The effects of indium aggregation in InGaN/GaN single and multiple quantum wells grown on nitrogen-polar GaN templates by a pulsed metalorganic chemical vapor deposition

2017 ◽  
Vol 182 ◽  
pp. 196-199 ◽  
Author(s):  
Yu-Siang You ◽  
Shih-Wei Feng ◽  
Hsiang-Chen Wang ◽  
Jie Song ◽  
Jung Han
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