Analysis of the electrical properties and current transportation mechanism of a metal oxide semiconductor (MOS) capacitor based on HfGdO gate dielectrics

2018 ◽  
Vol 757 ◽  
pp. 288-297 ◽  
Author(s):  
S.S. Jiang ◽  
G. He ◽  
Z.B. Fang ◽  
P.H. Wang ◽  
Y.M. Liu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Gate Dielectrics ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mos Capacitor

Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

2008 ◽  
Vol 103 (1) ◽  
pp. 014506 ◽  
Author(s):  
G. Mavrou ◽  
S. Galata ◽  
P. Tsipas ◽  
A. Sotiropoulos ◽  
Y. Panayiotatos ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Gate Dielectrics ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Device with TiOxNy High-k Gate Dielectrics

2019 ◽  
Vol 35 (3) ◽  
pp. 325-332 ◽  
Author(s):  
T. Das ◽  
Chandreswar Mahata ◽  
G Sutradhar ◽  
P K Bose ◽  
C.K. Maiti
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Semiconductor Device ◽  
Gate Dielectrics ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High K

scholarly journals Interface chemistry and leakage current mechanism of HfGdON/Ge gate stack modulated by ALD-driven interlayer

RSC Advances ◽  
2019 ◽  
Vol 9 (58) ◽  
pp. 33800-33805
Author(s):  
Gang He ◽  
Die Wang ◽  
Rui Ma ◽  
Mao Liu ◽  
Jingbiao Cui
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Stacks ◽  
Interface Chemistry ◽  
Mos Capacitor ◽  
Passivation Treatment ◽  
Leakage Current Mechanism ◽  
Current Mechanism

In the current manuscript, a Ge metal-oxide-semiconductor (MOS) capacitor based on HfGdON/Ge gate stacks with an ALD-driven passivation layer has been fabricated, and its interfacial and electrical properties are compared with those of its counterparts that have not undergone passivation treatment.

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