scholarly journals Modification of grain boundary potential barriers by annealing treatments of PTCR ceramics with identical microstructure and room-temperature resistivity

2021 ◽  
Author(s):  
Jennifer M. Prohinig ◽  
Klaus Reichmann ◽  
Stephan Bigl
Keyword(s):  
Grain Boundary ◽  
Room Temperature ◽  
Room Temperature Resistivity ◽  
Potential Barriers ◽  
Boundary Potential ◽  
Temperature Resistivity

'The Role of the Grain Boundary on the Resistivity of Pb(Fe1/2Nb1/2)O3 at Room Temperature

2002 ◽  
Vol 718 ◽  
Author(s):  
Sang-Bop Lee ◽  
Kwang-Ho Lee ◽  
Hwan Kim
Keyword(s):  
Grain Boundary ◽  
Room Temperature ◽  
Sintered Specimen ◽  
Room Temperature Resistivity ◽  
Boundary Properties ◽  
Order Of Magnitude ◽  
The Difference ◽  
Fe Reduction ◽  
Temperature Resistivity

AbstractThe effect of changing sintering temperature on the grain boundary properties and the room temperature resistivity (ρRT) of Pb(Fe1/2Nb1/2)O3 (PFN) was investigated. Monitering the temperature dependence of resistivity showed that the ρRT's of 1050°C and 1150°C-sintered specimen were 1011ΩEcm and 104ΩEcm respectively, but the resistivity above 300°C became nearly identical. The previous model, that the low resistivity of PFN is due to the electron hopping between Fe2+ and Fe3+ driven by the reduction of PFN, couldn't explain this phenomenon, and the reconsideration of the Fe reduction revealed that the difference of electron concentration between the 1050°C and 1150°C-sintered specimen couldn't exceed one order of magnitude. The role of the grain boundary was introduced in order to account for this phenomenon.

Influence of Modulation Wavelength Induced Order on the Physical Properties of Nb/Rare Earth Superlattices

1984 ◽  
Vol 37 ◽  
Author(s):  
L. H. Greene ◽  
W. L. Feldmann ◽  
J. M. Rowell ◽  
B. Batlogg ◽  
R. Hull ◽  
...  
Keyword(s):  
Rare Earth ◽  
Room Temperature ◽  
Room Temperature Resistivity ◽  
Residual Resistance ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Residual Resistance Ratio ◽  
Temperature Resistivity ◽  
Modulation Wavelength

AbstractWe report the observation of a higher degree of preferred crystalline orientation in Nb/rare earth superlattices for modulation wavelengths in the range of 200 Å to 500 Å than that exhibited by single component films. All films and multilayers are sputter deposited onto room temperature sapphire substrates. Electronic transport measurements also show that the residual resistance ratio is higher and the room temperature resistivity is lower than for multilayers of either greater or lower periodicities. Transmission electron micrographs (TEM) showing excellent layering, grain size comparable to the layer thickness, and evidence of some degree of epitaxy are presented.

scholarly journals Computational Intelligence Approach for Estimating Superconducting Transition Temperature of Disordered MgB2Superconductors Using Room Temperature Resistivity

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Taoreed O. Owolabi ◽  
Kabiru O. Akande ◽  
Sunday O. Olatunji
Keyword(s):  
Transition Temperature ◽  
Superconducting Transition Temperature ◽  
Room Temperature ◽  
Optimization Technique ◽  
Support Vector ◽  
Measuring Instruments ◽  
Room Temperature Resistivity ◽  
Superconducting Transition ◽  
Experimental Values ◽  
Temperature Resistivity

Doping and fabrication conditions bring about disorder in MgB2superconductor and further influence its room temperature resistivity as well as its superconducting transition temperature (TC). Existence of a model that directly estimatesTCof any doped MgB2superconductor from the room temperature resistivity would have immense significance since room temperature resistivity is easily measured using conventional resistivity measuring instrument and the experimental measurement ofTCwastes valuable resources and is confined to low temperature regime. This work develops a model, superconducting transition temperature estimator (STTE), that directly estimatesTCof disordered MgB2superconductors using room temperature resistivity as input to the model. STTE was developed through training and testing support vector regression (SVR) with ten experimental values of room temperature resistivity and their correspondingTCusing the best performance parameters obtained through test-set cross validation optimization technique. The developed STTE was used to estimateTCof different disordered MgB2superconductors and the obtained results show excellent agreement with the reported experimental data. STTE can therefore be incorporated into resistivity measuring instruments for quick and direct estimation ofTCof disordered MgB2superconductors with high degree of accuracy.

