Room‐Temperature Resistivity of Mo‐Nb and Mo‐Re Alloys Containing One Percent Iron

AbstractWe report the observation of a higher degree of preferred crystalline orientation in Nb/rare earth superlattices for modulation wavelengths in the range of 200 Å to 500 Å than that exhibited by single component films. All films and multilayers are sputter deposited onto room temperature sapphire substrates. Electronic transport measurements also show that the residual resistance ratio is higher and the room temperature resistivity is lower than for multilayers of either greater or lower periodicities. Transmission electron micrographs (TEM) showing excellent layering, grain size comparable to the layer thickness, and evidence of some degree of epitaxy are presented.

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Computational Intelligence Approach for Estimating Superconducting Transition Temperature of Disordered MgB2Superconductors Using Room Temperature Resistivity

Applied Computational Intelligence and Soft Computing ◽

10.1155/2016/1709827 ◽

2016 ◽

Vol 2016 ◽

pp. 1-7 ◽

Cited By ~ 1

Author(s):

Taoreed O. Owolabi ◽

Kabiru O. Akande ◽

Sunday O. Olatunji

Keyword(s):

Transition Temperature ◽

Superconducting Transition Temperature ◽

Room Temperature ◽

Optimization Technique ◽

Support Vector ◽

Measuring Instruments ◽

Room Temperature Resistivity ◽

Superconducting Transition ◽

Experimental Values ◽

Temperature Resistivity

Doping and fabrication conditions bring about disorder in MgB2superconductor and further influence its room temperature resistivity as well as its superconducting transition temperature (TC). Existence of a model that directly estimatesTCof any doped MgB2superconductor from the room temperature resistivity would have immense significance since room temperature resistivity is easily measured using conventional resistivity measuring instrument and the experimental measurement ofTCwastes valuable resources and is confined to low temperature regime. This work develops a model, superconducting transition temperature estimator (STTE), that directly estimatesTCof disordered MgB2superconductors using room temperature resistivity as input to the model. STTE was developed through training and testing support vector regression (SVR) with ten experimental values of room temperature resistivity and their correspondingTCusing the best performance parameters obtained through test-set cross validation optimization technique. The developed STTE was used to estimateTCof different disordered MgB2superconductors and the obtained results show excellent agreement with the reported experimental data. STTE can therefore be incorporated into resistivity measuring instruments for quick and direct estimation ofTCof disordered MgB2superconductors with high degree of accuracy.

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Preparation of Ni/BaTiO3 Composites and PTC Effect

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.280-283.341 ◽

2007 ◽

Vol 280-283 ◽

pp. 341-344

Author(s):

Xiao Lei Li ◽

Yuan Fang Qu ◽

Wei Bing Ma ◽

Zhan Shen Zheng

Keyword(s):

Heat Treatment ◽

Room Temperature ◽

Room Temperature Resistivity ◽

Ptc Effect ◽

Reducing Atmosphere ◽

Prepared Composite ◽

Temperature Resistivity ◽

Ntc Effect

Ni/BaTiO3 composite was prepared by decomposition of NiC2O4·2H2O/BaTiO3 precursor, which was prepared by precipitating of nickel in the form of oxalate into the BaTiO3 slurry. The composite must be sintered in reducing atmosphere. Otherwise NTC effect would be introduced. The prepared composite almost had no PTC effect. But PTC effect of the Ni/BaTiO3 composite can be effectively renewed by heat-treatment in air. Under a proper composition and method, the composite shows low room-temperature resistivity (ρRT=6.0 Ω·cm) and obvious PTC effect (ρmax/ρmin=102).

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The Influence of Sintering Atmosphere and Reoxidation Temperature on the Electrical Properties of the Chip-Type Ba1-xSmxTiO3 Based Ceramics

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.900.134 ◽

2014 ◽

Vol 900 ◽

pp. 134-137

Author(s):

Xu Xin Cheng ◽

Dong Xiang Zhou ◽

Qi Jun Xiao ◽

Zhao Xiong Zhao

Keyword(s):

Electrical Properties ◽

Room Temperature ◽

Room Temperature Resistivity ◽

Sintering Atmosphere ◽

Reducing Atmosphere ◽

Chip Type ◽

Ptcr Effect ◽

Temperature Resistivity

The PTCR characteristics of (Ba1-xSmx)TiO3(BSMT) with different donor-doped concentration (x) sintered in a reducing atmosphere and reoxidized in air are investigated. The results reveal that the room temperature resistivity (ρRT) of the semiconducting BSMT ceramics first decreases and then increases with increasing of thexvalues, especially whenxis 0.004, the semiconducting BSMT ceramics reoxidized at 850oC for 1 h after sintering at 1300 °C for 30 min in a reducing atmosphere achieve a lower room temperature resisitivity of 82.6 Ωcm. in addition, the doped 0.1 mol% Sm3+BSMT samples fired at 1300 °C for 30 min in air exhibit remarkable PTCR effect with a resistance jumping ratio of 3.4 orders magnitude; moreover, a lower ρRTof the BSMT specimens sintered in a reducing atmosphere is obtained.

