Evaluation of a High-Density 3D Printed Material for Orthovoltage Cutout Shielding

2019 ◽  
Vol 50 (2) ◽  
pp. S5
Author(s):  
Kathy Song ◽  
Gabrielle Guitard ◽  
Jayna Mazurin ◽  
Hali Morrison ◽  
Adam Yarschenko ◽  
...  
Keyword(s):  
2017 ◽  
Vol 9 (13) ◽  
pp. 11837-11845 ◽  
Author(s):  
Yi-Ran Liang ◽  
Li-Na Zhu ◽  
Jie Gao ◽  
Hong-Xia Zhao ◽  
Ying Zhu ◽  
...  

Research ◽  
2022 ◽  
Vol 2022 ◽  
pp. 1-10
Author(s):  
Nerio Andrés Montoya ◽  
Valeria Criscuolo ◽  
Andrea Lo Presti ◽  
Raffaele Vecchione ◽  
Christian Falconi

Four-wire measurements have been introduced by Lord Kelvin in 1861 and have since become the standard technique for characterizing small resistances and impedances. However, high-density 4-wire measurements are generally complex, time-consuming, and inefficient because of constraints on interconnects, pads, external wires, and mechanical contacts, thus reducing reproducibility, statistical significance, and throughput. Here, we introduce, systematically design, analyze, and experimentally validate zero interconnect networks interfaced to external instrumentation by couples of twin wire. 3D-printed holders with magnets, interconnects, nonadhesive layers, and spacers can effortlessly establish excellent electrical connections with tunable or minimum contact forces and enable accurate measurements even for delicate devices, such as thin metals on soft polymers. As an example, we measured all the resistances of a twin-wire 29-resistor network made of silver-nanoparticle ink printed on polyimide, paper, or photo paper, including during sintering or temperature calibration, resulting in an unprecedentedly easy and accurate characterization of both resistivity and its temperature coefficient. The theoretical framework and experimental strategies reported here represent a breakthrough toward zero interconnect, simple, and efficient high-density 4-wire characterizations, can be generalized to other 4-wire measurements (impedances, sensors) and can open the way to more statistically meaningful and reproducible analyses of materials, high-throughput measurements, and minimally invasive characterizations of biomaterials.


Lab on a Chip ◽  
2018 ◽  
Vol 18 (4) ◽  
pp. 639-647 ◽  
Author(s):  
Hua Gong ◽  
Adam T. Woolley ◽  
Gregory P. Nordin
Keyword(s):  

We develop a new high-density, reversible, chip-to-chip interconnection method for hundreds of interconnects that is 3D printed as part of the connecting chips.


Author(s):  
Saikat Mondal ◽  
Mohd. Ifwat Mohd. Ghazali ◽  
Kanishka Wijewardena ◽  
Deepak Kumar ◽  
Premjeet Chahal

Author(s):  
Mohd Ifwat Mohd Ghazali ◽  
Jennifer A. Byford ◽  
Saranraj Karuppuswami ◽  
Amanpreet Kaur ◽  
James Lennon ◽  
...  
Keyword(s):  

2020 ◽  
Author(s):  
Ahmad Alsabbagh ◽  
Rabie Abu Saleem ◽  
Rashed Almasri ◽  
Sewar Aljarrah ◽  
Samia Awad

Lab on a Chip ◽  
2016 ◽  
Vol 16 (13) ◽  
pp. 2450-2458 ◽  
Author(s):  
Hua Gong ◽  
Adam T. Woolley ◽  
Gregory P. Nordin

We demonstrate that a custom resin with the right optical properties enables a digital light processor stereolithographic (DLP-SLA) 3D printer to fabricate microfluidic devices with densely integrated active elements in a 3D layout.


Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.


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