scholarly journals In-situ fiber drawing induced synthesis of silver-tellurium semiconductor compounds

2020 ◽  
Vol 543 ◽  
pp. 120159
Author(s):  
C. Strutynski ◽  
C. Labrugère ◽  
A. Poulon-Quintin ◽  
M. Dussauze ◽  
F. Adamietz ◽  
...  
Keyword(s):  
Fiber Drawing ◽  
Semiconductor Compounds

scholarly journals Scalable Fabrication of Highly Flexible Porous Polymer-Based Capacitive Humidity Sensor Using Convergence Fiber Drawing

Polymers ◽  
2019 ◽  
Vol 11 (12) ◽  
pp. 1985 ◽  
Author(s):  
Maryam Mesgarpour Tousi ◽  
Yujing Zhang ◽  
Shaowei Wan ◽  
Li Yu ◽  
Chong Hou ◽  
...  
Keyword(s):  
Relative Humidity ◽  
Humidity Sensor ◽  
Capillary Condensation ◽  
Porous Polymer ◽  
Good Sensitivity ◽  
Fiber Drawing ◽  
Small Temperature ◽  
Flexible Fiber ◽  
Capacitive Humidity Sensor

In this study, we fabricated a highly flexible fiber-based capacitive humidity sensor using a scalable convergence fiber drawing approach. The sensor’s sensing layer is made of porous polyetherimide (PEI) with its porosity produced in situ during fiber drawing, whereas its electrodes are made of copper wires. The porosity induces capillary condensation starting at a low relative humidity (RH) level (here, 70%), resulting in a significant increase in the response of the sensor at RH levels ranging from 70% to 80%. The proposed humidity sensor shows a good sensitivity of 0.39 pF/% RH in the range of 70%–80% RH, a maximum hysteresis of 9.08% RH at 70% RH, a small temperature dependence, and a good stability over a 48 h period. This work demonstrates the first fiber-based humidity sensor fabricated using convergence fiber drawing.

Direct Atomic-Level Observation and Chemical Analysis of ZnSe Synthesized by in Situ High-Throughput Reactive Fiber Drawing

Nano Letters ◽  
2013 ◽  
Vol 13 (3) ◽  
pp. 975-979 ◽  
Author(s):  
Chong Hou ◽  
Xiaoting Jia ◽  
Lei Wei ◽  
Alexander M. Stolyarov ◽  
Ofer Shapira ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
High Throughput ◽  
Atomic Level ◽  
Fiber Drawing

Detection Properties of CdZnTe Semiconductor for Diagnostic X-Ray Spectroscopic Applications

2005 ◽  
Vol 480-481 ◽  
pp. 53-58 ◽  
Author(s):  
M.B. Freitas ◽  
F.H.M. Medeiros ◽  
Elisabeth M. Yoshimura
Keyword(s):  
Detection System ◽  
Cryogenic Cooling ◽  
Good Resolution ◽  
X Rays ◽  
X Ray ◽  
Time Discrimination ◽  
Semiconductor Compounds ◽  
Different Sources

Currently, many semiconductor compounds, particularly Cd1-xZnxTe, have attracted attention for applications in detection of radiation, due to the very good resolution without cryogenic cooling (a 1.3 keV-FWHM at the 122 keV line from 57Co is reported for some detectors). In this study the properties of a zinc doped cadmium telluride detector mounted on a thermoelectric cooler (Amptek Inc., model XR-100T-CZT) were studied. The detection system is based on a Cd0.9Zn0.1Te crystal of 3x3x2 mm, which operates at approximately -21°C and uses a rise time discrimination (RTD) circuit to improve the energy resolution. Although the quantum efficiency of this compound is very high, the small dimensions of the crystal limit its use to low energy photons (some hundreds of keV). Because of the carrier trapping characteristics of CZT, the experimental determination of the response function is essential. In this work it was measured in the range of energies from 10 to 400 keV, employing gamma rays and fluorescence x-rays from different sources (57Co, 133Ba, 152Eu and 241Am). In spite of the experimental difficulties, the x-ray escape fraction was also evaluated, making it possible the correction of the distortion it causes in the measured spectra. Measurements of x-ray spectra produced by a tungsten tube operating at small currents were carried out, and the stripping procedure was performed, taking into account the two contributions (efficiency and escape fraction). Results obtained point to the feasibility of use of this detector for in-situ diagnostic x-ray spectroscopy, provided that low intensity beams are available.

Laser-Assisted Dry Etching Ablation for Microstructuring of III-V Semiconductors

1995 ◽  
Vol 397 ◽  
Author(s):  
J.J. Dubowski ◽  
M. Julier ◽  
G.I. Sproule ◽  
B. Mason
Keyword(s):  
Laser Fluence ◽  
Structural Damage ◽  
Etch Rate ◽  
Matrix Material ◽  
Atomic Layer ◽  
Dry Etching ◽  
Microscopy Study ◽  
Characteristic Energy ◽  
Semiconductor Compounds

ABSTRACTLaser-assisted dry etching ablation (LADEA) has been reviewed with an emphasis on its applicability for the microstructuring of III-V semiconductor compounds. The method is based on the application of an excimer laser ( λ= 308 nm) for pulsed heating of a wafer which is placed in a stream of Cl2/He gas. Both the products of chemical reaction and the depth to which a laser-induced reaction takes place depend on laser fluence. This makes possible the ablation of a well defined volume of the material. Little or no structural damage to the surface is observed because ablation is carried out with laser fluences below those required to melt the matrix material. The laser fluence dependence of the etch rate indicates that the process is primarily temperature driven with a characteristic energy for desorption. We have investigated LADEA as a method for in-situ processing of III-V semiconductors and the fabrication of nanostructures. An atomic force microscopy study has shown that atomically smooth surfaces can be obtained if the etch rate is near 1/2 atomic layer per laser pulse. The lateral resolution of LADEA has been found to be at least 20 nm. This, as well as the results of in-situ photoluminescence and Auger electron spectroscopy measurements, indicate that LADEA can be used for the direct (photoresist-free) fabrication of high quality microstructures and, ultimately, for the nanostructuring of III-V semiconductor compounds.

Rendez vous with Saturn's rings

1984 ◽  
Vol 75 ◽  
pp. 743-759 ◽  
Author(s):  
Kerry T. Nock
Keyword(s):  
Solar Energy ◽  
Electric Propulsion ◽  
Power Source ◽  
Propulsion System ◽  
Low Thrust ◽  
Ring Plane ◽  
The Earth ◽  
Total Impulse ◽  
Saturn's Rings

ABSTRACTA mission to rendezvous with the rings of Saturn is studied with regard to science rationale and instrumentation and engineering feasibility and design. Future detailedin situexploration of the rings of Saturn will require spacecraft systems with enormous propulsive capability. NASA is currently studying the critical technologies for just such a system, called Nuclear Electric Propulsion (NEP). Electric propulsion is the only technology which can effectively provide the required total impulse for this demanding mission. Furthermore, the power source must be nuclear because the solar energy reaching Saturn is only 1% of that at the Earth. An important aspect of this mission is the ability of the low thrust propulsion system to continuously boost the spacecraft above the ring plane as it spirals in toward Saturn, thus enabling scientific measurements of ring particles from only a few kilometers.

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