AFM Study of Film Growth Kinetics in Heteroepitaxy

ABSTRACTThe growth of CuCl/CaF2 heterostructures has been studied with an atomic force microscope (AFM). We have grown by molecular beam epitaxy (MBE) CuCl thin films at various substrate temperatures and thicknesses on CaF2(111) substrates. AFM studies reveal that islanding is the dominant growth mechanism. We calculated the height-height correlation function, 〈lh(qt)|2〉, for each of our films and compared them to the predictions made by the Shadowing Growth Theory, a preexisting growth model that enabled us to extract the important kinetic parameter of surface diffusion length for the growth condition of each of the four films.

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Highly Oriented NiTiCu Shape Memory Thin Films Grown by Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-695-l12.3.1 ◽

2001 ◽

Vol 695 ◽

Author(s):

R. Hassdorf ◽

J. Feydt ◽

R. Pascal ◽

S. Thienhaus ◽

M. Boese ◽

...

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Shape Memory ◽

Molecular Beam ◽

Film Growth ◽

Film Plane ◽

High Ratio ◽

Plane Normal ◽

Superelastic Behavior ◽

Selection Of

ABSTRACTWe present a study demonstrating the capability for controlled shape memory thin film growth using molecular beam epitaxy. Here, NiTiCu alloy films were grown which are known to exhibit the martensitic transformation well above room temperature. Remarkably, the microstructure of these films was found to be very different compared to conventionally sputtered polycrystalline films: here, the crystallites are highly oriented within 3° along the film plane normal. Moreover, a splitting of the martensite orientation is detected indicating the selection of only two specific martensite variants. Mechanical stress measurements reveal a high ratio of recoverable stress even for films below 500 nm thickness. These results open up the possibility for tailoring microstructure and crystallographic orientation of shape memory thin films and thus suggest promising characteristics, especially in regard to their superelastic behavior.

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Atomic Force Microscopy Studies of Barium Titanate Thin Films Prepared by Laser Molecular Beam Epitaxy

Chinese Physics Letters ◽

10.1088/0256-307x/14/2/016 ◽

1997 ◽

Vol 14 (2) ◽

pp. 134-137 ◽

Cited By ~ 7

Author(s):

Cui Da-fu ◽

Lü Hui-bin ◽

Wang Hui-sheng ◽

Chen Zheng-hao ◽

Zhou Yue-liang ◽

...

Keyword(s):

Thin Films ◽

Atomic Force Microscopy ◽

Molecular Beam Epitaxy ◽

Barium Titanate ◽

Molecular Beam ◽

Force Microscopy ◽

Laser Molecular Beam Epitaxy ◽

Atomic Force

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Machine-learning-assisted thin-film growth: Bayesian optimization in molecular beam epitaxy of SrRuO3 thin films

APL Materials ◽

10.1063/1.5123019 ◽

2019 ◽

Vol 7 (10) ◽

pp. 101114 ◽

Cited By ~ 6

Author(s):

Yuki K. Wakabayashi ◽

Takuma Otsuka ◽

Yoshiharu Krockenberger ◽

Hiroshi Sawada ◽

Yoshitaka Taniyasu ◽

...

Keyword(s):

Thin Film ◽

Machine Learning ◽

Thin Films ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Film Growth ◽

Thin Film Growth ◽

Bayesian Optimization

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Atomic force microscopy observation of Bi2Sr2CaCu2O8+? thin films prepared by molecular beam epitaxy

Journal of Low Temperature Physics ◽

10.1007/bf00753876 ◽

1996 ◽

Vol 105 (5-6) ◽

pp. 1279-1282 ◽

Cited By ~ 1

Author(s):

Masato Nose ◽

Ichiro Tsukada ◽

Kunimitsu Uchinokura

Keyword(s):

Thin Films ◽

Atomic Force Microscopy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Microscopy Observation ◽

Force Microscopy ◽

Atomic Force ◽

Atomic Force Microscopy Observation

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Effects of Buffer-layer Thickness and Active-layer Growth Temperature on ZnO Nanocrystalline Thin Films Grown by Molecular Beam Epitaxy

Korean Journal of Metals and Materials ◽

10.3365/kjmm.2014.52.9.739 ◽

2014 ◽

Vol 52 (9) ◽

pp. 739-744 ◽

Cited By ~ 4

Author(s):

Jae-Young Leem ◽

Byunggu Kim ◽

Giwoong Nam ◽

Youngbin Park ◽

Hyunggil Park

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Buffer Layer ◽

Layer Thickness ◽

Active Layer ◽

Growth Temperature ◽

Molecular Beam ◽

Layer Growth ◽

Buffer Layer Thickness ◽

Nanocrystalline Thin Films

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Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽

10.3390/photonics8060215 ◽

2021 ◽

Vol 8 (6) ◽

pp. 215

Author(s):

Rajeev R. Kosireddy ◽

Stephen T. Schaefer ◽

Marko S. Milosavljevic ◽

Shane R. Johnson

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Optical Quality ◽

X Ray Diffraction ◽

Interface Quality ◽

Force Microscopy ◽

Atomic Force ◽

Transmission Electron ◽

Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

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