Flux-mediated epitaxy: general application in vapor phase epitaxy to single crystal quality of complex oxide films

2005 ◽  
Vol 275 (1-2) ◽  
pp. 325-330 ◽  
Author(s):  
Y. Matsumoto ◽  
R. Takahashi ◽  
H. Koinuma
Keyword(s):  
Single Crystal ◽  
Vapor Phase ◽  
Oxide Films ◽  
Complex Oxide ◽  
Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
General Application ◽  
Complex Oxide Films

Effects of the group V/III ratio and a gan inter-layer on the crystal quality of InN grown by using the hydride vapor-phase epitaxy method

2015 ◽  
Vol 66 (6) ◽  
pp. 994-1000
Author(s):  
Ju-Hyung Ha ◽  
Juan Wang ◽  
Won-Jae Lee ◽  
Young-Jun Choi ◽  
Hae-Yong Lee ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Group V

Effects of Growth Temperatures on Crystal Quality of GaN by Vapor Phase Epitaxy Using GaCl3and NH3

2011 ◽  
Vol 50 (8R) ◽  
pp. 085501
Author(s):  
Tetsuzo Ueda ◽  
Masaaki Yuri ◽  
James S. Harris, Jr.
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Crystal Quality

Improvement of Crystal Quality of n-AlGaN by Alternate-Source-Feeding Metal Organic Vapor Phase Epitaxy

2007 ◽  
Vol 46 (9A) ◽  
pp. 5711-5714 ◽  
Author(s):  
Ken-ichi Isono ◽  
Eiichiro Niikura ◽  
Koichi Murakawa ◽  
Fumio Hasegawa ◽  
Hideo Kawanishi
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Organic Vapor ◽  
Metal Organic ◽  
Alternate Source

Crystal Quality and Surface Morphology Improvement of Movpe-Grown GaAs-on-Si Using Tertiarybutylarsine

1992 ◽  
Vol 281 ◽  
Author(s):  
S. MIYAGAKI ◽  
S. Ohkubo ◽  
K. Takai ◽  
N. Takagi ◽  
M. Kimura ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Layer Growth ◽  
Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Si Substrate ◽  
Gaas Films

ABSTRACTWe developed GaAs heteroepitaxy on a Si substrate by metalorganic vapor phase epitaxy (MOVPE) using tertiarybutylarsine (TBAs). In buffer layer growth at 450°C, the surface morphology and crystal quality of TBAs-grown films were slightly inferior to those of AsH3-grown films. At buffer layer growth below 400°C, the quality of TBAs-grown films improved. The GaAs films we grew using TBAs had a better quality than those grown using AsH2.

Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy

2012 ◽  
Vol 10 (3) ◽  
pp. 369-372 ◽  
Author(s):  
Koji Okuno ◽  
Takahide Oshio ◽  
Naoki Shibata ◽  
Yoshio Honda ◽  
Masahito Yamaguchi ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Structural Evolution ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Aln Buffer

scholarly journals Percolation via Combined Electrostatic and Chemical Doping in Complex Oxide Films

2017 ◽  
Vol 118 (10) ◽  
Author(s):  
Peter P. Orth ◽  
Rafael M. Fernandes ◽  
Jeff Walter ◽  
C. Leighton ◽  
B. I. Shklovskii
Keyword(s):  
Oxide Films ◽  
Complex Oxide ◽  
Chemical Doping ◽  
Complex Oxide Films

GaInAsP/InP ORGANOMETALLIC VAPOR PHASE EPITAXY FOR RESEARCH AND FABRICATION OF DEVICES

1990 ◽  
Vol 01 (03n04) ◽  
pp. 347-367 ◽  
Author(s):  
KAZUHITO FURUYA ◽  
YASUYUKI MIYAMOTO
Keyword(s):  
Quantum Well ◽  
Single Crystal ◽  
Vapor Phase ◽  
Optical Communication ◽  
Ballistic Transport ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Growth Technique

GaInAsP/InP organometallic vapor phase epitaxy (OMVPE) is widely used for the fabrication of lasers and detectors used in optical communication. Here we describe the apparatus and growth technique of OMVPE and point out important growth conditions to obtain device quality single-crystal materials. Our research includes the use of OMVPE for the study of quantum-well lasers, ballistic-transport electron devices and nanometer heterostructures.

scholarly journals Probing surfaces and interfaces in complex oxide films via in situ X-ray photoelectron spectroscopy

2020 ◽  
pp. 1-26
Author(s):  
Suresh Thapa ◽  
Rajendra Paudel ◽  
Miles D. Blanchet ◽  
Patrick T. Gemperline ◽  
Ryan B. Comes
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxide Films ◽  
Complex Oxide ◽  
X Ray ◽  
Surfaces And Interfaces ◽  
Complex Oxide Films

Abstract

Pulsed organometallic beam epitaxy of complex oxide films

1991 ◽  
Vol 59 (12) ◽  
pp. 1503-1505 ◽  
Author(s):  
S. J. Duray ◽  
D. B. Buchholz ◽  
S. N. Song ◽  
D. S. Richeson ◽  
J. B. Ketterson ◽  
...  
Keyword(s):  
Oxide Films ◽  
Complex Oxide ◽  
Complex Oxide Films
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