Effects of fluorine incorporation into HfO2 gate dielectrics on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.3457388 ◽

2010 ◽

Vol 96 (25) ◽

pp. 253502 ◽

Author(s):

Yen-Ting Chen ◽

Han Zhao ◽

Yanzhen Wang ◽

Fei Xue ◽

Fei Zhou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Journal of Electronic Materials ◽

10.1007/s11664-004-0220-9 ◽

2004 ◽

Vol 33 (8) ◽

pp. 912-915 ◽

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

H. -J. L. Gossmann ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition

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Self-aligned inversion-channel In0.75Ga0.25As metal–oxide–semiconductor field-effect-transistors using UHV-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics

Solid-State Electronics ◽

10.1016/j.sse.2010.04.033 ◽

2010 ◽

Vol 54 (9) ◽

pp. 919-924 ◽

Author(s):

T.D. Lin ◽

H.C. Chiu ◽

P. Chang ◽

Y.H. Chang ◽

Y.D. Wu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Vox/Eox-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.7 ◽

2007 ◽

Vol 46 (1) ◽

pp. 7-13 ◽

Author(s):

Shimpei Tsujikawa ◽

Katsuya Shiga ◽

Hiroshi Umeda ◽

Jiro Yugami

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Low Voltage ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Transconductance degradation and interface state generation in metal‐oxide‐semiconductor field‐effect transistors with oxynitride gate dielectrics under hot‐carrier stress

Applied Physics Letters ◽

10.1063/1.102819 ◽

1990 ◽

Vol 56 (3) ◽

pp. 250-252 ◽

Author(s):

G. Q. Lo ◽

W. C. Ting ◽

D. K. Shih ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress ◽

State Generation

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Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics

Applied Physics Letters ◽

10.1063/1.4813829 ◽

2013 ◽

Vol 103 (3) ◽

pp. 033502 ◽

Author(s):

Yuya Minoura ◽

Atsushi Kasuya ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Interfaces ◽

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The role of Si orientation and temperature on the carrier mobility in metal oxide semiconductor field-effect transistors with ultrathin HfO2 gate dielectrics

Journal of Applied Physics ◽

10.1063/1.2210627 ◽

2006 ◽

Vol 100 (1) ◽

pp. 014504 ◽

Author(s):

B. Mereu ◽

C. Rossel ◽

E. P. Gusev ◽

M. Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Carrier Mobility ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Fabrication of metal–oxide–semiconductor field-effect transistors using crystalline γ‐Al2O3 films as the gate dielectrics

Applied Physics Letters ◽

10.1063/1.1826228 ◽

2004 ◽

Vol 85 (21) ◽

pp. 5004-5006 ◽

Author(s):

Takayuki Okada ◽

Kazuaki Sawada ◽

Makoto Ishida ◽

Mohammad Shahjahan

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p-metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1320847 ◽

2000 ◽

Vol 77 (18) ◽

pp. 2855-2857 ◽

Author(s):

Anri Nakajima ◽

Takashi Yoshimoto ◽

Toshiro Kidera ◽

Katsunori Obata ◽

Shin Yokoyama ◽

...

Keyword(s):

Silicon Nitride ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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dc and rf characteristics of self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3(Gd2O3) as gate dielectrics

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3276442 ◽

2010 ◽

Vol 28 (3) ◽

pp. C3H14-C3H17 ◽

Author(s):

T. D. Lin ◽

P. Chang ◽

H. C. Chiu ◽

M. Hong ◽

J. Kwo ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Bulk and interface trap generation under negative bias temperature instability stress of p-channel metal-oxide-semiconductor field-effect transistors with nitrogen and silicon incorporated HfO2 gate dielectrics

Applied Physics Letters ◽

10.1063/1.3541879 ◽

2011 ◽

Vol 98 (6) ◽

pp. 063504 ◽

Author(s):

Changhwan Choi ◽

Jack C. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Bias Temperature Instability

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