A High Throughput Search of Dielectric Thin Films for Tunable Devices

2006 ◽  
Vol 45 ◽  
pp. 2351-2354
Author(s):  
Ji Won Choi ◽  
Chong Yun Kang ◽  
Jin Sang Kim ◽  
Seok Jin Yoon ◽  
Hyun Jai Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Rf Magnetron Sputtering ◽  
Dielectric Materials ◽  
Si Substrate ◽  
Dielectric Thin Films ◽  
Low Dielectric ◽  
Film Dielectric

The dielectric properties of (Ba,Sr)TiO3 (BSTO) and Zr doped BSTO thin films have been investigated to identify candidate thin film dielectric materials having low dielectric loss without degradation of the tunability by continuous composition spread (CCS) technique using off-axis rf magnetron sputtering. The optimized properties of BSTO thin films deposited on Pt/SiO2/Si substrate by CCS were dielectric loss 0.031, tunability 31.5, respectively. The optimized properties of Zr doped BSTO thin films deposited on Pt/SiO2/Si substrate by CCS were improved by dielectric loss 42%, FOM 68% at the same BSTO composition, respectively. To confirm the dielectric properties and compositions by CCS technique, Zr doped BSTO bulk ceramics were evaluated.

scholarly journals Effect of Annealing Process on the Dielectric and Tunable Properties of (Bi1.5Zn0.5)(Nb0.5Ti1.5)O7(BZNT) Thin Film

2021 ◽  
Vol 2133 (1) ◽  
pp. 012009
Author(s):  
Yijian Ma ◽  
Shuang Hou ◽  
Linfeng Lv ◽  
Jiatian Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Initial Temperature ◽  
Film Formation ◽  
Rf Magnetron Sputtering ◽  
Annealing Process ◽  
Si Substrates ◽  
Structure Surface

Abstract Bi1.5Zn0.5Nb0.5Ti1.5O7 (BZNT) thin films were deposited on Pt/Ti/SiO2/Si substrates by radio frequency (rf) magnetron sputtering. In this paper, by studying the phase structure, surface morphology, and dielectric properties of BZNT films, it is found that by increasing the initial temperature in the annealing process, the film formation quality, internal stress and dielectric properties of the film can be improved. and the best performance of the BZNT film is obtained under the annealing process at the initial temperature of 500°C. The tuning amount (Tu), Dielectric loss (Loss) and quality factor (FOM) are: 13.55 percent, 0.00298 and 45.46, respectively.

The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin Films

2006 ◽  
Vol 306-308 ◽  
pp. 1313-1318
Author(s):  
J.S. Kim ◽  
B.H. Park ◽  
T.J. Choi ◽  
Se Hyun Shin ◽  
Jae Chul Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
Capacitance Voltage ◽  
Bst Thin Film

Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis orientation has appeared at PBZ film grown at the deposition temperature of 550oC. The c-axis oriented PBZ film has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

Highly frequency-, temperature-, and bias-stable dielectric properties of 500 °C processed Bi2SiO5 thin films with low dielectric loss

2020 ◽  
Vol 20 (6) ◽  
pp. 751-754
Author(s):  
Yifu Ke ◽  
Wenhua Huang ◽  
Santhosh Kumar Thatikonda ◽  
Ruqi Chen ◽  
Chuangye Yao ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Low Dielectric ◽  
Frequency Temperature

Enhanced the Dielectric and Tunable Properties of BZNT Thin Films through Adjusting Annealing Process

2012 ◽  
Vol 252 ◽  
pp. 211-215
Author(s):  
Xiao Hua Sun ◽  
Shuang Hou ◽  
Zhi Meng Luo ◽  
Cai Hua Huang ◽  
Zong Zhi Hu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Grain Size ◽  
Dielectric Loss ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Annealing Process ◽  
Si Substrates ◽  
Tunable Properties

Bismuth zinc niobate titanium (Bi1.5Zn0.5 Nb0.5Ti1.5O7) (BZNT) thin films were deposited on PtTiSiO2Si substrates by radio frequency (rf) magnetron sputtering. The microstructure, surface morphology, stress, dielectric and tunable properties of thin films were investigated as a function of initial annealing temperature. It’s found that high initial annealing temperature increases the grain size, dielectric constant and tunability of BZNT films simultaneously and decreases the tensile stress in films. The BZNT thin film annealed from 500 °C to 700 °C shows the highest FOM value of 45.67 with the smallest dielectric loss and upper tunability.

