Defect formation during the initial stage of physical vapor transport (PVT) growth of 4H-SiC crystals in the [000-1] and [11-20] directions was investigated by x-ray diffraction, defect-selective etching, and micro Raman scattering imaging. X-ray diffraction studies showed that the growths in the [000-1] and [11-20] directions exhibited markedly different behaviors with respect to the defect formation during the initial stage of growth. While a characteristic lattice plane bending was observed for the PVT growth along [000-1], a tilted domain structure was revealed near the grown crystal/seed interface for the growth in the [11-20] direction. Micro Raman scattering imaging revealed that nitrogen enrichment occurred near the grown crystal/seed interface and was associated with compressive stress parallel to the interface. Based on the results, the defect formation mechanisms during the initial stage of PVT growth of 4H-SiC are discussed.
