Oat flour fermented by Lactobacillus strains – Kinetics of volatile compound formation and antioxidant capacity

2022 ◽  
Vol 103 ◽  
pp. 103392
Author(s):  
Małgorzata Wronkowska ◽  
Danuta Rostek ◽  
Marzena Lenkiewicz ◽  
Edyta Kurantowicz ◽  
Teodora Georgieva Yaneva ◽  
...  
Keyword(s):  
Antioxidant Capacity ◽  
Volatile Compound ◽  
Compound Formation ◽  
Oat Flour ◽  
Kinetics Of

Flower metabolomics: volatile compound profile, antioxidant capacity and LC-MS-TOF identification of flavonoids in various tropical flowers

Planta Medica ◽  
2015 ◽  
Vol 81 (16) ◽  
Author(s):  
E Stashenko ◽  
J Mejía ◽  
LJ Sierra ◽  
DC Bernal ◽  
L Gualteros ◽  
...  
Keyword(s):  
Antioxidant Capacity ◽  
Volatile Compound ◽  
Tropical Flowers

Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai
Keyword(s):  
Thin Film ◽  
Film System ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Thin Film System ◽  
Glancing Angle ◽  
Integrated Intensity ◽  
Al Thin Film ◽  
Kinetics Of

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

Kinetics of compound formation in thin film couples of Al and transition metals

1976 ◽  
Vol 13 (1) ◽  
pp. 68-71 ◽  
Author(s):  
J. K. Howard ◽  
R. F. Lever ◽  
P. J. Smith ◽  
P. S. Ho
Keyword(s):  
Thin Film ◽  
Transition Metals ◽  
Compound Formation ◽  
Kinetics Of

Kinetics of Compound Formation in Mn–Sb Thin Films

1977 ◽  
Vol 16 (7) ◽  
pp. 1153-1159 ◽  
Author(s):  
Yukio Takeno ◽  
Hiroyuki Miyata ◽  
Yoshiro Iwama
Keyword(s):  
Thin Films ◽  
Compound Formation ◽  
Kinetics Of

scholarly journals Volatile Compound Formation During Argan Kernel Roasting

2013 ◽  
Vol 8 (1) ◽  
pp. 1934578X1300800 ◽  
Author(s):  
Hanae El Monfalouti ◽  
Zoubida Charrouf ◽  
Manuela Giordano ◽  
Dominique Guillaume ◽  
Badreddine Kartah ◽  
...  
Keyword(s):  
Volatile Compounds ◽  
Volatile Compound ◽  
Compound Formation ◽  
Cold Pressing ◽  
Argan Oil ◽  
Different Types ◽  
Roasting Time

Virgin edible argan oil is prepared by cold-pressing argan kernels previously roasted at 110°C for up to 25 minutes. The concentration of 40 volatile compounds in virgin edible argan oil was determined as a function of argan kernel roasting time. Most of the volatile compounds begin to be formed after 15 to 25 minutes of roasting. This suggests that a strictly controlled roasting time should allow the modulation of argan oil taste and thus satisfy different types of consumers. This could be of major importance considering the present booming use of edible argan oil.

Stress development and relaxation during reactive film formation of Ni2Si

2004 ◽  
Vol 19 (2) ◽  
pp. 676-680 ◽  
Author(s):  
K.P. Liew ◽  
R.A. Bernstein ◽  
C.V. Thompson
Keyword(s):  
Film Formation ◽  
Compressive Force ◽  
Volumetric Strain ◽  
Growth Stress ◽  
Stress Generation ◽  
Silicon Substrates ◽  
Compound Formation ◽  
Nickel Thin Films ◽  
Curvature Measurements ◽  
Kinetics Of

Using continuous wafer-curvature measurements, stress generation was monitored as nickel thin films reacted with silicon substrates to form Ni2Si during isothermal anneals. A large compressive force developed during the reaction, but gradually relaxed after the reaction was complete. From a model for reactive film formation, a lower limit for the instantaneous stress associated with compound formation was found to be −2.00 ± 0.75 GPa. This instantaneous stress can be explained by a volumetric strain of 1.65 ± 0.62%, which is much smaller than the theoretical volume expansion of 62% in this system. These results suggest that significant inelastic deformation occurs during silicide formation. It was also found that diffusive creep relaxes the growth stress after the reaction. The observed instantaneous stress indicates that the energy of deformation associated with the reaction is of the same order as the energy that drives it, suggesting that stress generation and stress relaxation can play a significant role in the kinetics of reactive film formation.

Kinetics of compound formation in Cu-Sb thin films

1989 ◽  
Vol 223 (3) ◽  
pp. 599-606 ◽  
Author(s):  
R Halimi ◽  
A Merabet
Keyword(s):  
Thin Films ◽  
Compound Formation ◽  
Kinetics Of
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