Improvement of capacitance-voltage (C-V) characteristics of YSZ/Si(001) and ZrO2/Si thin film by Nb-doping

2002 ◽  
Vol 747 ◽  
Author(s):  
Naoki Wakiya ◽  
Tomohiko Moriya ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mizutani
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Oxygen Vacancies ◽  
Rf Magnetron Sputtering ◽  
Lattice Parameter ◽  
Si Substrate ◽  
Stabilized Zirconia ◽  
Ion Drift ◽  
Capacitance Voltage ◽  
Nb Doping

ABSTRACTYttria stabilized zirconia (YSZ) and zirconia (ZrO2) thin films without and with Nb-doping were prepared on Si substrate by rf-magnetron sputtering. Undoped YSZ and ZrO2 thin films had (001) orientation, and the orientation was unchanged by the Nb-doping. For both undoped YSZ and ZrO2 thin films, around 2.0 V ion-drift type hysteresis was clearly observed in capacitance-voltage (C-V) characteristics. Nb-doping into YSZ brought about the increase of lattice parameter up to 20 mol% of Nb, which suggests that Nb was incorporated into YSZ lattice up to 20 mol%. By the Nb-doping, the hysteresis in C-V characteristics for YSZ thin film was considerable decreased to around 0.1 V. Drastic suppression of the hysteresis in C-V characteristics was observed for Nb-doped ZrO2 thin film. In this case, the hysteresis was completely disappeared. These facts suggest that oxygen vacancies in YSZ and ZrO2 thin films would be suppressed or disappeared by Nb-doping. This means that Nb is a excellent dopant for both YSZ and ZrO2 to suppress the ion-drift type hysteresis.

Radio Frequency (RF) Magnetron Sputtered Barium Strontium Titanate (BST) Thin Film

2017 ◽  
Vol 727 ◽  
pp. 942-946 ◽  
Author(s):  
Juan Li ◽  
Cong Chun Zhang ◽  
Yan Lei Wang ◽  
Yang Gao ◽  
Xiao Lin Zhao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Perovskite Phase ◽  
Rf Magnetron Sputtering ◽  
Barium Strontium ◽  
Metal Insulator Metal ◽  
Bst Thin Film

Barium strontium titanate (BST) thin films with excellent dielectric properties are deposited by on-axis RF magnetron sputtering system. The effects of composition of the target and oxygen partial pressure on the microstructure of BST thin film have been investigated. The dielectric properties of the thin films are investigated. The results show that composition of BST thin film deposited with pure argon ambient by the target with 30atm% excess of Ba and Sr is stoichiometric. Perovskite phase can be observed in the thin film annealed in oxygen at 750 °C for 30 min. A metal-insulator-metal (MIM) capacitor is fabricated by microfabrication technique. The capacitance value at 2 GHz is 0.417 pF and 1.42 pF for 50 nm and 90 nm BST thin film respectively, and the leakage current density is 6×10-6 A/cm2 and 5.35×10-8 A/cm2 respectively.

