Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition

2017 ◽  
Vol 477 ◽  
pp. 164-168 ◽  
Author(s):  
Y.H. Lin ◽  
K.Y. Lin ◽  
W.J. Hsueh ◽  
L.B. Young ◽  
T.W. Chang ◽  
...  
2006 ◽  
Vol 89 (22) ◽  
pp. 222906 ◽  
Author(s):  
K. Y. Lee ◽  
W. C. Lee ◽  
Y. J. Lee ◽  
M. L. Huang ◽  
C. H. Chang ◽  
...  

2013 ◽  
Vol 6 (12) ◽  
pp. 121201 ◽  
Author(s):  
Rei-Lin Chu ◽  
Wei-Jen Hsueh ◽  
Tsung-Hung Chiang ◽  
Wei-Chin Lee ◽  
Hsiao-Yu Lin ◽  
...  

2009 ◽  
Vol 21 (1) ◽  
pp. 015302 ◽  
Author(s):  
E Janik ◽  
A Wachnicka ◽  
E Guziewicz ◽  
M Godlewski ◽  
S Kret ◽  
...  

Author(s):  
Aleksandr V. Plokhikh ◽  
Iryna S. Golovina ◽  
Matthias Falmbigl ◽  
Igor A. Karateev ◽  
Alexander L. Vasiliev ◽  
...  

We report on the formation of epitaxial perovskite oxide superlattice structures by atomic layer deposition (ALD), which are integrated monolithically on Si wafers using a template layer of SrTiO3 deposited by hybrid molecular beam epitaxy.


2004 ◽  
Vol 85 (14) ◽  
pp. 2902-2904 ◽  
Author(s):  
Hyoungsub Kim ◽  
Paul C. McIntyre ◽  
Chi On Chui ◽  
Krishna C. Saraswat ◽  
Mann-Ho Cho

2004 ◽  
Vol 84 (7) ◽  
pp. 1171-1173 ◽  
Author(s):  
M.-H. Cho ◽  
H. S. Chang ◽  
D. W. Moon ◽  
S. K. Kang ◽  
B. K. Min ◽  
...  

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