The effects of indium aggregation in InGaN/GaN single and multiple quantum wells grown on nitrogen-polar GaN templates by a pulsed metalorganic chemical vapor deposition

2017 ◽  
Vol 182 ◽  
pp. 196-199 ◽  
Author(s):  
Yu-Siang You ◽  
Shih-Wei Feng ◽  
Hsiang-Chen Wang ◽  
Jie Song ◽  
Jung Han
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Metalorganic Chemical

Characterization of a-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition

2003 ◽  
Vol 42 (Part 2, No. 3A) ◽  
pp. L235-L238 ◽  
Author(s):  
Michael D. Craven ◽  
Patrick Waltereit ◽  
Feng Wu ◽  
James S. Speck ◽  
Steven P. DenBaars
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Metalorganic Chemical
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