti4N3-Sc system, the high spin polarizability is still reserved, suggesting that this doped system can be a potential candidate for application in spintronics.


Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3451
Author(s):  
Liu Chu ◽  
Jiajia Shi ◽  
Eduardo Souza de Cursi

The identification of atomic vacancy defects in graphene is an important and challenging issue, which involves inhomogeneous spatial randomness and requires high experimental conditions. In this paper, the fingerprints of resonant frequency for atomic vacancy defect identification are provided, based on the database of massive samples. Every possible atomic vacancy defect in the graphene lattice is considered and computed by the finite element model in sequence. Based on the sample database, the histograms of resonant frequency are provided to compare the probability density distributions and interval ranges. Furthermore, the implicit relationship between the locations of the atomic vacancy defects and the resonant frequencies of graphene is established. The fingerprint patterns are depicted by mapping the locations of atomic vacancy defects to the resonant frequency magnitudes. The geometrical characteristics of computed fingerprints are discussed to explore the feasibility of atomic vacancy defects identification. The work in this paper provides meaningful supplementary information for non-destructive defect detection and identification in nanomaterials.


2021 ◽  
pp. 2000631
Author(s):  
Zihao Wang ◽  
Xiumei Dong ◽  
Zhiyuan Chen ◽  
Houhua Xiong ◽  
Jie Gao ◽  
...  

2021 ◽  
Vol 6 (1) ◽  
Author(s):  
Qianheng Du ◽  
Lijun Wu ◽  
Huibo Cao ◽  
Chang-Jong Kang ◽  
Christie Nelson ◽  
...  

AbstractIron diantimonide is a material with the highest known thermoelectric power. By combining scanning transmission electron microscopic study with electronic transport neutron, X-ray scattering, and first principle calculation, we identify atomic defects that control colossal thermopower magnitude and nanoprecipitate clusters with Sb vacancy ordering, which induce additional phonon scattering and substantially reduce thermal conductivity. Defects are found to cause rather weak but important monoclinic distortion of the unit cell Pnnm → Pm. The absence of Sb along [010] for high defect concentration forms conducting path due to Fe d orbital overlap. The connection between atomic defect anisotropy and colossal thermopower in FeSb2 paves the way for the understanding and tailoring of giant thermopower in related materials.


2000 ◽  
Vol 61 (7) ◽  
pp. 4659-4666 ◽  
Author(s):  
P. Johannesen ◽  
B. Bech Nielsen ◽  
J. R. Byberg

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