Crystal Quality and Surface Morphology Improvement of Movpe-Grown GaAs-on-Si Using Tertiarybutylarsine

1992 ◽  
Vol 281 ◽  
Author(s):  
S. MIYAGAKI ◽  
S. Ohkubo ◽  
K. Takai ◽  
N. Takagi ◽  
M. Kimura ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Layer Growth ◽  
Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Si Substrate ◽  
Gaas Films

ABSTRACTWe developed GaAs heteroepitaxy on a Si substrate by metalorganic vapor phase epitaxy (MOVPE) using tertiarybutylarsine (TBAs). In buffer layer growth at 450°C, the surface morphology and crystal quality of TBAs-grown films were slightly inferior to those of AsH3-grown films. At buffer layer growth below 400°C, the quality of TBAs-grown films improved. The GaAs films we grew using TBAs had a better quality than those grown using AsH2.

Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy

2012 ◽  
Vol 10 (3) ◽  
pp. 369-372 ◽  
Author(s):  
Koji Okuno ◽  
Takahide Oshio ◽  
Naoki Shibata ◽  
Yoshio Honda ◽  
Masahito Yamaguchi ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Structural Evolution ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Aln Buffer

Effect of AlN Buffer Layer on AlGaN/α-Al2O3Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy

1988 ◽  
Vol 27 (Part 1, No. 7) ◽  
pp. 1156-1161 ◽  
Author(s):  
Yasuo Koide ◽  
Nobuo Itoh ◽  
Kenji Itoh ◽  
Nobuhiko Sawaki ◽  
Isamu Akasaki
Keyword(s):  
Buffer Layer ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Aln Buffer

Improvement in Surface Morphology and Crystal Epitaxial CaF2 on Si (100) Through two Mbe Growth Stages

1988 ◽  
Vol 116 ◽  
Author(s):  
Yoshihiro Morimoto ◽  
Shoichiro Matsumoto ◽  
Shoji Sudo ◽  
Kiyoshi Yoneda
Keyword(s):  
Surface Morphology ◽  
Smooth Surface ◽  
Growth Stage ◽  
Early Growth ◽  
Crystal Quality ◽  
Growth Stages ◽  
Optimum Conditions ◽  
Si Substrate ◽  
Mbe Growth

AbstractWe report the first study on improvement in surface morphology and crystal quality of as—grown epitaxial CaF2 film on a (100) Si substrate grown through two MBE growth stages without any post-growth treatment. The degree of improvement in surfacemorphology and crystal quality depends not only on the thickness of an initial thin CaF2 film grown at the early growth stage of 550ºC but also on both the subsrate temperature and thickness of a sequential grown CaF2 film used for thesecond growth stage. Under optimum conditions, the CaF2 films exhibited high quality with an RBS/channeling minimum yield of 4%, together with a very smooth surface morphology without any other nuclel or cracks.

scholarly journals Синтез гексагональных слоев AlN и GaN на Si(100)-подложке методом хлоридной газофазной эпитаксии

2019 ◽  
Vol 89 (4) ◽  
pp. 574
Author(s):  
В.Н. Бессолов ◽  
Е.В. Гущина ◽  
Е.В. Коненкова ◽  
С.Д. Коненков ◽  
Т.В. Львова ◽  
...  
Keyword(s):  
Aqueous Solution ◽  
Buffer Layer ◽  
Vapor Phase ◽  
Silicon Surface ◽  
Nucleation And Growth ◽  
Vapor Phase Epitaxy ◽  
Si Substrate ◽  
Rocking Curve ◽  
Surface Nucleation ◽  
Crystallographic Orientations

AbstractSynthesis of AlN and GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy has been considered. The process includes sulfidizing of the silicon surface, nucleation and growth of an AlN layer, and then formation of a GaN/AlN structure. It has been found that in the case of a (100)Si substrate, GaN nucleates on buffer AlN layers that may have two crystallographic orientations in contrast to a Si(111) substrate, on which a buffer layer may have only one orientation. It has been shown that the treatment of the Si(100) substrate in an aqueous solution of (NH_4)_2S decreases the FWHM of the rocking curve for GaN(0002) by a factor of 1.5.

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