Composition range of semiconducting amorphous Fe-Si thin films interpreted using a cluster-based short-range-order model

Kaul & Saxena [Acta Cryst. (1977), A33, 992-996] have reported the existence of long-range and short-range order in a non-stoichiometric phase 'LnO x ' (Ln = rare earth). It is shown that the experiments they are describing are indeed the oxidation of the rare-earth hydride LnH2 into the rare-earth cubic C-type sesquioxide. The interpretation they give of their experiments is to be discarded entirely.

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Short-range order inAB3binary alloy thin films

Physical Review B ◽

10.1103/physrevb.74.205402 ◽

2006 ◽

Vol 74 (20) ◽

Cited By ~ 2

Author(s):

I. Zasada ◽

A. Sukiennicki ◽

L. Wojtczak ◽

F. L. Castillo Alvarado

Keyword(s):

Thin Films ◽

Short Range ◽

Short Range Order ◽

Range Order

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Short range order of amorphous Sb2S3 thin films: An x-ray diffraction study

Solid State Communications ◽

10.1016/0038-1098(87)90046-9 ◽

1987 ◽

Vol 62 (11) ◽

pp. 773-776 ◽

Cited By ~ 6

Author(s):

G. Dalba ◽

P. Fornasini ◽

G. Giunta

Keyword(s):

Thin Films ◽

Diffraction Study ◽

Short Range ◽

Short Range Order ◽

Range Order ◽

X Ray Diffraction ◽

X Ray

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Detection of short range order in SiO2 thin-films by grazing-incidence wide and small-angle X-ray scattering

Journal of Applied Physics ◽

10.1063/1.4947053 ◽

2016 ◽

Vol 119 (15) ◽

pp. 154103

Author(s):

Kohki Nagata ◽

Atsushi Ogura ◽

Ichiro Hirosawa ◽

Tomoyuki Suwa ◽

Akinobu Teramoto ◽

...

Keyword(s):

Thin Films ◽

Small Angle ◽

Short Range ◽

Short Range Order ◽

Grazing Incidence ◽

Range Order ◽

X Ray ◽

X Ray Scattering ◽

Ray Scattering

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Short-range order in amorphous co-sputtered Ta-Al thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100145649 ◽

1986 ◽

Vol 44 ◽

pp. 860-861

Author(s):

J.C. Barry ◽

R.S. Timsit ◽

D. Landheer

Keyword(s):

Thin Film ◽

Thin Films ◽

Electron Microscope ◽

High Resolution ◽

Short Range ◽

Short Range Order ◽

Range Order ◽

Transmission Electron ◽

Thin Film Resistors ◽

Diffraction Patterns

Tantalum-aluminium thin films have assumed considerable technological importance since the discovery in the late 1960's that the films are useful in the fabrication of thin film resistors and capacitors. It is generally claimed that these films, when prepared by co-sputtering Ta and Al, are amorphous over a range of Ta concentrations extending approximately from 15 to 75 at%, and are crystalline beyond this range. Diffuse electron diffraction patterns and ‘mottle pattern’ transmission electron micrographs are typical characteristics of the amorphous phase. In this present study we have attempted to identify any atomic short range order in the amorphous Ta-Al films and to follow the changes in this order as the Ta concentration increases across the amorphous/crystalline transition. The co-sputtered Ta-Al films of ≈100A thickness were examined in a high resolution 4000EX electron microscope (top entry, ±15°(x,y) tilt, Cs = 1.0mm ) at 400kV.

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