Preparation of Ni/BaTiO3 Composites and PTC Effect

2007 ◽  
Vol 280-283 ◽  
pp. 341-344
Author(s):  
Xiao Lei Li ◽  
Yuan Fang Qu ◽  
Wei Bing Ma ◽  
Zhan Shen Zheng
Keyword(s):  
Heat Treatment ◽  
Room Temperature ◽  
Room Temperature Resistivity ◽  
Ptc Effect ◽  
Reducing Atmosphere ◽  
Prepared Composite ◽  
Temperature Resistivity ◽  
Ntc Effect

Ni/BaTiO3 composite was prepared by decomposition of NiC2O4·2H2O/BaTiO3 precursor, which was prepared by precipitating of nickel in the form of oxalate into the BaTiO3 slurry. The composite must be sintered in reducing atmosphere. Otherwise NTC effect would be introduced. The prepared composite almost had no PTC effect. But PTC effect of the Ni/BaTiO3 composite can be effectively renewed by heat-treatment in air. Under a proper composition and method, the composite shows low room-temperature resistivity (ρRT=6.0 Ω·cm) and obvious PTC effect (ρmax/ρmin=102).

The Influence of Donor-Doped Content on PTC Effect of Ba-Excess BaTiO3 Based Ceramics Fired in Reducing Atmosphere

2014 ◽  
Vol 1015 ◽  
pp. 425-429
Author(s):  
Xu Xin Cheng ◽  
Hai Ning Cui ◽  
Dong Xiang Zhou ◽  
Qiu Yun Fu
Keyword(s):  
Grain Size ◽  
Electrical Properties ◽  
Room Temperature ◽  
Room Temperature Resistivity ◽  
Ptc Effect ◽  
Reducing Atmosphere ◽  
Donor Dopant ◽  
Temperature Resistivity

We investigated the influence of the Sm-doped contentration on the electrical properties and PTC effect of Ba-excess BaTiO3Based Ceramics, which were fired at 1300 °C for 30 min in a reducing atmosphere and then reoxidized at 850 °C for 1 h. The results showed that the donor dopant affected PTC characteristics and the electrical properties of the BSMT ceramics, whose room temperature resistivity first decreased and then increased with an increase in the Sm3+-doped content across the range from 0.1 to 0.5 mol%. The BSMT specimens exhibited a remarkable PTC effect, with a resistance jump greater by 2.7 orders of magnitude, along with a low room temperature resistivity of 128.6 Ω∙cm at the donor-doped content of 0.3 mol%. The influence of the donor dopant on the grain size of the as-fired samples has been also investigated.

The Influence of Sintering Atmosphere and Reoxidation Temperature on the Electrical Properties of the Chip-Type Ba1-xSmxTiO3 Based Ceramics

2014 ◽  
Vol 900 ◽  
pp. 134-137
Author(s):  
Xu Xin Cheng ◽  
Dong Xiang Zhou ◽  
Qi Jun Xiao ◽  
Zhao Xiong Zhao
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Room Temperature Resistivity ◽  
Sintering Atmosphere ◽  
Reducing Atmosphere ◽  
Chip Type ◽  
Ptcr Effect ◽  
Temperature Resistivity

The PTCR characteristics of (Ba1-xSmx)TiO3(BSMT) with different donor-doped concentration (x) sintered in a reducing atmosphere and reoxidized in air are investigated. The results reveal that the room temperature resistivity (ρRT) of the semiconducting BSMT ceramics first decreases and then increases with increasing of thexvalues, especially whenxis 0.004, the semiconducting BSMT ceramics reoxidized at 850oC for 1 h after sintering at 1300 °C for 30 min in a reducing atmosphere achieve a lower room temperature resisitivity of 82.6 Ωcm. in addition, the doped 0.1 mol% Sm3+BSMT samples fired at 1300 °C for 30 min in air exhibit remarkable PTCR effect with a resistance jumping ratio of 3.4 orders magnitude; moreover, a lower ρRTof the BSMT specimens sintered in a reducing atmosphere is obtained.

