Existence of bipolar and unipolar resistive switching in CaZrO3 thin film device

2021 ◽  
Vol 859 ◽  
pp. 158373
Author(s):  
M. Asif ◽  
Ashok Kumar
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Thin Film Device ◽  
Unipolar Resistive Switching

Promising Bipolar and Unipolar Resistive Switching in Ti-Doped Yb2O3 Thin Film

2012 ◽  
Author(s):  
S. Mondal ◽  
F. H. Chen ◽  
C. W. Wang ◽  
J. L. Her ◽  
Y. H. Matsuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Unipolar Resistive Switching

Reproducible unipolar resistive switching behaviors in the metal-deficient CoOx thin film

2010 ◽  
Vol 518 (22) ◽  
pp. 6437-6440 ◽  
Author(s):  
June Sik Kwak ◽  
Young Ho Do ◽  
Yoon Cheol Bae ◽  
Hyunsik Im ◽  
Jin Pyo Hong
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Unipolar Resistive Switching

Thermal effects on resistive switching in manganite–silicon thin film device

2021 ◽  
Vol 44 (1) ◽  
Author(s):  
Amiras Donga ◽  
K N Rathod ◽  
Keval Gadani ◽  
Davit Dhruv ◽  
V G Shrimali ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Thermal Effects ◽  
Silicon Thin Film ◽  
Thin Film Device

scholarly journals Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

2012 ◽  
Vol 152 (17) ◽  
pp. 1630-1634 ◽  
Author(s):  
Feng Zhang ◽  
Xiaomin Li ◽  
Xiangdong Gao ◽  
Liang Wu ◽  
Fuwei Zhuge ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Defect Content ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

Improvement of Unipolar Resistive Switching Characteristics in Ti Embedded ZrO2 Thin Film

2014 ◽  
Vol 543-547 ◽  
pp. 3839-3842 ◽  
Author(s):  
Chun Yang Huang ◽  
Umesh Chand ◽  
Tseung Yuen Tseng
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Retention Test ◽  
Oxygen Vacancies ◽  
Negative Voltage ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

Due to the electrical and physical analyses, the robust negative voltage unipolar resistive switching behaviors in Ti/ZrO2/Ti/ZrO2/Pt device have been investigated. The Ti diffusion in ZrO2 film can generate more amounts of oxygen vacancies in it, which leads the lower value and narrower variation in forming voltage. Moreover, the good performances with more than 1000 switching cycles and long retention test can be achieved in the present device.

Influence of Shape Change Caused by Warp of Thin-film Device on Solar Radiation Pressure Torque in Solar Sail

2020 ◽  
Vol 19 (0) ◽  
pp. 101-110
Author(s):  
Rikushi KATO ◽  
Masanori MATSUSHITA ◽  
Hideyuki TAKAHASHI ◽  
Osamu MORI ◽  
Nobukatsu OKUIZUMI ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Radiation ◽  
Radiation Pressure ◽  
Shape Change ◽  
Solar Radiation Pressure ◽  
Solar Sail ◽  
Thin Film Device

Effect of Curved Thin-film Device on Natural Frequency of Rectangle Membrane under Uniaxial Tension

2019 ◽  
Vol 18 (0) ◽  
pp. 73-80 ◽  
Author(s):  
Masanori MATSUSHITA ◽  
Nobukatsu OKUIZUMI ◽  
Yasutaka SATOU ◽  
Osamu MORI ◽  
Takashi IWASA ◽  
...  
Keyword(s):  
Thin Film ◽  
Uniaxial Tension ◽  
Natural Frequency ◽  
Thin Film Device

scholarly journals High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Growth Temperature ◽  
High Performance ◽  
20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

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