Facet Formation of Lineshaped Silicon Mesas Grown with Micro Shadow Masks

ABSTRACTAs reported previously, perfect facets can be achieved at the side walls of submicron silicon mesa structures grown by molecular beam epitaxy (MBE) with micro shadow masks [1]. An essentially self organizing, three-dimensional growth was observed. In this paper we present the results of the epitaxial growth on (001) substrates using long (≥ 1μm), lineshaped mask apertures, which put constraints on the formation of facets. At a growth temperature of 500°C {111} facet formation is observed for lineshaped mesas oriented along the <110> direction of the substrate. Side walls with a length of I μm are perfectly plane, while mesas with a length of 10 μm and more show rough sidewalls. This is explained by a limited silicon adatom diffusion on the facet. For higher flux rates the facet formation is suppressed. This can be understood in terms of a reduced adatom diffusion.A crossover from {111} to {113} facet formation is observed at growth temperatures above 500°C. A model for the temperature dependent formation of {111} and {113} facets is given.

Download Full-text

Growth of Quaternary AlInGaN/GaN Heterostructures by Plasma Assisted MBE

MRS Proceedings ◽

10.1557/proc-743-l4.5 ◽

2002 ◽

Vol 743 ◽

Author(s):

E. Monroy ◽

N. Gogneau ◽

D. Jalabert ◽

F. Enjalbert ◽

E. Bellet-Amalnc ◽

...

Keyword(s):

Binding Energy ◽

Molecular Beam Epitaxy ◽

Substrate Temperature ◽

Epitaxial Growth ◽

Mole Fraction ◽

Molecular Beam ◽

Growth Front ◽

Two Dimensional ◽

High Binding Energy ◽

Dimensional Growth

ABSTRACTEpitaxial growth of quaternary AlGalnN compounds by plasma-assisted molecular beam epitaxy has been demonstrated. Two-dimensional growth is achieved under In excess, with a monolayer of In segregating at the growth front. The maximum In incorporation is significantly affected by the substrate temperature and the Al mole fraction of the alloy. This behavior has been attributed to the enhancement of In segregation due to the high binding energy of A1N compared to InN and GaN.

Download Full-text

Growth and Decay of Germanium Islands on Silicon Studied by High Temperature Stm

MRS Proceedings ◽

10.1557/proc-583-155 ◽

1999 ◽

Vol 583 ◽

Author(s):

M. Kästner ◽

B. Voigtländer

Keyword(s):

High Temperature ◽

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Scanning Tunneling Microscope ◽

Strain Energy ◽

Molecular Beam ◽

Three Dimensional ◽

Scanning Tunneling ◽

Two Dimensional ◽

Tunneling Microscope

AbstractWe use a scanning tunneling microscope (STM) capable of imaging the growing layer at high temperature during molecular beam epitaxy (MBE) to study the epitaxial growth of Germanium on Silicon and the decay of Ge islands. The periodicity of the (2×N) reconstruction of two-dimensional Ge layers on Si(001) is measured as function of the Ge coverage. Strain energy drives the formation of the (2×N) reconstruction and Si/Ge intermixing. A comparison to total energy calculations predicting the periodicity of the (2×N) reconstruction is used to estimate the amount of Si-Ge intermixing near the surface. The evolution of the size and shape of individual “hut clusters” is measured and explained by kinetically self-limiting growth. The relaxation of kinetically a determined morphology towards equilibrium is followed for a Ge layer on Si(111). Strained two-dimensional as well as partially relaxed three-dimensional islands dissolve and are soaked up by larger three-dimensional islands which are dislocated and therefore fully relaxed.

Download Full-text

Molecular Beam Epitaxy of ZnS Films on Arsenic Passivated Silicon Surfaces

MRS Proceedings ◽

10.1557/proc-318-207 ◽

1993 ◽

Vol 318 ◽

Cited By ~ 6

Author(s):

Xiaochuan Zhou ◽

Wiley P. Kirk

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Three Dimensional ◽

High Energy ◽

Silicon Surfaces ◽

Crystalline Quality ◽

Dimensional Growth ◽

Initial Adsorption ◽

Passivated Silicon ◽

Zns Films

ABSTRACTThe crystalline quality of ZnS films grown on arsenic covered Si(100) surfaces is shown to be improved as compared to films grown on bare silicon surfaces by MBE (molecular beam epitaxy). Employing RGA (residual gas analyzer) and RHEED (reflection high energy electron diffraction) techniques, we found that a strong initial adsorption of sulfur on bare silicon surfaces led to the formation of disordered silicon-sulfide surfaces. This disordered surface initiated three-dimensional growth of ZnS and resulted in poor crystalline quality. An arsenic overlayer was found to be effective in preventing the interaction of sulfur with the silicon surface and thereby maintained surface ordering. X-ray rocking curve analysis indicated higher crystallinity in ZnS films grown on arsenic covered surfaces.

Download Full-text