Paper No S12.2: High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition

2015 ◽  
Vol 46 (S1) ◽  
pp. 52-52 ◽  
Author(s):  
H. I. Yeom ◽  
J. B. Ko ◽  
C.-S. Hwang ◽  
S. Cho ◽  
S.-H. K. Park
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Jaehyun Moon ◽  
Jae-Eun Pi ◽  
Seong-Deok Ahn ◽  
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...  

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pp. 6873-6880 ◽  
Author(s):  
H.-I. Yeom ◽  
J. B. Ko ◽  
G. Mun ◽  
S.-H. Ko Park

A thin-film transistor with a 5 nm-thick indium oxide active layer deposited by plasma-enhanced atomic layer deposition (PEALD) showed outstanding performance even with a polycrystalline phase.


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Vol 383 ◽  
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Eun Ae Jung ◽  
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Dong-won Choi ◽  
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Gi-Yeop Kim ◽  
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2021 ◽  
Vol 52 (S2) ◽  
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Author(s):  
Dedong Han ◽  
Huijin Li ◽  
Junchen Dong ◽  
Xiaobin Zhou ◽  
Qi Li ◽  
...  

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