Improvement of Unipolar Resistive Switching Characteristics in Ti Embedded ZrO2 Thin Film

2014 ◽  
Vol 543-547 ◽  
pp. 3839-3842 ◽  
Author(s):  
Chun Yang Huang ◽  
Umesh Chand ◽  
Tseung Yuen Tseng
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Retention Test ◽  
Oxygen Vacancies ◽  
Negative Voltage ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

Due to the electrical and physical analyses, the robust negative voltage unipolar resistive switching behaviors in Ti/ZrO2/Ti/ZrO2/Pt device have been investigated. The Ti diffusion in ZrO2 film can generate more amounts of oxygen vacancies in it, which leads the lower value and narrower variation in forming voltage. Moreover, the good performances with more than 1000 switching cycles and long retention test can be achieved in the present device.

scholarly journals Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

2012 ◽  
Vol 152 (17) ◽  
pp. 1630-1634 ◽  
Author(s):  
Feng Zhang ◽  
Xiaomin Li ◽  
Xiangdong Gao ◽  
Liang Wu ◽  
Fuwei Zhuge ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Defect Content ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics

2011 ◽  
Vol 520 (4) ◽  
pp. 1246-1250 ◽  
Author(s):  
Kou-Chen Liu ◽  
Wen-Hsien Tzeng ◽  
Kow-Ming Chang ◽  
Jiun-Jie Huang ◽  
Yun-Ju Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Resistive Switching ◽  
Film Properties ◽  
Switching Characteristics

Unipolar resistive switching characteristics of room temperature grown SnO2 thin films

2009 ◽  
Vol 94 (24) ◽  
pp. 242902 ◽  
Author(s):  
Kazuki Nagashima ◽  
Takeshi Yanagida ◽  
Keisuke Oka ◽  
Tomoji Kawai
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Room Temperature ◽  
Sno2 Thin Films ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

Influence of Bias-Induced Copper Diffusion on the Resistive Switching Characteristics of a SiON Thin Film

2011 ◽  
Vol 14 (2) ◽  
pp. H93 ◽  
Author(s):  
Po-Chun Yang ◽  
Ting-Chang Chang ◽  
Shih-Ching Chen ◽  
Yu-Shih Lin ◽  
Hui-Chun Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Copper Diffusion ◽  
Switching Characteristics

Promising Bipolar and Unipolar Resistive Switching in Ti-Doped Yb2O3 Thin Film

2012 ◽  
Author(s):  
S. Mondal ◽  
F. H. Chen ◽  
C. W. Wang ◽  
J. L. Her ◽  
Y. H. Matsuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Unipolar Resistive Switching

Reproducible unipolar resistive switching behaviors in the metal-deficient CoOx thin film

2010 ◽  
Vol 518 (22) ◽  
pp. 6437-6440 ◽  
Author(s):  
June Sik Kwak ◽  
Young Ho Do ◽  
Yoon Cheol Bae ◽  
Hyunsik Im ◽  
Jin Pyo Hong
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Unipolar Resistive Switching
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