Buffer-layer-free growth of high-quality epitaxial GaN films on 4H-SiC substrate by metal-organic chemical vapor deposition

2005 ◽  
Vol 276 (3-4) ◽  
pp. 407-414 ◽  
Author(s):  
Jae Kyeong Jeong ◽  
Jung-Hae Choi ◽  
Hyun Jin Kim ◽  
Hui-Chan Seo ◽  
Hee Jin Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
High Quality ◽  
Metal Organic ◽  
Free Growth ◽  
Organic Chemical Vapor Deposition

Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer

CrystEngComm ◽  
2020 ◽  
Vol 22 (7) ◽  
pp. 1160-1165 ◽  
Author(s):  
Yingnan Huang ◽  
Jianxun Liu ◽  
Xiujian Sun ◽  
Xiaoning Zhan ◽  
Qian Sun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Transition Layer ◽  
Smooth Surface ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

We reported the successful growth of a crack-free high-quality 2 μm-thick Al0.5Ga0.5N film with a smooth surface grown on planar Si by metal–organic chemical vapor deposition.

Epitaxial Growth of “Strain-Free” Indium Oxide Films on (111) Yttria-Stabilized Zirconia by Metal-Organic Chemical Vapor Deposition

2020 ◽  
Vol 1014 ◽  
pp. 22-26
Author(s):  
Yi Zhuo ◽  
Zi Min Chen ◽  
Sheng Dong Zhang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thick Layer ◽  
Chemical Vapor ◽  
Yttria Stabilized Zirconia ◽  
Organic Chemical ◽  
Stabilized Zirconia ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

In this work, In2O3 thin films were grown on (111) yttria-stabilized zirconia (YSZ) by metal-organic chemical vapor deposition (MOCVD) at different temperature. It is found that samples grown at low temperature showed lower residual stress but higher mosaicity while high growth temperatures could also cause deterioration in crystal quality due to increasing lattice mismatch. To obtain high quality In2O3 film with low residual strain, a 30-nm thick layer grown at 530 °C was introduced as buffer layer, considering both stress relaxation and crystalline mosaicity. By using two-step growth method, a 400 nm-thick, high quality, near-strain-free In2O3 thin film with the full width at half maximum (FWHM) values of (222) diffraction peaks being as narrow as 648 arcsec was successfully obtained.

Influence of the self-buffer layer on ZnO film grown by atmospheric metal organic chemical vapor deposition

2006 ◽  
Vol 515 (4) ◽  
pp. 1527-1531 ◽  
Author(s):  
Jinzhong Wang ◽  
Vincent Sallet ◽  
Gaëlle Amiri ◽  
Jean-François Rommelluere ◽  
Alain Lusson ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
The Self ◽  
Organic Chemical ◽  
Zno Film ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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