Discharge mechanism of the heat treated electrolytic manganese dioxide cathode in a primary Li/MnO2 battery: An in-situ and ex-situ synchrotron X-ray diffraction study

2014 ◽  
Vol 258 ◽  
pp. 155-163 ◽  
Author(s):  
Wesley M. Dose ◽  
Neeraj Sharma ◽  
Scott W. Donne
1995 ◽  
Vol 393 ◽  
Author(s):  
Y. Shao ◽  
S.A. Hackney ◽  
B.C. Cornilsen

ABSTRACTThe crystal structures of the undischarged, heat-treated electrolytic manganese dioxide (HEMD) and discharge products are characterized by high spatial resolution convergent beam electron diffraction (CBED). The results are compared with the x-ray diffraction (XRD) patterns characterized by broad, diffuse peaks. The CBED results for HEMD show that the starting cathodic material has the pyrolusite space group, but with a range of c/a ratios. The variability of the lattice parameter from grain to grain is found to coincide with the broadening on the low angle side of the XRD peaks. The CBED patterns of discharge products suggest a reduction range in c/a ratios and the formation of another phase.


2002 ◽  
Vol 56 (8) ◽  
pp. 1013-1020
Author(s):  
Robert J. Forrest ◽  
Robin Devonshire ◽  
Chakrapani V. Varanasi ◽  
Timothy R. Brumleve

Raman microscopy has been used to investigate the reactions between the chemical dosants in scandium metal halide discharge lamps and their silica lamp envelopes; such lamps are typically dosed with Hg, NaI, ScI3, and sometimes, additionally, excess Sc metal. Raman measurements were made both on operated lamps and dosed silica ampoules that had been furnace heat-treated. The ampoules mimic closely the dose–envelope interactions of lamps in a convenient manner while avoiding the obscuring and complicating effects in whole-lamp studies resulting from the reactions and mobility of electrode materials. In situ Raman analyses of deposits in the envelopes and ampoules, supported by an extensive database of the Raman spectra of lamp materials, and ex situ X-ray diffraction (XRD) analyses of refractory deposits to confirm independently the Raman assignments, have demonstrated that: (1) Sc metal reacts with envelope silica to produce Sc2O3 and elemental Si; (2) Sc metal in the presence of ScI3 reacts with the envelope silica to produce Sc2Si2O7; and (3) Sc metal reacts with envelope silica in the presence of NaI alone to produce Sc2O3 and not Sc2Si2O7. The results confirm and extend previous studies and demonstrate the value of Raman microscopy as a nondestructive investigative tool for lamp chemistry.


2013 ◽  
Vol 46 (5) ◽  
pp. 1283-1288 ◽  
Author(s):  
Wesley M. Dose ◽  
Scott W. Donne

High-temperaturein situX-ray diffraction is used to determine the thermal expansion behaviour of manganese dioxide in air at temperatures between 298 and 673 K, the range accessible prior to material decomposition. Two manganese dioxide samples of different origins are investigated to observe the effect of synthesis conditions and resultant material properties on the thermal response. β-MnO2prepared by a chemical pathway is found to expand linearly over the temperature window with thermal expansion coefficients (in units of K−1) of αa= 9.3 (4) × 10−6, αc= 7.0 (2) × 10−6and β = 25.6 (8) × 10−6. Conversely, the thermal expansion of heat-treated electrolytic manganese dioxide is disjointed about 473 K in theadirection and for the overall unit-cell volume, and about 523 K in thecdirection. Coefficients are therefore given (in units of K−1) as αa= 23 (4) × 10−6(298–473 K), 10 (3) × 10−6(473–673 K); αc= 0.2 (9) × 10−6(298–523 K), 10 (1) × 10−6(523–673 K); and β = 49 (9) × 10−6(298–473 K), 26 (5) × 10−6(473–673 K).


2010 ◽  
Vol 89-91 ◽  
pp. 503-508 ◽  
Author(s):  
J. Sheng ◽  
U. Welzel ◽  
Eric J. Mittemeijer

The stress evolution during diffusion annealing of Ni-Cu bilayers (individual layer thicknesses of 50 nm) was investigated employing ex-situ and in-situ X-ray diffraction measurements. Annealing at relatively low homologous temperatures (about 0.3 - 0.4 Tm) for durations up to about 100 hours results in considerable diffusional intermixing, as demonstrated by Auger-electron spectroscopy investigations (in combination with sputter-depth profiling). In addition to thermal stresses due to differences of the coefficients of thermal expansion of layers and substrate, tensile stress con-tributions in the sublayers arise during the diffusion anneals. The obtained stress data have been discussed in terms of possible mechanisms of stress generation. The influence of diffusion on stress development in the sublayers of the diffusion couple during heating and isothermal annealing was investigated by comparing stress changes in the bilayer system with corresponding results obtained under identical conditions for single layers of the components in the bilayer system. The specific residual stresses that emerge due to diffusion between the (sub)layers in the bilayer could thereby be identified.


Carbon ◽  
2015 ◽  
Vol 87 ◽  
pp. 246-256 ◽  
Author(s):  
Périne Landois ◽  
Mathieu Pinault ◽  
Stéphan Rouzière ◽  
Dominique Porterat ◽  
Cristian Mocuta ◽  
...  

2016 ◽  
Vol 4 (20) ◽  
pp. 7718-7726 ◽  
Author(s):  
Dorsasadat Safanama ◽  
Neeraj Sharma ◽  
Rayavarapu Prasada Rao ◽  
Helen E. A. Brand ◽  
Stefan Adams

In situ synchrotron X-ray diffraction study of the synthesis of solid-electrolyte Li1+xAlxGe2−x(PO4)3 (LAGP) from the precursor glass reveals that an initially crystallized dopant poor phase transforms into the Al-doped LAGP at 800 °C.


2021 ◽  
Vol 48 (10) ◽  
Author(s):  
Sergey V. Goryainov ◽  
John S. Tse ◽  
Serge Desgreniers ◽  
Saori I. Kawaguchi ◽  
Yuanming Pan ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document