Dependence of the photoelectric performance of the CVD-grown 2D WS2 on the oxygen-doping concentration

2021 ◽  
pp. 162705
Author(s):  
Jiaying Jian ◽  
Yaxin Nan ◽  
Pengfan Dong ◽  
Hao Feng ◽  
Kangnian Zuo ◽  
...  
RSC Advances ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 5204-5217
Author(s):  
Jiaying Jian ◽  
Honglong Chang ◽  
Pengfan Dong ◽  
Zewen Bai ◽  
Kangnian Zuo

The CVD-grown 2D MoS2 is the oxygen-doped MoS2. Annealing treatment can increase the O-doping concentration in the CVD-grown 2D MoS2 while vulcanization can make the CVD-grown 2D MoS2 transition from the an oxygen-doped state to the a pure state.


1996 ◽  
Vol 6 (12) ◽  
pp. 2265-2273 ◽  
Author(s):  
I. F. Schegolev ◽  
N. N. Kolesnikov ◽  
V. N. Kopylov ◽  
T. G. Togonidze ◽  
O. M. Vyaselev
Keyword(s):  

2020 ◽  
Author(s):  
Zeyu Liu ◽  
Shugui Hua ◽  
Tian Lu ◽  
Ziqi Tian

Inspired by a previous experimental study on the first-order hyperpolarizabilities of 1,3-thiazolium-5-thiolates mesoionic compounds using Hyper-Rayleigh scattering technique, we theoretically investigated the UV-Vis absorption spectra and every order polarizabilities of these mesoionic molecules. Based on the fact that the photophysical and nonlinear properties observed in the experiment can be perfectly replicated, our theoretical calculations explored the essential characteristics of the optical properties of the mesoionic compounds with different electron-donating groups at the level of electronic structures through various wave function analysis methods. The influence of the electron-donating ability of the donor on the optical properties of the molecules and the contribution of the mesoionic ring moiety to their optical nonlinearity are clarified, which have not been reported by any research so far. This work will help people understand the nature of optical properties of mesoionic-based molecules and provide guidance for the rational design of molecules with excellent photoelectric performance in the future.


2019 ◽  
Vol 61 (7) ◽  
pp. 685-689 ◽  
Author(s):  
Özden Aslan Çataltepe ◽  
Zeynep Güven Özdemir ◽  
Mehmet Kılıç ◽  
Ülker Onbaşlı

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.


2019 ◽  
Vol 46 (10) ◽  
pp. 1485-1493 ◽  
Author(s):  
Fatemeh Jahanbakhsh ◽  
Alexander Lorenz

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