High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
2016 ◽
Vol 4
(28)
◽
pp. 6873-6880
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Keyword(s):
A thin-film transistor with a 5 nm-thick indium oxide active layer deposited by plasma-enhanced atomic layer deposition (PEALD) showed outstanding performance even with a polycrystalline phase.
2015 ◽
Vol 46
(S1)
◽
pp. 52-52
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Keyword(s):
2016 ◽
Vol 8
(40)
◽
pp. 26924-26931
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2015 ◽
Vol 649
◽
pp. 216-221
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Keyword(s):
Keyword(s):
2014 ◽
Vol 6
(20)
◽
pp. 17481-17488
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Keyword(s):
2016 ◽
Vol 37
(1)
◽
pp. 39-42
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Keyword(s):
2014 ◽
Vol 32
(4)
◽
pp. 041202
◽
Keyword(s):
2017 ◽
Vol 9
(28)
◽
pp. 23934-23940
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Keyword(s):
Keyword(s):