Write error rates of in-plane spin-transfer-torque random access memory calculated from rare-event enhanced micromagnetic simulations

2018 ◽  
Vol 467 ◽  
pp. 96-107 ◽  
Author(s):  
Tanmoy Pramanik ◽  
Urmimala Roy ◽  
Priyamvada Jadaun ◽  
Leonard F. Register ◽  
Sanjay K. Banerjee
Keyword(s):  
Rare Event ◽  
Random Access ◽  
Random Access Memory ◽  
Error Rates ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Access Memory ◽  
Micromagnetic Simulations

Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory

2016 ◽  
Vol 7 ◽  
pp. 1-4 ◽  
Author(s):  
Janusz J. Nowak ◽  
Ray P. Robertazzi ◽  
Jonathan Z. Sun ◽  
Guohan Hu ◽  
Jeong-Heon Park ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Error Rates ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Access Memory ◽  
Magnetic Random Access Memory

Progress and Prospects of Spin Transfer Torque Random Access Memory

2012 ◽  
Vol 48 (11) ◽  
pp. 3025-3030 ◽  
Author(s):  
E. Chen ◽  
D. Apalkov ◽  
A. Driskill-Smith ◽  
A. Khvalkovskiy ◽  
D. Lottis ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Access Memory

WRITE ERROR RATE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY

SPIN ◽  
2012 ◽  
Vol 02 (03) ◽  
pp. 1240001 ◽  
Author(s):  
ZIHUI WANG ◽  
YUCHEN ZHOU ◽  
JING ZHANG ◽  
YIMING HUAI
Keyword(s):  
Error Rate ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Random Access Memory ◽  
Underlying Mechanism ◽  
Theoretical Description ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Access Memory ◽  
Magnetic Random Access Memory

This paper reviews the recent progress made to realize reliable write operations in spin transfer torque magnetic random access memory. Theoretical description of write error rate (WER) based on macro-spin models are discussed with comparison to experimental data. Recent studies on the phenomena that can lead to abnormal WER behaviors which include back-hopping and low probability bifurcated switching are reviewed with emphasis on underlying mechanism. The studies on the WER in perpendicular magnetic tunnel junction (MTJ) are also reviewed. It is demonstrated that, for both in-plane and perpendicular MTJ, reliable and error-free write operations can be achieved with thorough understanding of the underlying physics and innovative design/process solutions.

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