Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y2O3and Atomic Layer Deposition of Al2O3: A Comparative Study

2013 ◽  
Vol 6 (12) ◽  
pp. 121201 ◽  
Author(s):  
Rei-Lin Chu ◽  
Wei-Jen Hsueh ◽  
Tsung-Hung Chiang ◽  
Wei-Chin Lee ◽  
Hsiao-Yu Lin ◽  
...  
2006 ◽  
Vol 89 (22) ◽  
pp. 222906 ◽  
Author(s):  
K. Y. Lee ◽  
W. C. Lee ◽  
Y. J. Lee ◽  
M. L. Huang ◽  
C. H. Chang ◽  
...  

2009 ◽  
Vol 21 (1) ◽  
pp. 015302 ◽  
Author(s):  
E Janik ◽  
A Wachnicka ◽  
E Guziewicz ◽  
M Godlewski ◽  
S Kret ◽  
...  

Author(s):  
Aleksandr V. Plokhikh ◽  
Iryna S. Golovina ◽  
Matthias Falmbigl ◽  
Igor A. Karateev ◽  
Alexander L. Vasiliev ◽  
...  

We report on the formation of epitaxial perovskite oxide superlattice structures by atomic layer deposition (ALD), which are integrated monolithically on Si wafers using a template layer of SrTiO3 deposited by hybrid molecular beam epitaxy.


2021 ◽  
Author(s):  
Ran Zhao ◽  
Kai Zhang ◽  
Jiahao Zhu ◽  
Shuang Xiao ◽  
Wei Xiong ◽  
...  

Interface passivation is of the pivot to achieve high-efficiency organic metal halide perovskite solar cells (PSCs). Atomic layer deposition (ALD) of wide band gap oxides has recently shown great potential...


2015 ◽  
Vol 357 ◽  
pp. 635-642 ◽  
Author(s):  
Jhuma Gope ◽  
Vandana ◽  
Neha Batra ◽  
Jagannath Panigrahi ◽  
Rajbir Singh ◽  
...  

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