Estimation of Ga adatom diffusion length for GaP growth by molecular beam epitaxy

ABSTRACTAs reported previously, perfect facets can be achieved at the side walls of submicron silicon mesa structures grown by molecular beam epitaxy (MBE) with micro shadow masks [1]. An essentially self organizing, three-dimensional growth was observed. In this paper we present the results of the epitaxial growth on (001) substrates using long (≥ 1μm), lineshaped mask apertures, which put constraints on the formation of facets. At a growth temperature of 500°C {111} facet formation is observed for lineshaped mesas oriented along the <110> direction of the substrate. Side walls with a length of I μm are perfectly plane, while mesas with a length of 10 μm and more show rough sidewalls. This is explained by a limited silicon adatom diffusion on the facet. For higher flux rates the facet formation is suppressed. This can be understood in terms of a reduced adatom diffusion.A crossover from {111} to {113} facet formation is observed at growth temperatures above 500°C. A model for the temperature dependent formation of {111} and {113} facets is given.

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Molecular beam epitaxy of β-FeSi2 films on Si(111) substrates and its influence on minority-carrier diffusion length of Si measured by EBIC

Physics Procedia ◽

10.1016/j.phpro.2011.01.029 ◽

2011 ◽

Vol 11 ◽

pp. 23-26

Author(s):

H. Kawakami ◽

M. Suzuno ◽

K. Akutsu ◽

J. Chen ◽

Y. Fuxing ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion

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AFM Study of Film Growth Kinetics in Heteroepitaxy

MRS Proceedings ◽

10.1557/proc-263-59 ◽

1992 ◽

Vol 263 ◽

Author(s):

William M. Tong ◽

Eric J. Snyder ◽

R. Stanley Williams ◽

Akihisa Yanase ◽

Yusaburo Segawa ◽

...

Keyword(s):

Thin Films ◽

Correlation Function ◽

Molecular Beam Epitaxy ◽

Kinetic Parameter ◽

Molecular Beam ◽

Diffusion Length ◽

Film Growth ◽

Growth Theory ◽

Atomic Force ◽

Substrate Temperatures

ABSTRACTThe growth of CuCl/CaF2 heterostructures has been studied with an atomic force microscope (AFM). We have grown by molecular beam epitaxy (MBE) CuCl thin films at various substrate temperatures and thicknesses on CaF2(111) substrates. AFM studies reveal that islanding is the dominant growth mechanism. We calculated the height-height correlation function, 〈lh(qt)|2〉, for each of our films and compared them to the predictions made by the Shadowing Growth Theory, a preexisting growth model that enabled us to extract the important kinetic parameter of surface diffusion length for the growth condition of each of the four films.

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Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

Journal of Nanomaterials ◽

10.1155/2009/435451 ◽

2009 ◽

Vol 2009 ◽

pp. 1-7 ◽

Cited By ~ 10

Author(s):

Lorenzo Rigutti ◽

Andres De Luna Bugallo ◽

Maria Tchernycheva ◽

Gwenole Jacopin ◽

François H. Julien ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Diffusion Length ◽

Catalyst Particle ◽

Dopant Distribution ◽

Dopant Incorporation ◽

Nanowire Surface ◽

Si Doped ◽

The Mean ◽

Direct Incorporation

We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.

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