Microdefects in Heavily Phosphorus-Doped Czochralski Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 201-204 ◽  
Author(s):  
Zhen Hui Wang ◽  
Xiang Yang Ma ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
High Temperatures ◽  
Effective Means ◽  
Rapid Thermal Anneal ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Phosphorus Doped

Oxygen precipitation (OP) and annihilation of voids in heavily phosphorus (P)-doped Czochralski (Cz) silicon have been investigated. It was found that the nucleation anneal at 650°C resulted in much more pronounced OP in the subsequent high temperature anneal than that at 800 or 900 °C. This was due to that SiP precipitates could be formed in heavily P-doped Cz silicon by the 650oC anneal and they acted as the heterogeneous nuclei for OP in the following anneal at high temperatures. The rapid thermal anneal (RTA) at 1200°C was proved to be an effective means to annihilate voids. Moreover, it was found that the significant OP resulting from the two-step anneal of 650°C/8 h + 1000°C/16 h could also cause the substantial annihilation of voids in heavily P-doped Cz silicon. The mechanisms for the annihilation of voids have been tentatively discussed.

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

2019 ◽  
Vol 18 (1) ◽  
pp. 1001-1011 ◽  
Author(s):  
Yuheng Zeng ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Xinpeng Zhang ◽  
Lixia Lin ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Phosphorus Doped

Enhancement of oxygen precipitation in Czochralski silicon wafers by high-temperature anneals

2006 ◽  
Vol 376-377 ◽  
pp. 169-172 ◽  
Author(s):  
Ling Zhong ◽  
Xiangyang Ma ◽  
Daxi Tian ◽  
Deren Yang
Keyword(s):  
High Temperature ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Oxygen precipitation in heavily phosphorus-doped silicon wafer annealed at high temperatures

2009 ◽  
Vol 159-160 ◽  
pp. 145-148 ◽  
Author(s):  
Yuheng Zeng ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Jiahe Chen ◽  
Duanlin Que
Keyword(s):  
Silicon Wafer ◽  
High Temperatures ◽  
Oxygen Precipitation ◽  
Doped Silicon ◽  
Phosphorus Doped

Simultaneous Implant Activation and Isolation Formation in GaAs in a Single High-Temperature Anneal

1992 ◽  
Vol 262 ◽  
Author(s):  
Kei-Yu Ko ◽  
S. Chen ◽  
G. Braunstein ◽  
L.-R. Zheng ◽  
S.-T. Lee
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
High Temperatures ◽  
Active Regions ◽  
High Resistivity ◽  
Thermally Stable ◽  
Electrical Isolation ◽  
Device Processing ◽  
High Temperature Anneal ◽  
Thermal Stability Of

ABSTRACTUsing void-related compensation in Al-implanted GaAs, high-resistivity isolation regions that are thermally stable to high temperatures (> 700 °C) are demonstrated. The high-temperature thermal stability of the isolation regions allows the simplification of device processing in which a single high-temperature anneal (e.g., at 900 °C) can be used to activate the implant dopants in the device-active regions, and simultaneously to convert the Al-implanted regions highly resistive for electrical isolation. Other advantages of using void-related isolation will also be discussed.

Oxygen precipitation heterogeneously nucleating on silicon phosphide precipitates in heavily phosphorus-doped Czochralski silicon

2009 ◽  
Vol 105 (9) ◽  
pp. 093503 ◽  
Author(s):  
Yuheng Zeng ◽  
Xiangyang Ma ◽  
Daxi Tian ◽  
Weiyan Wang ◽  
Longfei Gong ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Phosphorus Doped
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