Interface chemistry and leakage current mechanism of HfGdON/Ge gate stack modulated by ALD-driven interlayer

RSC Advances ◽

10.1039/c9ra07369h ◽

2019 ◽

Vol 9 (58) ◽

pp. 33800-33805

Author(s):

Gang He ◽

Die Wang ◽

Rui Ma ◽

Mao Liu ◽

Jingbiao Cui

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Interface Chemistry ◽

Mos Capacitor ◽

Passivation Treatment ◽

Leakage Current Mechanism ◽

Current Mechanism

In the current manuscript, a Ge metal-oxide-semiconductor (MOS) capacitor based on HfGdON/Ge gate stacks with an ALD-driven passivation layer has been fabricated, and its interfacial and electrical properties are compared with those of its counterparts that have not undergone passivation treatment.

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Analysis of the electrical properties and current transportation mechanism of a metal oxide semiconductor (MOS) capacitor based on HfGdO gate dielectrics

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2018.05.091 ◽

2018 ◽

Vol 757 ◽

pp. 288-297 ◽

Author(s):

S.S. Jiang ◽

G. He ◽

Z.B. Fang ◽

P.H. Wang ◽

Y.M. Liu ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Study on leakage current mechanism and band offset of high-k/n-InAlAs metal-oxide-semiconductor capacitors with HfO2 and HfAlO dielectric

Thin Solid Films ◽

10.1016/j.tsf.2018.07.009 ◽

2018 ◽

Vol 661 ◽

pp. 137-142 ◽

Author(s):

He Guan ◽

Hongliang Lv

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Band Offset ◽

High K ◽

Leakage Current Mechanism ◽

Current Mechanism

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Electrical properties of Ge metal–oxide–semiconductor capacitors with high-kLa2O3gate dielectric incorporated by N or/and Ti

Journal of Semiconductors ◽

10.1088/1674-4926/37/6/064006 ◽

2016 ◽

Vol 37 (6) ◽

pp. 064006

Author(s):

Xu Huoxi ◽

Xu Jingping

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Improved Electrical Properties and Reliability of GaAs Metal-Oxide-Semiconductor Capacitor by Using LaAlON Passivation Layer

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201700180 ◽

2017 ◽

Vol 11 (9) ◽

pp. 1700180 ◽

Author(s):

Li Ning Liu ◽

Hoi Wai Choi ◽

Jing Ping Xu ◽

Pui To Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

Electrochemical and Solid-State Letters ◽

10.1149/1.3559770 ◽

2011 ◽

Vol 14 (5) ◽

pp. G27 ◽

Author(s):

Qi Xie ◽

Jan Musschoot ◽

Marc Schaekers ◽

Matty Caymax ◽

Annelies Delabie ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Layer Deposition

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Hot Carrier ◽

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Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited SixNy

Materials Science Forum - Silicon Carbide and Related Materials 2006 ◽

10.4028/0-87849-442-1.647 ◽

2007 ◽

pp. 647-650

Author(s):

Jeong Hyun Moon ◽

Dong Hwan Kim ◽

Ho Keun Song ◽

Jeong Hyuk Yim ◽

Wook Bahng ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices

Semiconductor Science and Technology ◽

10.1088/1361-6641/aafc65 ◽

2019 ◽

Vol 34 (3) ◽

pp. 035027 ◽

Author(s):

Lu Liu ◽

Hanhan Lu ◽

Jingping Xu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Correlations between structural and electrical properties of nitrided SiOx thin films used as power metal oxide semiconductor field effect transistor gate dielectric

Applied Physics Letters ◽

10.1063/1.3021404 ◽

2008 ◽

Vol 93 (18) ◽

pp. 182109

Author(s):

E. Fazio ◽

F. Neri ◽

G. Curró M. Camalleri ◽

D. Calí

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Structural And Electrical Properties ◽

Effect Transistor

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Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks

Applied Physics Letters ◽

10.1063/1.4773914 ◽

2013 ◽

Vol 102 (1) ◽

pp. 012106 ◽

Author(s):

Szu-Han Ho ◽

Ting-Chang Chang ◽

Bin-Wei Wang ◽

Ying-Shin Lu ◽

Wen-Hung Lo ◽

...

Keyword(s):

Metal Oxide ◽

High Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

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