Nanostructures in various Au ion-implanted ZnO facets modified using energetic O ions

New polycrystalline phase has been created by 1 MeV Au ion implantation in non-polar ZnO facets and diminished after 10 MeV O-ion irradiation, hcp-Au nanoparticles of various sizes have been created in all ZnO facets.

Эпитаксиальный рост пленок селенида кадмия на кремнии с буферным слоем карбида кремния

An epitaxial cubic 350-nm-thick cadmium selenide has been grown on silicon for the first time by the method of evaporation and condensation in a quasi-closed volume. It is revealed that, in this method, the optimum substrate temperature is 590°C, the evaporator temperature is 660°C, and the growth time is 2 s. To avoid silicon etching by selenium with formation of amorphous SiSe_2, a high-quality ~100-nm-thick buffer silicon carbide layer has been synthesized on the silicon surface by substituting atoms. The powder diffraction pattern and the Raman spectrum unambiguously correspond to cubic cadmium selenide crystal. The ellipsometric, Raman, and electron diffraction analyses demonstrate high structural perfection of the cadmium selenide layer and the absence of a polycrystalline phase.

The microstructure and piezoelectric properties of Sb-modified and Ca-modified (K,Na)NbO3 nanowires with polycrystalline phase boundaries

The synthesis of a Ca-modified (K,Na)NbO3 one-dimensional nanowire with a polycrystalline phase boundary and its investigation by convergent beam electron diffraction (CBED).

Synthesis, Structure and Spectral Properties of Eu:YGO Phosphor Powders

3at. % Eu3+ doped (Y, Gd)2O3 precursor powders with various compositions were synthesized via a sol-gel process, and the precursors were sintered at different temperatures. XRD, FT-IR, Raman and photoluminescence spectroscopy were used to study the phase, microstructure and luminescent properties of the precursors and the sintered powders. The results show that pure (Y, Gd)2O3 polycrystalline phase can be obtained from sintering the precursors at 700°C. The influences of the host compositions on the microstructures and fluorescence properties were analyzed, and the optimized composition was obtained for 3at. % Eu3+ doped (Y, Gd)2O3 powders.

High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition

A thin-film transistor with a 5 nm-thick indium oxide active layer deposited by plasma-enhanced atomic layer deposition (PEALD) showed outstanding performance even with a polycrystalline phase.

RHEED Study of Epitaxial Graphene on Conductive and Semi-Insulating 6H-SiC (0001) Substrates

The technique of reflection high-energy electron diffraction (RHEED) has been applied to study the graphene growth on conductive and semi-insulating 6H-SiC (0001) substrates using two RHEED devices. It was found the oriented growth of graphene on the conductive wafer and both oriented as disordered graphene growth on semi-insulating wafer due to the partial formation of polycrystalline component in nanocarbon film. It was shown that the appearance of the graphene polycrystalline phase was caused by the lower perfection structure of the surface of the semi-insulating substrate as compared to the conductive substrate.