The phase, microstructure evolution and the Nd3+ function in the fabrication process of LuAG transparent ceramics

(Tb0.6Y0.4)3Al5O12 transparent ceramics were successfully fabricated by solid-state reactive sintering using Tb4O7, Y2O3, and α-Al2O3 powders as raw materials. The effect of (Tb+Y)/Al ratio on microstructure evolution and densification process was investigated in detailed. The results showed that the grain growth kinetics were significantly affected by (Tb+Y)/Al ratio. Al-rich and Tb-rich phases appeared in part of the samples of different ratios. Particularly, excess aluminum increased the diffusing process, leading to a higher densification rate, while samples with excess terbium ratios displayed a smaller grain size and lower relative density. The optical quality was highly related to the amount of the secondary phase produced by different (Tb+Y)/Al ratios. Finally, (Tb0.6Y0.4)3Al5O12 transparent ceramics have been fabricated through pre-sintering in vacuum, followed by hot isostatic sintering (HIP), and the best transmittance of sample with a 4 mm thickness was approximately 78% at 1064 nm.

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Influence of doping concentration on microstructure evolution and sintering kinetics of Er:YAG transparent ceramics

Optical Materials ◽

10.1016/j.optmat.2014.08.016 ◽

2014 ◽

Vol 37 ◽

pp. 706-713 ◽

Cited By ~ 18

Author(s):

Jing Liu ◽

Qiang Liu ◽

Jiang Li ◽

Maxim Ivanov ◽

Xuewei Ba ◽

...

Keyword(s):

Microstructure Evolution ◽

Doping Concentration ◽

Transparent Ceramics ◽

Sintering Kinetics ◽

Kinetics Of

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Densification and microstructure evolution of Cr4+,Nd3+:YAG transparent ceramics for self-Q-switched laser

Ceramics International ◽

10.1016/j.ceramint.2007.07.019 ◽

2008 ◽

Vol 34 (7) ◽

pp. 1675-1679 ◽

Cited By ~ 18

Author(s):

Jiang Li ◽

Yusong Wu ◽

Yubai Pan ◽

Huamin Kou ◽

Yun Shi ◽

...

Keyword(s):

Microstructure Evolution ◽

Transparent Ceramics

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Microstructure evolution during vacuum sintering of Tm,Ho:(Lu2/3Sc1/3)2O3 transparent ceramics

International Conference on Optoelectronic and Microelectronic Technology and Application ◽

10.1117/12.2584595 ◽

2020 ◽

Author(s):

Hanlin Yang ◽

Tao Xu ◽

Wei Jing ◽

Bin Kang ◽

Jiachen Liu

Keyword(s):

Microstructure Evolution ◽

Transparent Ceramics ◽

Vacuum Sintering

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Microstructure evolution during reactive sintering of Y3Al5O12:Nd3+ transparent ceramics: Influence of green body annealing

Journal of the European Ceramic Society ◽

10.1016/j.jeurceramsoc.2019.05.013 ◽

2019 ◽

Vol 39 (13) ◽

pp. 3867-3875 ◽

Cited By ~ 1

Author(s):

R.P. Yavetskiy ◽

A.G. Doroshenko ◽

S.V. Parkhomenko ◽

I.O. Vorona ◽

A.V. Tolmachev ◽

...

Keyword(s):

Microstructure Evolution ◽

Transparent Ceramics ◽

Green Body ◽

Reactive Sintering

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Densification and microstructure evolution of hot-pressed Er:SrF2 transparent ceramics

Materials Chemistry and Physics ◽

10.1016/j.matchemphys.2021.125682 ◽

2021 ◽

pp. 125682

Author(s):

Zuodong Liu ◽

Yang Liu ◽

Songchang Fu ◽

Xue Chen ◽

Qilong Shen ◽

...

Keyword(s):

Microstructure Evolution ◽

Transparent Ceramics

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Linewidth measurement using the low voltage SEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100144681 ◽

1986 ◽

Vol 44 ◽

pp. 652-653

Author(s):

M.G. Rosenfield

Keyword(s):

Electron Microscope ◽

Scanning Electron Microscope ◽

Integrated Circuits ◽

Secondary Electron ◽

Low Voltage ◽

Fabrication Process ◽

Critical Dimensions ◽

Linewidth Measurement ◽

Threshold Technique ◽

Scanning Electron

Minimum feature sizes in experimental integrated circuits are approaching 0.5 μm and below. During the fabrication process it is usually necessary to be able to non-destructively measure the critical dimensions in resist and after the various process steps. This can be accomplished using the low voltage SEM. Submicron linewidth measurement is typically done by manually measuring the SEM micrographs. Since it is desirable to make as many measurements as possible in the shortest period of time, it is important that this technique be automated.Linewidth measurement using the scanning electron microscope is not well understood. The basic intent is to measure the size of a structure from the secondary electron signal generated by that structure. Thus, it is important to understand how the actual dimension of the line being measured relates to the secondary electron signal. Since different features generate different signals, the same method of relating linewidth to signal cannot be used. For example, the peak to peak method may be used to accurately measure the linewidth of an isolated resist line; but, a threshold technique may be required for an isolated space in resist.

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