Lanthanum aluminate by atomic layer deposition and molecular beam epitaxy

2005 ◽  
Vol 23 (6) ◽  
pp. 2480 ◽  
Author(s):  
D. H. Triyoso ◽  
H. Li ◽  
R. I. Hegde ◽  
Z. Yu ◽  
K. Moore ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Atomic Layer Deposition ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Lanthanum Aluminate ◽  
Layer Deposition

Molecular beam epitaxy grown template for subsequent atomic layer deposition of high κ dielectrics

2006 ◽  
Vol 89 (22) ◽  
pp. 222906 ◽  
Author(s):  
K. Y. Lee ◽  
W. C. Lee ◽  
Y. J. Lee ◽  
M. L. Huang ◽  
C. H. Chang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Atomic Layer Deposition ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Layer Deposition

Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y2O3and Atomic Layer Deposition of Al2O3: A Comparative Study

2013 ◽  
Vol 6 (12) ◽  
pp. 121201 ◽  
Author(s):  
Rei-Lin Chu ◽  
Wei-Jen Hsueh ◽  
Tsung-Hung Chiang ◽  
Wei-Chin Lee ◽  
Hsiao-Yu Lin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Atomic Layer Deposition ◽  
Comparative Study ◽  
Molecular Beam ◽  
Surface Passivation ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals ZnTe–ZnO core–shell radial heterostructures grown by the combination of molecular beam epitaxy and atomic layer deposition

2009 ◽  
Vol 21 (1) ◽  
pp. 015302 ◽  
Author(s):  
E Janik ◽  
A Wachnicka ◽  
E Guziewicz ◽  
M Godlewski ◽  
S Kret ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Atomic Layer Deposition ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Core Shell ◽  
Layer Deposition

A low-temperature route for producing epitaxial perovskite superlattice structures on (001)-oriented SrTiO3/Si substrates

2021 ◽  
Author(s):  
Aleksandr V. Plokhikh ◽  
Iryna S. Golovina ◽  
Matthias Falmbigl ◽  
Igor A. Karateev ◽  
Alexander L. Vasiliev ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Perovskite Oxide ◽  
Si Substrates ◽  
Layer Deposition ◽  
Superlattice Structures

We report on the formation of epitaxial perovskite oxide superlattice structures by atomic layer deposition (ALD), which are integrated monolithically on Si wafers using a template layer of SrTiO3 deposited by hybrid molecular beam epitaxy.

ALD of Lanthanum Aluminate Using Lanthanum Formamidinate Precursor

2007 ◽  
Vol 1036 ◽  
Author(s):  
Huazhi Li ◽  
Deodatta Vinayak Shenai ◽  
Ralph Pugh ◽  
Jiyoung Kim
Keyword(s):  
Thermal Stability ◽  
Atomic Layer Deposition ◽  
Vapor Pressure ◽  
Atomic Layer ◽  
Electrical Characteristics ◽  
Lanthanum Aluminate ◽  
Layer Deposition

AbstractThe physical and electrical characteristics of La2O3 and LaAlO3 films, deposited by atomic layer deposition (ALD) and using a new La formamidinate precursor (La-FAMD), were investigated. The La-FAMD precursor has superior thermal stability and is also the most volatile La source available today. The vapor pressure of La-FAMD, maintained at 100 ºC, is approximately 60 times higher than the commercial available source La-THD (THD = tetramethylheptanedionato).

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition
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