Layered and ion implantation specimens as possible reference materials for the electron-probe microanalysis

1992 ◽  
Vol 50 (2) ◽  
pp. 1652-1653
Author(s):  
G. Remond ◽  
R.H. Packwood ◽  
C. Gilles ◽  
S. Chryssoulis
Keyword(s):  
Ion Implantation ◽  
Reference Materials ◽  
Analytical Techniques ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray ◽  
Spatially Resolved ◽  
Analytical Expressions ◽  
Original Approach ◽  
Depth Concentration

Merits and limitations of layered and ion implanted specimens as possible reference materials to calibrate spatially resolved analytical techniques are discussed and illustrated for the case of gold analysis in minerals by means of x-ray spectrometry with the EPMA. To overcome the random heterogeneities of minerals, thin film deposition and ion implantation may offer an original approach to the manufacture of controlled concentration/ distribution reference materials for quantification of trace elements with the same matrix as the unknown.In order to evaluate the accuracy of data obtained by EPMA we have compared measured and calculated x-ray intensities for homogeneous and heterogeneous specimens. Au Lα and Au Mα x-ray intensities were recorded at various electron beam energies, and hence at various sampling depths, for gold coated and gold implanted specimens. X-ray intensity calculations are based on the use of analytical expressions for both the depth ionization Φ (ρz) and the depth concentration C (ρz) distributions respectively.

Duplex Hard Coatings with Aditional Ion Implantation

2012 ◽  
Vol 157-158 ◽  
pp. 1320-1323
Author(s):  
Branko Škorić ◽  
D. Kakaš ◽  
G. Favato ◽  
A. Miletić ◽  
M. Arsenovic
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Scratch Test ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Hard Coatings ◽  
X Ray ◽  
Atomic Force ◽  
Tin Thin Films

In this paper, we present the results of a study of TiN thin films which are deposited by a Physical Vapour Deposition (PVD) and Ion Beam Assisted Deposition (IBAD). In the present investigation the subsequent ion implantation was provided with N2+ ions. The ion implantation was applied to enhance the mechanical properties of surface. The thin film deposition process exerts a number of effects such as crystallographic orientation, morphology, topography, densification of the films.. A variety of analytic techniques were used for characterization, such as scratch test, calo test, Scanning electron microscopy (SEM), Atomic Force Microscope (AFM), X-ray diffraction (XRD) and Energy Dispersive X-ray analysis (EDAX).

Chemical Bath Deposition of Lead Sulphide (PbS) Thin Film and their Characterization

2013 ◽  
Vol 209 ◽  
pp. 111-115 ◽  
Author(s):  
Sandip V. Bhatt ◽  
M.P. Deshpande ◽  
Bindiya H. Soni ◽  
Nitya Garg ◽  
Sunil H. Chaki
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Raman Spectroscopy ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Excitation Wavelength ◽  
Face Centered Cubic ◽  
Phonon Modes ◽  
Lead Sulphide ◽  
X Ray

Thin film deposition of PbS is conveniently carried out by chemical reactions of lead acetate with thiourea at room temperature. Energy dispersive analysis of X-ray (EDAX), X-ray diffraction (XRD), selected area electron diffraction patterns (SAED), UV-Vis-NIR spectrophotometer, Scanning Electron Microscopy (SEM), Atomic force microscopy (AFM), Photoluminescence (PL) and Raman spectroscopy techniques are used for characterizing thin films. EDAX spectra shows that no impurity is present and XRD pattern indicates face centered cubic structure of PbS thin films. The average crystallite size obtained using XRD is about 15nm calculated using Scherrer’s formula and that determined from Hall-Williamson plot was found to be 18nm. SAED patterns indicate that the deposited PbS thin films are polycrystalline in nature. Blue shift due to quantum confinement was seen from the UV-Vis-NIR absorption spectra of thin film in comparison with bulk PbS. The Photoluminescence spectra obtained for thin film with different excitation sources shows sharp emission peaks at 395nm and its intensity of photoluminescence increases with increasing the excitation wavelength. Raman spectroscopy of deposited thin film was used to study the optical phonon modes at an excitation wavelength of 488nm using (Ar+) laser beam.

scholarly journals Multilayer Laue Lens: A Path Toward One Nanometer X-Ray Focusing