scholarly journals Nanoscale Tuning of Grain Boundary Potential Barriers in Doped Strontium Titanate

2003 ◽  
Vol 9 (S02) ◽  
pp. 672-673
Author(s):  
Pradyumna L. Prabhumirashi ◽  
Andrew R. Lupini ◽  
Stephen J. Pennycook ◽  
Vinayak P. Dravid
Keyword(s):  
Grain Boundary ◽  
Strontium Titanate ◽  
Potential Barriers ◽  
Boundary Potential

Models for Electronic Conduction Across Ceramic Grain Boundaries

1985 ◽  
Vol 60 ◽  
Author(s):  
L. C. Burton
Keyword(s):  
Grain Boundary ◽  
Space Charge ◽  
Boundary Behavior ◽  
High Resistivity ◽  
Potential Barriers ◽  
Ohmic Behavior ◽  
Boundary Potential ◽  
Electronic Current ◽  
Grain Width ◽  
Limited Diffusion

AbstractElectronic current flow over grain boundary potential barriers for low resistance grains is first reviewed. It is then shown that if the resistance of the grains increases and/or grain size is reduced, the grains may be totally depleted of mobile charge. The grain boundary barrier is thus reduced to (D/2W)2 of its original large grain value, D being grain width and W the full space charge width. For high resistivity grains satisfying the relation D ≪ 2W, the conduction band becomes essentially flat. Phenomena formerly caused by grain boundary potential barriers (varistor and PTC effects seen in semiconducting ceramic) will be greatly reduced, or eliminated.Commercial COG and X7R MLC capacitors exhibit a transition from super-ohmic to ohmic behavior at high voltages, paralleling the behavior of the varistor. Two possible mechanisms that could account for this are varistor-like grain boundary behavior, or space charge limited diffusion current.

Preparation of Ni/BaTiO3 Composites and PTC Effect

2007 ◽  
Vol 280-283 ◽  
pp. 341-344
Author(s):  
Xiao Lei Li ◽  
Yuan Fang Qu ◽  
Wei Bing Ma ◽  
Zhan Shen Zheng
Keyword(s):  
Heat Treatment ◽  
Room Temperature ◽  
Room Temperature Resistivity ◽  
Ptc Effect ◽  
Reducing Atmosphere ◽  
Prepared Composite ◽  
Temperature Resistivity ◽  
Ntc Effect

Ni/BaTiO3 composite was prepared by decomposition of NiC2O4·2H2O/BaTiO3 precursor, which was prepared by precipitating of nickel in the form of oxalate into the BaTiO3 slurry. The composite must be sintered in reducing atmosphere. Otherwise NTC effect would be introduced. The prepared composite almost had no PTC effect. But PTC effect of the Ni/BaTiO3 composite can be effectively renewed by heat-treatment in air. Under a proper composition and method, the composite shows low room-temperature resistivity (ρRT=6.0 Ω·cm) and obvious PTC effect (ρmax/ρmin=102).

The Influence of Sintering Atmosphere and Reoxidation Temperature on the Electrical Properties of the Chip-Type Ba1-xSmxTiO3 Based Ceramics

2014 ◽  
Vol 900 ◽  
pp. 134-137
Author(s):  
Xu Xin Cheng ◽  
Dong Xiang Zhou ◽  
Qi Jun Xiao ◽  
Zhao Xiong Zhao
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Room Temperature Resistivity ◽  
Sintering Atmosphere ◽  
Reducing Atmosphere ◽  
Chip Type ◽  
Ptcr Effect ◽  
Temperature Resistivity

The PTCR characteristics of (Ba1-xSmx)TiO3(BSMT) with different donor-doped concentration (x) sintered in a reducing atmosphere and reoxidized in air are investigated. The results reveal that the room temperature resistivity (ρRT) of the semiconducting BSMT ceramics first decreases and then increases with increasing of thexvalues, especially whenxis 0.004, the semiconducting BSMT ceramics reoxidized at 850oC for 1 h after sintering at 1300 °C for 30 min in a reducing atmosphere achieve a lower room temperature resisitivity of 82.6 Ωcm. in addition, the doped 0.1 mol% Sm3+BSMT samples fired at 1300 °C for 30 min in air exhibit remarkable PTCR effect with a resistance jumping ratio of 3.4 orders magnitude; moreover, a lower ρRTof the BSMT specimens sintered in a reducing atmosphere is obtained.

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