The Influence of Donor-Doped Content on PTCR Effect of (Ba1-xSmx)TiO3 Based Ceramics Prepared by the Reduction Sintering-Reoxidation Method

2014 ◽  
Vol 1015 ◽  
pp. 517-520
Author(s):  
Xu Xin Cheng ◽  
Zhao Xiong Zhao ◽  
Dong Xiang Zhou ◽  
Qiu Yun Fu
Keyword(s):  
Room Temperature ◽  
Positive Temperature Coefficient ◽  
Room Temperature Resistivity ◽  
Positive Temperature ◽  
Dopant Content ◽  
Reducing Atmosphere ◽  
Donor Dopant ◽  
Ptcr Effect ◽  
Temperature Coefficient Of Resistivity ◽  
Temperature Resistivity

We investigated the effect of the donor-doped content on the positive temperature coefficient of resistivity (PTCR) of (Ba1-xSmx)TiO3(BST) Based Ceramics that were sintered at 1300 °C for 30 min in a reducing atmosphere and re-oxidized at 850 °C for 1 h. The results indicated that the resistance jump first increased and then decreased with an increase of the donor-doped concentration. Moreover, the specimens achieved a low room temperature resistivity of 383.1 Ω·cm at a donor-doped content and exhibited a pronounced PTCR characteristics with a resistance jump of 3.1 orders of magnitude. Furthermore, the RT reisistivity of the samples reduced and increased with the increasing of the donor-dopant content in the range of 0.1−0.5 mol% Sm3+. In addition, the effect of the Sm3+-doped concentration on the grain size of the ceramics was investigated in our paper.

scholarly journals Влияние термообработки на электрические характеристики полуизолирующих слоев, полученных с помощью облучения n-SiC высокоэнергетическими ионами аргона

2018 ◽  
Vol 44 (6) ◽  
pp. 11 ◽  
Author(s):  
П.А. Иванов ◽  
А.С. Потапов ◽  
М.Ф. Кудояров ◽  
М.А. Козловский ◽  
Т.П. Самсонова
Keyword(s):  
Heat Treatment ◽  
Silicon Carbide ◽  
Room Temperature ◽  
High Energy ◽  
Room Temperature Resistivity ◽  
Electrical Characteristics ◽  
Near Surface ◽  
Heat Treated ◽  
Argon Ions ◽  
Temperature Resistivity

AbstractIrradiation of crystalline n -type silicon carbide ( n -SiC) with high-energy (53-MeV) argon ions was used to create near-surface semi-insulating ( i -SiC) layers. The influence of subsequent heat treatment on the electrical characteristics of i -SiC layers has been studied. The most high-ohmic ion-irradiated i -SiC layers with room-temperature resistivity of no less than 1.6 × 10^13 Ω cm were obtained upon the heat treatment at 600°C, whereas the resistivity of such layers heat-treated at 230°C was about 5 × 10^7 Ω cm.

Complex Analysis of Electrical Resistivity Dynamics of Co82Fe4Cr3Si8B3 Amorphous Alloy under Heat Treatment

2013 ◽  
Vol 811 ◽  
pp. 72-76 ◽  
Author(s):  
Aleksandr Kotvitckii ◽  
Galina Kraynova ◽  
Anatoly Frolov ◽  
Vitaly Ivanov
Keyword(s):  
Heat Treatment ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Amorphous Alloy ◽  
Room Temperature ◽  
Complex Analysis ◽  
Room Temperature Resistivity ◽  
Resistivity Minimum ◽  
Temperature Resistivity ◽  
Amorphous Character

In this paper the detailed analysis of thermal behavior of electrical resistivity of Co82Fe4Cr3Si8B3 amorphous alloy is made. It has been shown that within temperature range 230С <T< 5600С the structure of the alloy keeps its amorphous character and only a slight changes occurred. A high temperature (above room temperature) resistivity minimum was found at 160°C. This feature was related with Curie temperature of the alloy. It has been shown that change of electrical resistivity behavior at 350°C can be explained by reaching the Debye temperature of the alloy.

Effects of Glass-Additives on the Properties of Ni/Ceramic PTC Composites

2007 ◽  
Vol 280-283 ◽  
pp. 337-340
Author(s):  
Yuan Fang Qu ◽  
Hua Tao Wang ◽  
Xiao Lei Li ◽  
Wei Bing Ma
Keyword(s):  
Contact Resistance ◽  
Room Temperature ◽  
Sintering Temperature ◽  
Ceramic Composites ◽  
Room Temperature Resistivity ◽  
Sintering Aids ◽  
Ptc Effect ◽  
Suitable Amount ◽  
Interface Contact ◽  
Temperature Resistivity

The effects of glass additives on the sintering and properties of Ni/(Ba0.92Sr0.08)TiO3 composites were investigated. Due to the addition of glass additives, Ni/ceramic composites with low room-temperature resistivity and obvious PTC effect were obtained at a low sintering temperature. It was shown that glass-additives could form liquid phase that aided the solution and diffusion of solid atoms, acting as sintering aids to accelerate the sintering and lower the sintering temperature. The room-temperature resistivity decreased first and increased later with the increasing content of glassadditives, which was explained by two functions of glass-additives, decreasing interface contact resistance as sintering aids and adding volume resistance as insulators. Moreover, a suitable amount of glass-additives could enhance the PTC effect unexpectedly, which was attributed to the decrease of the contact resistance existing at the ceramic/ceramic interface.