2010 ◽  
Vol 2010 ◽  
pp. 1-10 ◽  
Author(s):  
Hanfei Yan ◽  
Hyon Chol Kang ◽  
Ray Conley ◽  
Chian Liu ◽  
Albert T. Macrander ◽  
...  
Keyword(s):  
Theoretical Calculations ◽  
Numerical Aperture ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Diffraction Effect ◽  
X Rays ◽  
Dynamical Diffraction ◽  
Characterization Methods ◽  
X Ray ◽  
Laue Lens

The multilayer Laue lens (MLL) is a novel diffractive optic for hard X-ray nanofocusing, which is fabricated by thin film deposition techniques and takes advantage of the dynamical diffraction effect to achieve a high numerical aperture and efficiency. It overcomes two difficulties encountered in diffractive optics fabrication for focusing hard X-rays: (1) small outmost zone width and (2) high aspect ratio. Here, we will give a review on types, modeling approaches, properties, fabrication, and characterization methods of MLL optics. We show that a full-wave dynamical diffraction theory has been developed to describe the dynamical diffraction property of the MLL and has been employed to design the optimal shapes for nanofocusing. We also show a 16 nm line focus obtained by a partial MLL and several characterization methods. Experimental results show a good agreement with the theoretical calculations. With the continuing development of MLL optics, we believe that an MLL-based hard x-ray microscope with true nanometer resolution is on the horizon.

Thin Film Deposition and Transport in 2223 Bi‐Sr‐Ca‐Cu‐O

1989 ◽  
Vol 169 ◽  
Author(s):  
J.T. Kucera ◽  
D.G. Steel ◽  
D.W. Face ◽  
J.M. Graybeal ◽  
T.P. Orlando ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Annealing Conditions ◽  
Sensitive Function ◽  
Post Deposition

AbstractWe have reproducibly prepared thin films of Bi‐Sr‐Ca‐Cu‐O with Tc ≥ 105K. Depositions were done at ambient temperature with a subsequent post‐deposition anneal, and did not include lead substitution. X‐ray diffraction data indicates a majority fraction of the 2223 phase. These films possess very large grains of the order of 20‐30 u.m in size. Post‐deposition annealing conditions are a sensitive function of composition. Detailed transport measurements as a function of temperature and magnetic field have been obtained.

Electron and proton induced x-ray spectrometry: Two complementary spatially resolved analytical techniques in mineralogy

1995 ◽  
Vol 46 (6-7) ◽  
pp. 563-570 ◽  
Author(s):  
G. Remond ◽  
C. Gilles ◽  
D. Isabelle ◽  
C. Choi ◽  
M. Azahra ◽  
...  
Keyword(s):  
Analytical Techniques ◽  
X Ray ◽  
Spatially Resolved

Study of Carbon Thin Film Deposition on Various Buffer Layer as Characterized by X-Ray Diffraction and Raman Spectroscopy

2015 ◽  
Vol 1112 ◽  
pp. 106-109
Author(s):  
Angga Virdian ◽  
Heldi Alfiadi ◽  
Yudi Darma
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Buffer Layer ◽  
Raman Spectra ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Carbon Thin Film ◽  
Carbon Based

Westudy the structural characteristic of carbon based thin filmprepared by DC unbalanced magnetron sputtering technique on different buffer layer such as γ-Al2O3, SnO2, and Cu. Sputtering parameters of carbon thin film were maintained identical for each buffer layer. Fe-doped carbon pellet and Argon gas have been used as sputtering target and to generate the sputtering plasma, respectively. The roles of buffer layer for the quality of carbon-based thin film have been investigated by X-ray diffraction and Raman spectroscopy analysis. Raman spectra indicatethe formation of agoodquality carbon thin film with crystal-like structure on γ-Al2O3and Cu buffer layer, in contrast to the SnO2buffer layer case. Furthermore Raman spectra confirm thehoneycomb structure with fewer defects in γ-Al2O3indicating that it is more suitable buffer layer than the other. We argue that γ-Al2O3buffer layerprovide a good nucleation site and promote a better atomic arrangement for carbon atoms to form a few layergraphene-like structure. The atomic geometry of γ-Al2O3supports the hexagonal atomic configurationfor carbon atom inthe formation of a few layers graphene. This study mightgive a new approach for the carbon based deposition towards the devices application.

