Paper No S12.2: High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition

2015 ◽  
Vol 46 (S1) ◽  
pp. 52-52 ◽  
Author(s):  
H. I. Yeom ◽  
J. B. Ko ◽  
C.-S. Hwang ◽  
S. Cho ◽  
S.-H. K. Park
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Layer Deposition ◽  
Indium Oxide Thin Film

High mobility ultra-thin crystalline indium oxide thin film transistor using atomic layer deposition

2018 ◽  
Vol 113 (11) ◽  
pp. 112102 ◽  
Author(s):  
Jongchan Lee ◽  
Jaehyun Moon ◽  
Jae-Eun Pi ◽  
Seong-Deok Ahn ◽  
Himchan Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Indium Oxide ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Layer Deposition ◽  
Indium Oxide Thin Film

scholarly journals High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition

2016 ◽  
Vol 4 (28) ◽  
pp. 6873-6880 ◽  
Author(s):  
H.-I. Yeom ◽  
J. B. Ko ◽  
G. Mun ◽  
S.-H. Ko Park
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Indium Oxide ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Layer Deposition ◽  
Polycrystalline Phase ◽  
Indium Oxide Thin Film

A thin-film transistor with a 5 nm-thick indium oxide active layer deposited by plasma-enhanced atomic layer deposition (PEALD) showed outstanding performance even with a polycrystalline phase.

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