Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects

2016 ◽  
Vol 686 ◽  
pp. 1025-1031 ◽  
Author(s):  
Hyun-Jung Lee ◽  
Tae Eun Hong ◽  
Soo-Hyun Kim
Keyword(s):  
Diffusion Barrier ◽  
Atomic Layer ◽  
Cu Interconnects ◽  
Mn Diffusion

Interface stability and microstructure of ultrathin Mo/MoN diffusion barrier in Cu interconnects

2013 ◽  
Vol 17 (sup1) ◽  
pp. 70-74
Author(s):  
C. H. Liu ◽  
Y. Z. Jin ◽  
X. J. Cui ◽  
R. S. Yang ◽  
Q. S. Fu ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Interface Stability ◽  
Cu Interconnects

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

Some Insights into Atomic Layer Deposition of MoNx Using Mo(CO)6 and NH3 and Its Diffusion Barrier Application

2019 ◽  
Vol 31 (20) ◽  
pp. 8338-8350 ◽  
Author(s):  
Tae Hyun Kim ◽  
Dip K. Nandi ◽  
Rahul Ramesh ◽  
Seung-Min Han ◽  
Bonggeun Shong ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Layer Deposition

Self-reconstructed interlayer derived by in-situ Mn diffusion from La0.5Sr0.5MnO3 via atomic layer deposition for an efficient bi-functional electrocatalyst

Nano Energy ◽  
2020 ◽  
Vol 71 ◽  
pp. 104564 ◽  
Author(s):  
Arim Seong ◽  
Jeongwon Kim ◽  
Ohhun Kwon ◽  
Hu Young Jeong ◽  
Raymond J. Gorte ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Mn Diffusion

Diffusion Barrier Properties of Atomic Layer Deposited Ultrathin Ta[sub 2]O[sub 5] and TiO[sub 2] Films

2006 ◽  
Vol 153 (4) ◽  
pp. G304 ◽  
Author(s):  
Petra Alén ◽  
Marko Vehkamäki ◽  
Mikko Ritala ◽  
Markku Leskelä
Keyword(s):  
Diffusion Barrier ◽  
Atomic Layer ◽  
Barrier Properties

A bilayer diffusion barrier of Ru/WSixNy for advanced Cu interconnects

2012 ◽  
Vol 521 ◽  
pp. 73-77 ◽  
Author(s):  
Tae-Kwang Eom ◽  
Windu Sari ◽  
Taehoon Cheon ◽  
Soo-Hyun Kim ◽  
Woo Kyoung Kim
Keyword(s):  
Diffusion Barrier ◽  
Cu Interconnects
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