The Plasma Deposition of Semiconductor Multilater Structures

1989 ◽  
Vol 165 ◽  
Author(s):  
Masataka Hirose ◽  
Seiichi Miyazaki
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Plasma Deposition ◽  
Substrate Surface ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Atomic Scale ◽  
Layer By Layer ◽  
X Ray

AbstractThe early stages of thin film deposition from the rf glow discharge of SiH4 or SiH4 + NH3 have been studied by analysing the structure of silicon based multiiayers consisting of hydrogenated amorphous silicon (a-Si:H, 10 – 200 A thick) and stoichiometric silicon nitride (a-Si3N4:H, 25 – 250 A) alternating layers. The x-ray diffraction, its rocking curve and x-ray interference of the multilayers have shown that the amorphous silicon/silicon nitride interface is atomically abrupt and the surfaces of the respective layers are atomically flat regardless of substrate materials. This indicates that the precursors impinging onto a substrate from the gas phase homogeneously cover the growing surface and the layer by layer growth proceeds on atomic scale. In the plasma deposition of the covalently bonded semiconductors and insulators, the island formation on a substrate surface at the beginning of the thin film growth is very unlikely.

Process Development and Optimization of Carbon-Based Thin Film Deposition through Ablation of Graphite

2016 ◽  
Vol 701 ◽  
pp. 42-46
Author(s):  
Chun Wey Low Andrew ◽  
Vahid Damideh ◽  
Sor Heoh Saw ◽  
Chin Seong Lim
Keyword(s):  
Carbon Content ◽  
Carbon Nanomaterials ◽  
Carbon Deposition ◽  
Process Development ◽  
Dense Plasma ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Film Property ◽  
X Ray ◽  
Focus Shot

This paper reports the deposition of carbon nanomaterials on silicon substrate using a dense plasma focus device. The film property is studied using a field emission scanning electron microscopy (FESEM) and energy dispersive X-ray (EDX). The first test was deposited using 1, 3, 5, and 7 focus shots while the second test was carried out using 1 focus shot at 2, 3, 4, 5 and 7 Torr. Both tests were conducted with neon as filling gas at 7 Torr at distance of 8cm from the anode tip. In the first test, FESEM images exhibit a non-homogenous, non-uniformed and largely agglomerated carbon deposition at all films as pressure of filling gas increases. The EDX mapping confirms that carbon content in substrate increases from 10% to 30% as number of shot increases, and there is more carbon content detected in the centre position than the off-centre position. There is also a decrease in carbon content 35% to 25% as pressure of gas increases.

scholarly journals Deposition of Zinc Selenide by Atomic Layer Epitaxy for Multilayer X-Ray Optics

1989 ◽  
Vol 161 ◽  
Author(s):  
J.K. Shurtleff ◽  
D.D. Allred ◽  
R.T. Perkins ◽  
J.M. Thorne
Keyword(s):  
Chemical Vapor ◽  
Atomic Layer ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Atomic Layer Epitaxy ◽  
Ray Optics ◽  
X Ray ◽  
Vapor Deposition Technique ◽  
Number Of Cycles

ABSTRACTThin film deposition techniques currently being used to produce multilayer x-ray optics (MXOs) have difficulty producing smooth, uniform multilayers with d-spacings less than about twelve angstroms. We are investigating atomic layer epitaxy (ALE) as an alternative to these techniques.ALE is a chemical vapor deposition technique which deposits an atomic layer of material during each cycle of the deposition process. The thickness of a film deposited by ALE depends only on the number of cycles. Multilayers deposited by ALE should be smooth and uniform with precise d-spacings which makes ALE an excellent technique for producing multilayer x-ray optics.We have designed and built an ALE system and we have used this system to deposit ZnSe using diethyl zinc and hydrogen selenide.

Multi-layer thin-film deposition for high-performance X-ray field-emission characteristics

2021 ◽  
pp. 2140043
Author(s):  
Tae Hwan Jang ◽  
Tae Gyu Kim ◽  
Mun Ki Bae ◽  
Kyuseok Kim ◽  
Jaegu Choi
Keyword(s):  
Thin Film ◽  
Field Emission ◽  
High Performance ◽  
Low Voltage ◽  
High Vacuum ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray ◽  
Emission Effect ◽  
Layer Thin Film

In this study, we developed a nanoscale emitter having a multi-layer thin-film nanostructure in an effort to maximize the field-emission effect with a low voltage difference. The emitter was a sapphire board on which tungsten–DLC multi-player thin film was deposited using PVD and CVD processes. This multi-layer thin-film emitter was examined in a high-vacuum X-ray tube system. Its field-emission efficiency according to the applied voltage was then analyzed.

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