Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin film memories and their switching mechanism

2012 ◽  
Vol 111 (1) ◽  
pp. 014505 ◽  
Author(s):  
Ming-Chi Wu ◽  
Tsung-Han Wu ◽  
Tseung-Yuen Tseng
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Switching Mechanism ◽  
Zro2 Thin Film ◽  
Unipolar Resistive Switching

Bipolar resistive switching behavior and conduction mechanisms of composite nanostructured TiO2/ZrO2 thin film

2020 ◽  
Vol 46 (13) ◽  
pp. 21196-21201 ◽  
Author(s):  
Hui-Chuan Liu ◽  
Xin-Gui Tang ◽  
Qiu-Xiang Liu ◽  
Yan-Ping Jiang ◽  
Wen-Hua Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Nanostructured Tio2 ◽  
Zro2 Thin Film ◽  
Conduction Mechanisms

Promising Bipolar and Unipolar Resistive Switching in Ti-Doped Yb2O3 Thin Film

2012 ◽  
Author(s):  
S. Mondal ◽  
F. H. Chen ◽  
C. W. Wang ◽  
J. L. Her ◽  
Y. H. Matsuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Unipolar Resistive Switching

Reproducible unipolar resistive switching behaviors in the metal-deficient CoOx thin film

2010 ◽  
Vol 518 (22) ◽  
pp. 6437-6440 ◽  
Author(s):  
June Sik Kwak ◽  
Young Ho Do ◽  
Yoon Cheol Bae ◽  
Hyunsik Im ◽  
Jin Pyo Hong
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Unipolar Resistive Switching

Unipolar resistive switching mechanism speculated from irreversible low resistance state of Cu2O films

2011 ◽  
Vol 99 (5) ◽  
pp. 052105 ◽  
Author(s):  
Sahwan Hong ◽  
Deng Xiao Long ◽  
Inrok Hwang ◽  
Jin-Soo Kim ◽  
Yun Chang Park ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Low Resistance ◽  
Switching Mechanism ◽  
Resistance State ◽  
Cu2o Films ◽  
Unipolar Resistive Switching ◽  
Resistive Switching Mechanism

scholarly journals Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

2012 ◽  
Vol 152 (17) ◽  
pp. 1630-1634 ◽  
Author(s):  
Feng Zhang ◽  
Xiaomin Li ◽  
Xiangdong Gao ◽  
Liang Wu ◽  
Fuwei Zhuge ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Defect Content ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

Improvement of Unipolar Resistive Switching Characteristics in Ti Embedded ZrO2 Thin Film

2014 ◽  
Vol 543-547 ◽  
pp. 3839-3842 ◽  
Author(s):  
Chun Yang Huang ◽  
Umesh Chand ◽  
Tseung Yuen Tseng
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Retention Test ◽  
Oxygen Vacancies ◽  
Negative Voltage ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

Due to the electrical and physical analyses, the robust negative voltage unipolar resistive switching behaviors in Ti/ZrO2/Ti/ZrO2/Pt device have been investigated. The Ti diffusion in ZrO2 film can generate more amounts of oxygen vacancies in it, which leads the lower value and narrower variation in forming voltage. Moreover, the good performances with more than 1000 switching cycles and long retention test can be achieved in the present device.

scholarly journals High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Growth Temperature ◽  
High Performance ◽  
20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

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