Facile growth of a Sb2Se3 nanorods array induced by a MoSe2 interlayer and its application to 3D p-n junction solar cells

A uniformly grown Sb2Se3 nanorods array, with the introduction of a MoSe2 interlayer, obtained by a co-evaporation process and its application to three-dimensional (3D) p-n junction high-efficiency Sb2Se3 solar cells...

Growth of Multidimensional Zinc Oxide Nanorods Array for Enhanced UV Photoresponsivity

Ultraviolet (UV) photosensitive device was fabricated using ZnO nanorod array on substrate with copper electrodes. Facile open aqueous solution deposition technique was used to grow the ZnO nanorods forming an electrical bridge between copper electrodes. Powder X-ray diffraction patterns was used to confirm the polycrystalline wurtzite ZnO phase and scanning electron microscopy (SEM) techniques was employed to characterize the growth morphology of ZnO nanorods. A current-voltage (I-V) characterization in the dark exhibits the back-to-back diode characteristics. In the presence of ultraviolet (UV) radiation, enhanced photo-response was reported wherein photocurrent increases by two orders of magnitude at 2 V bias. This enhancement is mainly due to lateral interfacial contacts between neighboring grain-boundary of the nanorods arrays.

Growth of ZnO nanorods array on PCB for enhanced UV photosensors

Ultraviolet (UV) photosensitive device is fabricated using ZnO nanorods array on commercially available printed circuit board (PCB). Facile open aqueous solution deposition (OASD) method is used to deposit ZnO nanorods array in a trenched region between closely spaced Cu-electrodes. X-ray diffraction (XRD) patterns confirm the wurtzite phase of ZnO nanorods arrays and scanning electron microscopy (SEM) characterizes the multidimensional growth of ZnO nanorods across the trenched part of PCB. The current-voltage (I-V) characteristics of the device in dark is analogous to the back-to-back diode behaviour. However, the device exhibits an excellent photoresponsivity wherein the photocurrent value increases by two orders of magnitude at 2 V bias under the illumination ultraviolet (UV wavelength  ~ 254 nm) light source. The enhancement in photocurrent is mainly due to formation of multiple contacts between neighbouring grain-boundaries of the nanorods arrays extending to the Cu-electrodes. The prototype optoelectronic device displays almost four-times increment in the UV photocurrent at 5 V external bias potential.