Deposition of the tin sulfide thin films using ALD and a vacuum annealing process for tuning the phase transition

2021 ◽  
pp. 162806
Author(s):  
Yeonsik Choi ◽  
Hyunwoo Park ◽  
Namgue Lee ◽  
Byunguk Kim ◽  
Junghoon Lee ◽  
...  
2017 ◽  
Vol 751 ◽  
pp. 113-118
Author(s):  
Intira Nualkham ◽  
Rachsak Sakdanuphab ◽  
Aparporn Sakulkalavek

In this study, CrNx thin films were prepared on 304 stainless steel substrate by DC reactive magnetron sputtering technique. Different N2 gas partial pressure from 10 to 30% was employed in the sputtering process while sputtering power, sputtering pressure and total film thickness were kept constant. In order to improve structural, morphological, and mechanical properties, vacuum annealing process was adopted on the CrNx thin films at the temperature of 400 oC. The standard characterization techniques such as X-ray diffraction, scanning electron microscope, atomic force microscope and hardness (load force of HV0.1) were used to reveal the properties of as-deposited and annealing films. The as-deposited films show two-phase crystal structure of Cr2N and CrN depending on N2 gas partial pressure. After the annealing process, the films effectively enhance the crystal structure and found the phases change from Cr2N to CrN for the film deposited at low N2 partial pressure. The surface roughness of the films was between 5 - 20 nm, and as expected the annealing films shows smoother surface than the as-deposited films. Hardness of the CrNx films is in the range of 7 to 10 GPa. The mechanism of improvement in structural and mechanical properties of annealing films is introduced based on strain relaxation.


1999 ◽  
Vol 572 ◽  
Author(s):  
Jipo Huang ◽  
Lianwei Wang ◽  
Jun Wen ◽  
Yuxia Wang ◽  
Chenglu Lin ◽  
...  

ABSTRACTCrystalline 3C-SiC thin films were successfully grown on (100) and (111) Si substrates by using ArF pulsed laser ablation from a SiC ceramic target combined with a vacuum annealing process. X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) were employed to study the effect of annealing on the structure of thin films deposited at 800°C. It was demonstrated that vacuum annealing could transform the amorphous SiC films into crystalline phase and that the crystallinity was strongly dependent on the annealing temperature. For the samples deposited on (100) and (111) Si, the optimum annealing temperatures were 980 and 920°C, respectively. Scanning electron microscope (SEM) micrographs exhibited different characteristic microstructure for the (100) and (111) Si cases, similar to that observed for the carbonization layer initially formed in chemical vapor deposition of SiC films on Si. This also showed the presence of the epitaxial relationship of 3C-SiC[100]//Si[100] and 3C-SiC[111]//Si[111] in the direction of growth.


2017 ◽  
Vol 1 (6) ◽  
Author(s):  
S. Cervera ◽  
M. Trassinelli ◽  
M. Marangolo ◽  
C. Carrétéro ◽  
V. Garcia ◽  
...  

Author(s):  
Yechao Ling ◽  
Yong Hu ◽  
Haobo Wang ◽  
Ben Niu ◽  
Jiawei Chen ◽  
...  

2010 ◽  
Vol 108 (2) ◽  
pp. 024506 ◽  
Author(s):  
Ki-Ho Song ◽  
Seung-Cheol Beak ◽  
Hyun-Yong Lee

2021 ◽  
pp. 111114
Author(s):  
Hei Man Yau ◽  
Xinxin Chen ◽  
Chi Man Wong ◽  
Deyang Chen ◽  
Jiyan Dai

Optik ◽  
2020 ◽  
Vol 206 ◽  
pp. 163435
Author(s):  
K. Mahmood ◽  
Jolly Jacob ◽  
M. Ibrahim ◽  
A. Ail ◽  
N. Amin ◽  
...  

2017 ◽  
Vol 186 ◽  
pp. 198-201 ◽  
Author(s):  
Benlong Guo ◽  
Hongmei Deng ◽  
Xuezhen Zhai ◽  
Wenliang Zhou ◽  
Xiankuan Meng ◽  
...  

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