Ultra-Thin (AlCrTaTiZr)Nx/AlCrTaTiZr Bilayer Structures of High Diffusion Resistance to Cu Metallization

2019 ◽  
Vol 28 (2) ◽  
pp. 361-372
Author(s):  
Shou-Yi Chang ◽  
Dao-Sheng Chen
Keyword(s):  
Diffusion Resistance ◽  
Cu Metallization ◽  
High Diffusion

Ultrathin (AlCrTaTiZr)N[sub x]/AlCrTaTiZr Bilayer Structures with High Diffusion Resistance for Cu Interconnects

2010 ◽  
Vol 157 (6) ◽  
pp. G154 ◽  
Author(s):  
Shou-Yi Chang ◽  
Dao-Sheng Chen
Keyword(s):  
Diffusion Resistance ◽  
Cu Interconnects ◽  
High Diffusion

Macromolecular Nutriend Limitations of Encapsulated Cells

1993 ◽  
Vol 331 ◽  
Author(s):  
Erik Einar Hancock ◽  
Linda Griffith Cima
Keyword(s):  
Diffusion Resistance ◽  
Encapsulated Cells ◽  
Term Function ◽  
High Diffusion

AbstractEncapsulated cells are likely to encounter transport limitations of trace nutrients carried by macromolecules due to a high diffusion resistance in the encapsulating membrane. We modeled the transport of transferrin to encapsulated cells and found that the transport limitation of transferrin is potentially significant in comparison to oxygen, which is limiting in unencapsulated tissue. Since transferrin is the primary biological iron carrier, deprivation of transferrin to encapsulated cells may limit long term function and viability in vivo.

scholarly journals Applications of High Diffusion Resistance Multi‐component AlCrTaTiZrRu/(AlCrTaTiZrRu)N 0.7 Film in Cu Interconnects

2020 ◽  
Vol 22 (11) ◽  
pp. 2000557
Author(s):  
Rongbin Li ◽  
Tongtong Chen ◽  
Chunxia Jiang ◽  
Jing Zhang ◽  
Yong Zhang ◽  
...  
Keyword(s):  
Diffusion Resistance ◽  
Cu Interconnects ◽  
High Diffusion

Multi-component AlCrTaTiZrMo-nitride film with high diffusion resistance in copper metallization

2018 ◽  
Vol 748 ◽  
pp. 258-264 ◽  
Author(s):  
Rongbin Li ◽  
Bangwei Qiao ◽  
Hailong Shang ◽  
Jing Zhang ◽  
Chunxia Jiang ◽  
...  
Keyword(s):  
Copper Metallization ◽  
Nitride Film ◽  
Diffusion Resistance ◽  
High Diffusion

Characteristics of a 10nm-thick (TiVCr)N multi-component diffusion barrier layer with high diffusion resistance for Cu interconnects

2011 ◽  
Vol 205 (21-22) ◽  
pp. 5064-5067 ◽  
Author(s):  
Du-Cheng Tsai ◽  
Yen-Lin Huang ◽  
Sheng-Ru Lin ◽  
De-Ru Jung ◽  
Shou-Yi Chang ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Diffusion Barrier ◽  
Diffusion Resistance ◽  
Cu Interconnects ◽  
High Diffusion ◽  
Diffusion Barrier Layer

5 nm-Thick (AlCrTaTiZrRu)N0.5 Multi-Component Barrier Layer with High Diffusion Resistance for Cu Interconnects

2011 ◽  
Vol 3 (2) ◽  
pp. 289-293 ◽  
Author(s):  
Shou-Yi Chang ◽  
Chen-Yuan Wang ◽  
Chen-En Li ◽  
Yi-Chung Huang
Keyword(s):  
Barrier Layer ◽  
Diffusion Resistance ◽  
Cu Interconnects ◽  
High Diffusion

Analytical electron microscopy of grain boundaries in Al-Cu metallizations

1992 ◽  
Vol 50 (2) ◽  
pp. 1684-1685
Author(s):  
J. R. Michael ◽  
A. D. Romig ◽  
D. R. Frear
Keyword(s):  
Electron Microscopy ◽  
Integrated Circuits ◽  
Failure Mode ◽  
Current Density ◽  
Thermal History ◽  
Analytical Electron Microscopy ◽  
Cu Metallization ◽  
Analytical Electron ◽  
Interconnect Lines

Al with additions of Cu is commonly used as the conductor metallizations for integrated circuits, the Cu being added since it improves resistance to electromigration failure. As linewidths decrease to submicrometer dimensions, the current density carried by the interconnect increases dramatically and the probability of electromigration failure increases. To increase the robustness of the interconnect lines to this failure mode, an understanding of the mechanism by which Cu improves resistance to electromigration is needed. A number of theories have been proposed to account for role of Cu on electromigration behavior and many of the theories are dependent of the elemental Cu distribution in the interconnect line. However, there is an incomplete understanding of the distribution of Cu within the Al interconnect as a function of thermal history. In order to understand the role of Cu in reducing electromigration failures better, it is important to characterize the Cu distribution within the microstructure of the Al-Cu metallization.

EIS study of the corrosion behavior of an organic coating applied on Algerian oil tanker

2020 ◽  
Vol 117 (6) ◽  
pp. 610
Author(s):  
Nadia Hammouda ◽  
Kamel Belmokre
Keyword(s):  
Corrosion Protection ◽  
Electrochemical Impedance ◽  
Paint Film ◽  
Organic Coating ◽  
Diffusion Resistance ◽  
Double Layer Capacitance ◽  
Carbon Steel Surface ◽  
Chloride Environment ◽  
Oil Tanker ◽  
Epoxy Paint

Organic coatings are widely employed in the corrosion protection of most metal surfaces, particularly steel. They provide a barrier against corrosive species present in the environment, due to their high resistance to oxygen, water and ions transport. This study focuses on the evaluation of corrosion protection performance of epoxy paint on the carbon steel surface in chloride environment (3% NaCl) by Electrochemical Impedance Spectroscopy (EIS). The electrochemical behavior of painted surface was estimated by EIS parameters that contained paint film resistance, paint film capacitance and double layer capacitance. On the basis of calculation using EIS spectrums it was observed that pore resistance (Rpore) decreased with the appearance of doubled layer capacitance (Cdl) due to the electrolyte penetration through the film. This was further confirmed by the decrease of diffusion resistance (Rd) which was also the indicator of the deterioration of paint film protectiveness. Microscopic analyses have shown that oxidation dominates the corroded surfaces.

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