The Influence of Donor-Doped Concentration on the PTCR Characteristics of the Ban-xSmxTiO3 Based Ceramics Sintered in Reducing Atmosphere

2014 ◽  
Vol 881-883 ◽  
pp. 1031-1034
Author(s):  
Xu Xin Cheng ◽  
Dong Xiang Zhou ◽  
Zhao Xiong Zhao ◽  
Qiu Yun Fu
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Sintering Temperature ◽  
Positive Temperature Coefficient ◽  
Room Temperature Resistivity ◽  
Positive Temperature ◽  
Reducing Atmosphere ◽  
Ptcr Effect ◽  
Temperature Coefficient Of Resistivity ◽  
Temperature Resistivity

Positive temperature coefficient of resistivity (PTCR) effect and electrical properties of (Ban-xSmx)TiO3(BSMT ) samples with different Ba-site/Ti-site ratio (n) and various concentration of the donor-doped Sm3+(x) sintered in a reducing atmosphere and reoxidized in air are investigated. The results show that the room temperature resistivity (ρRT) of the semiconducting BSMT ceramics first decreases and then increases with increasing of concentration of the donor-doped Sm3+, especially whenxis 0.005 mol, the ρRTof the BSMT ceramics is the lowest. Moreover, the ρRTof the Ba-excess BSMT (n= 1.01) specimens reoxidized at 800 oC for 1 h after sintering at 1270 °C for 30 min in a reducing atmosphere is lower than the Ti-excess ones (n= 0.99), in addition, the ρRTof the BSMT specimens increases with an increase of both sintering temperature and reoxidized time.

Influence of Modulation Wavelength Induced Order on the Physical Properties of Nb/Rare Earth Superlattices

1984 ◽  
Vol 37 ◽  
Author(s):  
L. H. Greene ◽  
W. L. Feldmann ◽  
J. M. Rowell ◽  
B. Batlogg ◽  
R. Hull ◽  
...  
Keyword(s):  
Rare Earth ◽  
Room Temperature ◽  
Room Temperature Resistivity ◽  
Residual Resistance ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Residual Resistance Ratio ◽  
Temperature Resistivity ◽  
Modulation Wavelength

AbstractWe report the observation of a higher degree of preferred crystalline orientation in Nb/rare earth superlattices for modulation wavelengths in the range of 200 Å to 500 Å than that exhibited by single component films. All films and multilayers are sputter deposited onto room temperature sapphire substrates. Electronic transport measurements also show that the residual resistance ratio is higher and the room temperature resistivity is lower than for multilayers of either greater or lower periodicities. Transmission electron micrographs (TEM) showing excellent layering, grain size comparable to the layer thickness, and evidence of some degree of epitaxy are presented.

scholarly journals Computational Intelligence Approach for Estimating Superconducting Transition Temperature of Disordered MgB2Superconductors Using Room Temperature Resistivity

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Taoreed O. Owolabi ◽  
Kabiru O. Akande ◽  
Sunday O. Olatunji
Keyword(s):  
Transition Temperature ◽  
Superconducting Transition Temperature ◽  
Room Temperature ◽  
Optimization Technique ◽  
Support Vector ◽  
Measuring Instruments ◽  
Room Temperature Resistivity ◽  
Superconducting Transition ◽  
Experimental Values ◽  
Temperature Resistivity

Doping and fabrication conditions bring about disorder in MgB2superconductor and further influence its room temperature resistivity as well as its superconducting transition temperature (TC). Existence of a model that directly estimatesTCof any doped MgB2superconductor from the room temperature resistivity would have immense significance since room temperature resistivity is easily measured using conventional resistivity measuring instrument and the experimental measurement ofTCwastes valuable resources and is confined to low temperature regime. This work develops a model, superconducting transition temperature estimator (STTE), that directly estimatesTCof disordered MgB2superconductors using room temperature resistivity as input to the model. STTE was developed through training and testing support vector regression (SVR) with ten experimental values of room temperature resistivity and their correspondingTCusing the best performance parameters obtained through test-set cross validation optimization technique. The developed STTE was used to estimateTCof different disordered MgB2superconductors and the obtained results show excellent agreement with the reported experimental data. STTE can therefore be incorporated into resistivity measuring instruments for quick and direct estimation ofTCof disordered MgB2superconductors with high degree of accuracy.

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