Multi-component AlCrTaTiZrMo-nitride film with high diffusion resistance in copper metallization

2018 ◽  
Vol 748 ◽  
pp. 258-264 ◽  
Author(s):  
Rongbin Li ◽  
Bangwei Qiao ◽  
Hailong Shang ◽  
Jing Zhang ◽  
Chunxia Jiang ◽  
...  
Keyword(s):  
Copper Metallization ◽  
Nitride Film ◽  
Diffusion Resistance ◽  
High Diffusion

Development of tungsten nitride film as barrier layer for copper metallization

2000 ◽  
Vol 18 (1) ◽  
pp. 237 ◽  
Author(s):  
Seshadri Ganguli ◽  
Ling Chen ◽  
Timothy Levine ◽  
Bo Zheng ◽  
Mei Chang
Keyword(s):  
Barrier Layer ◽  
Copper Metallization ◽  
Nitride Film ◽  
Tungsten Nitride

Thermally stable amorphous (AlMoNbSiTaTiVZr)50N50 nitride film as diffusion barrier in copper metallization

2008 ◽  
Vol 92 (5) ◽  
pp. 052109 ◽  
Author(s):  
Ming-Hung Tsai ◽  
Chun-Wen Wang ◽  
Chia-Han Lai ◽  
Jien-Wei Yeh ◽  
Jon-Yiew Gan
Keyword(s):  
Diffusion Barrier ◽  
Copper Metallization ◽  
Nitride Film ◽  
Thermally Stable

Macromolecular Nutriend Limitations of Encapsulated Cells

1993 ◽  
Vol 331 ◽  
Author(s):  
Erik Einar Hancock ◽  
Linda Griffith Cima
Keyword(s):  
Diffusion Resistance ◽  
Encapsulated Cells ◽  
Term Function ◽  
High Diffusion

AbstractEncapsulated cells are likely to encounter transport limitations of trace nutrients carried by macromolecules due to a high diffusion resistance in the encapsulating membrane. We modeled the transport of transferrin to encapsulated cells and found that the transport limitation of transferrin is potentially significant in comparison to oxygen, which is limiting in unencapsulated tissue. Since transferrin is the primary biological iron carrier, deprivation of transferrin to encapsulated cells may limit long term function and viability in vivo.

scholarly journals Applications of High Diffusion Resistance Multi‐component AlCrTaTiZrRu/(AlCrTaTiZrRu)N 0.7 Film in Cu Interconnects

2020 ◽  
Vol 22 (11) ◽  
pp. 2000557
Author(s):  
Rongbin Li ◽  
Tongtong Chen ◽  
Chunxia Jiang ◽  
Jing Zhang ◽  
Yong Zhang ◽  
...  
Keyword(s):  
Diffusion Resistance ◽  
Cu Interconnects ◽  
High Diffusion

Characteristics of a 10nm-thick (TiVCr)N multi-component diffusion barrier layer with high diffusion resistance for Cu interconnects

2011 ◽  
Vol 205 (21-22) ◽  
pp. 5064-5067 ◽  
Author(s):  
Du-Cheng Tsai ◽  
Yen-Lin Huang ◽  
Sheng-Ru Lin ◽  
De-Ru Jung ◽  
Shou-Yi Chang ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Diffusion Barrier ◽  
Diffusion Resistance ◽  
Cu Interconnects ◽  
High Diffusion ◽  
Diffusion Barrier Layer
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