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Transport Studies in Single-Crystal Films of Cosi2 and Nisi2

MRS Proceedings ◽

10.1557/proc-25-575 ◽

1983 ◽

Vol 25 ◽

Cited By ~ 4

Author(s):

J. C. Hensel ◽

R. T. Tung ◽

J. M. Poate ◽

F. C. Unterwald ◽

D. C. Jacobson

Keyword(s):

Thin Films ◽

Single Crystal ◽

Temperature Dependence ◽

Room Temperature ◽

Room Temperature Resistivity ◽

Transport Studies ◽

Single Crystal Films ◽

Crystal Films ◽

The Difference ◽

Temperature Resistivity

ABSTRACTTransport studies have been performed on thin films of CoSi 2 and NiSis2 in the temperature range 1 to 300 K. The conductivities are metallic with essentially the same temperature dependence; however, the residual resistivities are markedly different even though the two silicides are structurally similar (the room temperature resistivity of NiSi2 being at least twice that of CoSi2 of 15 μΩ cm). The difference is attributed to intrinsic defects in NiSi2. This defect has been simulated by ion bombardment of the film where it is also shown that Matthiesen's rule is obeyed over a remarkable range of bombardment doses.

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Enhanced thermoelectric properties in PbTe Nanocomposites

MRS Proceedings ◽

10.1557/proc-1166-n03-27 ◽

2009 ◽

Vol 1166 ◽

Author(s):

Hillary Kirby ◽

Joshua Martin ◽

Anuja Datta ◽

Lidong Chen ◽

George S. Nolas

Keyword(s):

Thermoelectric Properties ◽

Room Temperature ◽

Room Temperature Resistivity ◽

Phase Reaction ◽

Conductivity Measurements ◽

Temperature Dependent ◽

Plasma Sintering ◽

Spark Plasma ◽

Temperature Dependent Thermal Conductivity ◽

Temperature Resistivity

AbstractDimensional nanocomposites of PbTe with varying carrier concentrations were prepared from undoped and Ag doped PbTe nanocrystals synthesized utilizing an alkaline aqueous solution-phase reaction. The nanocrystals were densified by Spark Plasma Sintering (SPS) for room temperature resistivity, Hall, Seebeck coefficient, and temperature dependent thermal conductivity measurements. The nanocomposites show an enhancement in the thermoelectric properties compared to bulk PbTe with similar carrier concentrations, thus demonstrating a promising approach for enhanced thermoelectric performance.

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The Influence of Donor-Doped Content on PTCR Effect of (Ba1-xSmx)TiO3 Based Ceramics Prepared by the Reduction Sintering-Reoxidation Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1015.517 ◽

2014 ◽

Vol 1015 ◽

pp. 517-520

Author(s):

Xu Xin Cheng ◽

Zhao Xiong Zhao ◽

Dong Xiang Zhou ◽

Qiu Yun Fu

Keyword(s):

Room Temperature ◽

Positive Temperature Coefficient ◽

Room Temperature Resistivity ◽

Positive Temperature ◽

Dopant Content ◽

Reducing Atmosphere ◽

Donor Dopant ◽

Ptcr Effect ◽

Temperature Coefficient Of Resistivity ◽

Temperature Resistivity

We investigated the effect of the donor-doped content on the positive temperature coefficient of resistivity (PTCR) of (Ba1-xSmx)TiO3(BST) Based Ceramics that were sintered at 1300 °C for 30 min in a reducing atmosphere and re-oxidized at 850 °C for 1 h. The results indicated that the resistance jump first increased and then decreased with an increase of the donor-doped concentration. Moreover, the specimens achieved a low room temperature resistivity of 383.1 Ω·cm at a donor-doped content and exhibited a pronounced PTCR characteristics with a resistance jump of 3.1 orders of magnitude. Furthermore, the RT reisistivity of the samples reduced and increased with the increasing of the donor-dopant content in the range of 0.1−0.5 mol% Sm3+. In addition, the effect of the Sm3+-doped concentration on the grain size of the ceramics was investigated in our paper.

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