Development of a half-metallic ferrimagnetic state in Lu2NiIrO6 via hole-doping

A novel half-metallic family of materials, the multiple Dirac cones half-metals, has received considerable interest from researchers. Benefiting from its novel electronic structure, they are promising candidates for ultra-performance spintronic devices. In this paper, we propose a new half-metallic material, perovskite-type [Formula: see text] HoMnO3, which possesses similar Dirac-like multiple linear band crosses. We investigated its electronic, magnetic and thermodynamic properties in detail on the basis of density functional theory. The excellent band structures are robust enough against spin-orbit coupling and electron and hole doping. Through calculations, we confirmed its multi-aspect stability. Based on the current study, we confirm that HoMnO3 has potential for next-generation spintronic applications.

Download Full-text

Hole-doping-induced half-metallic ferromagnetism in a highly-air-stable PdSe2 monolayer under uniaxial stress

Journal of Materials Chemistry C ◽

10.1039/c8tc01450g ◽

2018 ◽

Vol 6 (25) ◽

pp. 6792-6798 ◽

Cited By ~ 17

Author(s):

Shi-Hao Zhang ◽

Bang-Gui Liu

Keyword(s):

High Temperature ◽

Uniaxial Stress ◽

Ferromagnetic Materials ◽

Hole Doping ◽

Two Dimensional ◽

Half Metallic ◽

Metallic Ferromagnetism ◽

Half Metallic Ferromagnetism

Two-dimensional (2D) high-temperature ferromagnetic materials are important for spintronic applications.

Download Full-text

Half-metallic ferromagnetism in layered CdOHCl induced by hole doping

2D Materials ◽

10.1088/2053-1583/abe4ba ◽

2021 ◽

Vol 8 (2) ◽

pp. 025027

Author(s):

H Banerjee ◽

P Barone ◽

S Picozzi

Keyword(s):

Hole Doping ◽

Half Metallic ◽

Metallic Ferromagnetism ◽

Half Metallic Ferromagnetism

Download Full-text

Wide-range work-function tuning of active graphene transparent electrodes via hole doping

RSC Advances ◽

10.1039/c6ra04449b ◽

2016 ◽

Vol 6 (39) ◽

pp. 32746-32756 ◽

Cited By ~ 17

Author(s):

Jheng-Yuan Syu ◽

Yu-Min Chen ◽

Kai-Xiang Xu ◽

Shih-Ming He ◽

Wu-Ching Hung ◽

...

Keyword(s):

Work Function ◽

Hole Doping ◽

Transparent Electrodes ◽

Wide Range ◽

Work Function Tuning ◽

Via Hole ◽

Novel Strategy ◽

Transparent Conductive Electrodes

A novel strategy for preparing active transparent conductive electrodes by doping LBL-stacked graphene with AuCl3, successfully achieving an extremely wide range of work-function tunability of up to ~1.5 eV.

Download Full-text

Materials and Device Design with ZnO-Based Diluted Magnetic Semiconductors

MRS Proceedings ◽

10.1557/proc-666-f4.6 ◽

2001 ◽

Vol 666 ◽

Cited By ~ 18

Author(s):

Kazunori Sato ◽

Hiroshi Katayama-Yoshida

Keyword(s):

Diluted Magnetic Semiconductors ◽

Magnetic Semiconductors ◽

Spin Injection ◽

Wide Band ◽

Ferromagnetic State ◽

Hole Doping ◽

Half Metallic ◽

Practical Applications ◽

Doped Zno ◽

Diluted Magnetic

ABSTRACTWe propose a materials design to fabricate the transparent and half-metallic ferromagnets in V-, Cr-, Mn+hole, Fe-, Co-, and Ni-doped ZnO based upon ab initio electronic structure calculation. Mn-doped ZnO is anti-ferromagnetic spin glass state, however, it becomes half-metallic ferromagnets upon hole doping. The ferromagnetic state becomes more stable by electron doping in Fe-, Co- or Ni-doped ZnO. From the point of practical applications, it is feasible to realize the half-metallic ferromagnets with high Curie temperature, because n-type ZnO is easily available. We propose the design of new functional devices, such as spin-FET, photo-induced ferromagnets, and spin-injection devices using negative electron affinity in the wide band gap semiconductors.

Download Full-text