Spectroscopic Ellipsometry Study on HfO2 Thin Films Deposited at Different RF Powers

2011 ◽  
Vol 287-290 ◽  
pp. 2165-2168 ◽  
Author(s):  
Wen Ting Liu ◽  
Zheng Tang Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
Interfacial Layer ◽  
Rf Magnetron Sputtering ◽  
Interface Layer ◽  
Rf Power ◽  
Si Substrate ◽  
Structured Model ◽  
Transmission Electron

HfO2thin films were prepared by radio frequency (RF) magnetron sputtering at different RF powers. The influence of RF power on optical properties of HfO2thin films were investigated by spectroscopic ellipsometry (SE) toghther with high-resolution transmission electron microscopy (HR-TEM) and Fourier transform infrared spectroscopy (FTIR). The results show that there is a SiO2interface layer between HfO2thin film and Si substrate. A four layer structured model consisting of SiO2interfacial layer was used to fit the SE data. With the increasing RF power, the refractive index of the HfO2thin films increases firstly and then decreases and, the extinction coefficient of the HfO2thin films increases little.

The Influence of O2/Ar on the Dielectric Properties of Bismuth Zinc Niobate Titanium Thin Films Prepared by RF Magnetron Sputtering

2012 ◽  
Vol 252 ◽  
pp. 202-206
Author(s):  
Xiao Hua Sun ◽  
Zhi Meng Luo ◽  
Shuang Hou ◽  
Cai Hua Huang ◽  
Jun Zou
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Si Substrates ◽  
Low Dielectric ◽  
Metal Insulator Metal ◽  
Titanium Thin Films

BZNT (Bi1.5Zn0.5Nb0.5Ti1.5O7) thin films were prepared on Pt/Ti/SiO2/Si substrates by radio frequency (RF) magnetron sputtering in different O2/Ar ranging from 4:16 to 7:13. The structure and surface morphology of BZNT thin films were investigated by x-ray diffraction (XRD) and atom force microscopy (AFM). The analysis of component in BZNT films were carried out by x-ray photoelectron spectroscopy (XPS). The dielectric measurements were conducted on metal-insulator-metal capacitors at the frequency from 100 Hz to 1M Hz. It’s found that the O2/Ar ratios significantly influence the elements content in BZNT thin films and the morphology and dielectric properties of BZNT thin films. At 1M Hz, the dielectric constant of BZNT thin films deposited at O2/Ar ranging from 4:16 to 7:13 is 212, 187, 171, 196, respectively. The BZNT thin film prepared at O2/Ar = 6:14 shows the highest figure of merit for its very low dielectric loss of 0.0024.

Improvement of capacitance-voltage (C-V) characteristics of YSZ/Si(001) and ZrO2/Si thin film by Nb-doping

2002 ◽  
Vol 745 ◽  
Author(s):  
Naoki Wakiya ◽  
Tomohiko Moriya ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mizutani
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Oxygen Vacancies ◽  
Rf Magnetron Sputtering ◽  
Lattice Parameter ◽  
Si Substrate ◽  
Stabilized Zirconia ◽  
Ion Drift ◽  
Capacitance Voltage ◽  
Nb Doping

ABSTRACTYttria stabilized zirconia (YSZ) and zirconia (ZrO2) thin films without and with Nb-doping were prepared on Si substrate by rf-magnetron sputtering. Undoped YSZ and ZrO2 thin films had (001) orientation, and the orientation was unchanged by the Nb-doping. For both undoped YSZ and ZrO2 thin films, around 2.0 V ion-drift type hysteresis was clearly observed in capacitance-voltage (C-V) characteristics. Nb-doping into YSZ brought about the increase of lattice parameter up to 20 mol% of Nb, which suggests that Nb was incorporated into YSZ lattice up to 20 mol%. By the Nb-doping, the hysteresis in C-V characteristics for YSZ thin film was considerable decreased to around 0.1 V. Drastic suppression of the hysteresis in C-V characteristics was observed for Nb-doped ZrO2 thin film. In this case, the hysteresis was completely disappeared. These facts suggest that oxygen vacancies in YSZ and ZrO2 thin films would be suppressed or disappeared by Nb-doping. This means that Nb is a excellent dopant for both YSZ and ZrO2 to suppress the ion-drift type hysteresis.

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