The influence of annealing temperature on the interface and photovoltaic properties of CdS/CdSe quantum dots sensitized ZnO nanorods solar cells

Large area rutile TiO2nanorod arrays were grown on F:SnO2(FTO) conductive glass using a hydrothermal method at low temperature. CdSe quantum dots (QDs) were deposited onto single-crystalline TiO2nanorod arrays by a chemical bath deposition (CBD) method to make a photoelectrode. The solar cell was assembled using a CdSe-TiO2nanostructure as the photoanode and polysulfide solution as the electrolyte. The annealing effect on optical and photovoltaic properties of CdSe quantum-dots-sensitized TiO2nanorod solar cells was studied systematically. A significant change of the morphology and a regular red shift of band gap of CdSe nanoparticles were observed after annealing treatment. At the same time, an improved photovoltaic performance was obtained for quantum-dots-sensitized solar cell using the annealed CdSe-TiO2nanostructure electrode. The power conversion efficiency improved from 0.59% to 1.45% as a consequence of the annealing effect. This improvement can be explained by considering the changes in the morphology, the crystalline quality, and the optical properties caused by annealing treatment.

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Influence of Surface Treatment and Annealing Temperature on the Recombination Processes of the Quantum Dots Solar Cells

Journal of Nanomaterials ◽

10.1155/2016/9806386 ◽

2016 ◽

Vol 2016 ◽

pp. 1-9 ◽

Cited By ~ 3

Author(s):

Tung Ha Thanh ◽

Vinh Lam Quang ◽

Huynh Thanh Dat

Keyword(s):

Quantum Dots ◽

Solar Cells ◽

Surface Treatment ◽

Current Density ◽

Annealing Temperature ◽

Cdse Quantum Dots ◽

Temperature Conditions ◽

Recombination Processes

We have studied the effect of the surface treatment of the CdS/CdSe quantum dots (QDs) by passivation ZnS layers and annealing temperature on the recombination resistance of the quantum dots solar cells (QDSSCs) based on TiO2/CdS/CdSe/ZnS photoanodes. The recombination resistance at TiO2/QDs contact and in TiO2 film decreased when the QDs were added to the passivation ZnS layers. Furthermore, we used the F− ions linker and found the best annealing temperature conditions to reduce the recombination resistance of the QDSSCs. As a result, the current density increased from 7.85 mA/cm2 to 14 mA/cm2.

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Optimization of CdS/CdSe quantum dots solar cells based on electrochemically grown ZnO nanorods

Journal of Photonics for Energy ◽

10.1117/1.jpe.8.044001 ◽

2018 ◽

Vol 8 (04) ◽

pp. 1 ◽

Cited By ~ 1

Author(s):

Isabela de Castro Corteletti Lawrence Rocha ◽

André Felipe Vale da Fonseca ◽

Renato Luiz Siqueira ◽

Jefferson Luis Ferrari ◽

Ellen Raphael ◽

...

Keyword(s):

Quantum Dots ◽

Solar Cells ◽

Zno Nanorods ◽

Cdse Quantum Dots

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Anisotropic Nanostructure ZnO Photoelectrodes for CdS/CdSe Quantum Dot Sensitized Solar Cells

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.873.556 ◽

2013 ◽

Vol 873 ◽

pp. 556-561

Author(s):

Jian Jun Tian

Keyword(s):

Quantum Dots ◽

Solar Cells ◽

Quantum Dot ◽

Chemical Bath Deposition ◽

Cdse Quantum Dots ◽

Silar Method ◽

Nanorods Array ◽

Cdse Quantum Dot ◽

Cbd Method ◽

Sensitized Solar Cells

CdS/CdSe quantum dots co-sensitized solar cells (QDSCs) were prepared by combining the successive ion layer absorption and reaction (SILAR) method and chemical bath deposition (CBD) method for the fabrication of CdS and CdSe quantum dots, respectively. In this work, we designed anisotropic nanostructure ZnO photoelectrodes, such as nanorods/nanosheets and nanorods array, for CdS/CdSe quantum dots co-sensitized solar cells. Our study revealed that the performance of QDSCs could be improved by modifying surface of ZnO to increase the loading of quantum dots and reduce the charge recombination.

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