Microwave dielectric properties of the BaTi5O11 thin film grown on the poly-Si substrate using rf magnetron sputtering

2006 ◽  
Vol 26 (10-11) ◽  
pp. 2151-2154 ◽  
Author(s):  
Bo-Yun Jang ◽  
Young-Hun Jeong ◽  
Suk-Jin Lee ◽  
Sahn Nahm ◽  
Ho-Jung Sun ◽  
...  
2018 ◽  
Vol 739 ◽  
pp. 729-736 ◽  
Author(s):  
Apurba Das ◽  
Anil Kumar Chikkala ◽  
Gyan Prakash Bharti ◽  
Rasmi Ranjan Behera ◽  
Ravi Sankar Mamilla ◽  
...  

2006 ◽  
Vol 45 ◽  
pp. 2351-2354
Author(s):  
Ji Won Choi ◽  
Chong Yun Kang ◽  
Jin Sang Kim ◽  
Seok Jin Yoon ◽  
Hyun Jai Kim ◽  
...  

The dielectric properties of (Ba,Sr)TiO3 (BSTO) and Zr doped BSTO thin films have been investigated to identify candidate thin film dielectric materials having low dielectric loss without degradation of the tunability by continuous composition spread (CCS) technique using off-axis rf magnetron sputtering. The optimized properties of BSTO thin films deposited on Pt/SiO2/Si substrate by CCS were dielectric loss 0.031, tunability 31.5, respectively. The optimized properties of Zr doped BSTO thin films deposited on Pt/SiO2/Si substrate by CCS were improved by dielectric loss 42%, FOM 68% at the same BSTO composition, respectively. To confirm the dielectric properties and compositions by CCS technique, Zr doped BSTO bulk ceramics were evaluated.


2004 ◽  
Vol 43 (8A) ◽  
pp. 5506-5509
Author(s):  
Young-Hun Jeong ◽  
Bo-Yun Jang ◽  
Suk-Jin Lee ◽  
Ho-Jung Sun ◽  
Sahn Nahm ◽  
...  

2005 ◽  
Vol 902 ◽  
Author(s):  
Jin Cheol Kim ◽  
Jun Rok Oh

AbstractThe mixture of PbO-Bi2O3-B2O3 (PBB) were formed on the Ba0.5Sr0.5TiO3 (BST) film and the effects of PBB phase on the dielectric properties of the BST film were investigated. The amorphous PBB layer was deposited on the BST film using rf magnetron sputtering and diffused into the film by heat treatment. The PBB phase in BST film was identified by energy dispersive spectrometer (EDS). Dielectric properties of BST film were significantly improved after the diffusion of PBB. The leakage current density of BST film decreased from 3.24×10-5 A/cm2 to 9.45×10-8 A/cm2 at 1.5 V and the dielectric constant increased from 238 to 533. These results show that the diffusion of insulating metal oxide into the ferroelectric thin film can improve the dielectric properties of the film.


2006 ◽  
Vol 26 (10-11) ◽  
pp. 2165-2168 ◽  
Author(s):  
Suk-Jin Lee ◽  
Bo-Yun Jang ◽  
Young-Hun Jung ◽  
Sahn Nahm ◽  
Hwack-Joo Lee ◽  
...  

2014 ◽  
Vol 40 (9) ◽  
pp. 14957-14964
Author(s):  
Jin-Seong Kim ◽  
Jae-Min Han ◽  
Mi-Ri Joung ◽  
Sang-Hyo Kweon ◽  
Chong-Yun Kang ◽  
...  

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