Indium oxide thin film prepared by low temperature atomic layer deposition using liquid precursors and ozone oxidant

2015 ◽  
Vol 649 ◽  
pp. 216-221 ◽  
Author(s):  
W.J. Maeng ◽  
Dong-Won Choi ◽  
Jozeph Park ◽  
Jin-Seong Park
2018 ◽  
Vol 113 (11) ◽  
pp. 112102 ◽  
Author(s):  
Jongchan Lee ◽  
Jaehyun Moon ◽  
Jae-Eun Pi ◽  
Seong-Deok Ahn ◽  
Himchan Oh ◽  
...  

2016 ◽  
Vol 4 (28) ◽  
pp. 6873-6880 ◽  
Author(s):  
H.-I. Yeom ◽  
J. B. Ko ◽  
G. Mun ◽  
S.-H. Ko Park

A thin-film transistor with a 5 nm-thick indium oxide active layer deposited by plasma-enhanced atomic layer deposition (PEALD) showed outstanding performance even with a polycrystalline phase.


2012 ◽  
Vol 51 (2S) ◽  
pp. 02BF04 ◽  
Author(s):  
Yumi Kawamura ◽  
Mai Tani ◽  
Nozomu Hattori ◽  
Naomasa Miyatake ◽  
Masahiro Horita ◽  
...  

2012 ◽  
Vol 51 (2) ◽  
pp. 02BF04 ◽  
Author(s):  
Yumi Kawamura ◽  
Mai Tani ◽  
Nozomu Hattori ◽  
Naomasa Miyatake ◽  
Masahiro Horita ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document